Wide Bandgap Semiconductor Based Micro Nano Devices
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| Author | : Jung-Hun Seo |
| Publisher | : MDPI |
| Total Pages | : 138 |
| Release | : 2019-04-25 |
| Genre | : Technology & Engineering |
| ISBN | : 3038978426 |
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
| Author | : Fan Ren |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2020 |
| Genre | : Gallium arsenide semiconductors |
| ISBN | : 9780750325165 |
"Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.
| Author | : Jung-Hun Seo |
| Publisher | : |
| Total Pages | : 138 |
| Release | : 2019 |
| Genre | : Electrical engineering. Electronics. Nuclear engineering |
| ISBN | : 9783038978435 |
While group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.
| Author | : Anatoliy Evtukh |
| Publisher | : John Wiley & Sons |
| Total Pages | : 472 |
| Release | : 2016-03-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1119037964 |
Introducing up-to-date coverage of research in electron field emission from nanostructures, Vacuum Nanoelectronic Devices outlines the physics of quantum nanostructures, basic principles of electron field emission, and vacuum nanoelectronic devices operation, and offers as insight state-of-the-art and future researches and developments. This book also evaluates the results of research and development of novel quantum electron sources that will determine the future development of vacuum nanoelectronics. Further to this, the influence of quantum mechanical effects on high frequency vacuum nanoelectronic devices is also assessed. Key features: • In-depth description and analysis of the fundamentals of Quantum Electron effects in novel electron sources. • Comprehensive and up-to-date summary of the physics and technologies for THz sources for students of physical and engineering specialties and electronics engineers. • Unique coverage of quantum physical results for electron-field emission and novel electron sources with quantum effects, relevant for many applications such as electron microscopy, electron lithography, imaging and communication systems and signal processing. • New approaches for realization of electron sources with required and optimal parameters in electronic devices such as vacuum micro and nanoelectronics. This is an essential reference for researchers working in terahertz technology wanting to expand their knowledge of electron beam generation in vacuum and electron source quantum concepts. It is also valuable to advanced students in electronics engineering and physics who want to deepen their understanding of this topic. Ultimately, the progress of the quantum nanostructure theory and technology will promote the progress and development of electron sources as main part of vacuum macro-, micro- and nanoelectronics.
| Author | : Farid Medjdoub |
| Publisher | : MDPI |
| Total Pages | : 242 |
| Release | : 2021-05-26 |
| Genre | : Technology & Engineering |
| ISBN | : 3036505660 |
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 310 |
| Release | : 2004 |
| Genre | : Technology & Engineering |
| ISBN | : 9789812562364 |
The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
| Author | : Anna B Piotrowska |
| Publisher | : Mdpi AG |
| Total Pages | : 126 |
| Release | : 2021-12-20 |
| Genre | : Technology & Engineering |
| ISBN | : 9783036515229 |
Owing to their unique characteristics, direct wide bandgap energy, large breakdown field, and excellent electron transport properties, including operation at high temperature environments and low sensitivity to ionizing radiation, gallium nitride (GaN) and related group III-nitride heterostructures proved to be enabling materials for advanced optoelectronic and electronic devices and systems. Today, they are widely used in high performing short wavelength light emitting diodes (LEDs) and laser diodes (LDs), high performing radar, wireless telecommunications, as well 'green' power electronics. Impressive progress in GaN technology over the last 25 years has been driven by a continuously growing need for more advanced systems, and still new challenges arise and need to be solved. Actually, lighting industry, RF defene industry, and 5G mmWave telecommunication systems are driving forces for further intense research in order to reach full potential of GaN-based semiconductors. In the literature, there is a number of review papers and publications reporting technology progress and indicating future trends. In this Special Issue of Electronics, eight papers are published, the majority of them focusing materials and process technology of GaN-based devices fabricated on native GaN substrates. The specific topics include: GaN single crystalline substrates for electronic devices by ammonothermal and HVPE methods, Selective - Area Metalorganic Vapour - Phase Epitaxy of GaN and AlGaN/GaN hetereostructures for HEMTs, Advances in Ion Implantation of GaN and Related Materials including high pressure processing (lattice reconstruction) of ion implanted GaN (Mg and Be) and III-Nitride Nanowires for electronic and optoelectronic devices.
| Author | : Ahmed Sharif |
| Publisher | : John Wiley & Sons |
| Total Pages | : 398 |
| Release | : 2019-08-05 |
| Genre | : Technology & Engineering |
| ISBN | : 3527344195 |
Provides in-depth knowledge on novel materials that make electronics work under high-temperature and high-pressure conditions This book reviews the state of the art in research and development of lead-free interconnect materials for electronic packaging technology. It identifies the technical barriers to the development and manufacture of high-temperature interconnect materials to investigate into the complexities introduced by harsh conditions. It teaches the techniques adopted and the possible alternatives of interconnect materials to cope with the impacts of extreme temperatures for implementing at industrial scale. The book also examines the application of nanomaterials, current trends within the topic area, and the potential environmental impacts of material usage. Written by world-renowned experts from academia and industry, Harsh Environment Electronics: Interconnect Materials and Performance Assessment covers interconnect materials based on silver, gold, and zinc alloys as well as advanced approaches utilizing polymers and nanomaterials in the first section. The second part is devoted to the performance assessment of the different interconnect materials and their respective environmental impact. -Takes a scientific approach to analyzing and addressing the issues related to interconnect materials involved in high temperature electronics -Reviews all relevant materials used in interconnect technology as well as alternative approaches otherwise neglected in other literature -Highlights emergent research and theoretical concepts in the implementation of different materials in soldering and die-attach applications -Covers wide-bandgap semiconductor device technologies for high temperature and harsh environment applications, transient liquid phase bonding, glass frit based die attach solution for harsh environment, and more -A pivotal reference for professionals, engineers, students, and researchers Harsh Environment Electronics: Interconnect Materials and Performance Assessment is aimed at materials scientists, electrical engineers, and semiconductor physicists, and treats this specialized topic with breadth and depth.
| Author | : Gyu-Chul Yi |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 347 |
| Release | : 2012-01-13 |
| Genre | : Technology & Engineering |
| ISBN | : 3642224806 |
This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.
| Author | : Stephen Pearton |
| Publisher | : Elsevier |
| Total Pages | : 510 |
| Release | : 2018-10-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0128145226 |
Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
