Transient Radiation Effects On Microelectronics
Download Transient Radiation Effects On Microelectronics full books in PDF, epub, and Kindle. Read online free Transient Radiation Effects On Microelectronics ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
| Author | : Edward J. Steele |
| Publisher | : |
| Total Pages | : 237 |
| Release | : 1967 |
| Genre | : |
| ISBN | : |
The purpose was to determine microcircuit vulnerability in a transient radiation environment. Microcircuits constructed by different fabrication techniques were experimentally evaluated in an ionizing and bulk displacement radiation environment to study the basic failure mechanisms. Test specimens were of three basic circuit types; gates, flip-flops, and amplifiers. Fabrication techniques represented were monolithic p-n junction isolation, monolithic oxide-isolation, multiple chip, thin-film compatible, and thin-film hybrid. Circuit failure thresholds were determined as a function of fan-out, ambient temperature requirements, and electrical parameter degradation. Experimental study consisted of measuring transient responses in pulsed ionizing radiation environments, and determining bulk displacement effects from exposure to a reactor neutron/gamma environment. Failure mechanisms were analytically related to the characteristics of the circuit design and fabrication technique. (Author).
| Author | : William C. Bowman |
| Publisher | : |
| Total Pages | : 89 |
| Release | : 1965 |
| Genre | : |
| ISBN | : |
Eleven microcircuit logic gates, representing five types of construction techniques, and a number of thin-film components were tested for transient responses using pulsed ionizing radiation and for permanent damage using neutrons. A linear accelerator provided the radiation for both tests (10-Mev electrons and uranium photoneutrons respectively). Logic failures due to ionizing radiation pulses required from 6 to 1,000 rads (Si) or from 10 to the 8 power to 10 to the 10 power rads (Si)/sec and occurred usually in the 1 state but occasionally at lower radiation levels in the 0 state. Detailed studies were also made on components that were electrically isolated from each circuit. Results indicate that the failure levels are primarily a function of circuit design and that construction methods, although having some effect, are of less significance. Responses of thin-film components were attributed mainly to secondary-emission effects. Neutron irradiation caused all circuits to fail at about 10 to the 15 power n/cm/sq (E> 10 kev). The circuit degradation was due entirely to the degradation of the circuit transistors. Higher leakage currents developed in monolithic circuits had no effect on circuit performance. Failure levels depended on the transistor gain degradation, its initial value, and the minimum gain required for the circuit to function. (Author).
| Author | : James P. Raymond |
| Publisher | : |
| Total Pages | : 220 |
| Release | : 1965 |
| Genre | : |
| ISBN | : |
The purpose was to compare microcircuits of differing construction techniques to determine their relative vulnerability, to study basic radiation-induced failure mechanisms, and to relate these mechanisms to both construction technique and circuit design. Test specimens were of three basic circuit types of five different fabrication techniques. Circuit types included digital logic gates, flip-flops, and differential or digital sense amplifiers. Fabrication techniques represented monolithic, multiple-chip, thin film compatible, oxide-isolation, and thin-film hybrid. Experimental study consisted of determining the electrical circuit performance parameters, the transient response in pulsed ionizing radiation environments, and permanent degradation from exposure to a pulsed reactor neutron/gamma environment. Failure mechanisms were, when possible, related analyticall, to the characteristics of the circuit and the fabrication technique. (Author).
| Author | : James P. Raymond |
| Publisher | : |
| Total Pages | : 183 |
| Release | : 1965 |
| Genre | : |
| ISBN | : |
The transient radiation effects in 17 circuit types were experimentally studied in detail. Conclusions regarding the vulnerability of each circuit type were presented in the previous discussions. The overall conclusion might be that the circuit design is the most important consideration in the circuit vulnerability with the specific circuit fabrication technique closely following. Optimum circuit design will include the widest allowable margin for transistor neutron-induced gain degradation and a trade-off between the ionizing-radiation compensation and turn-on transistor photocurrents. Observed transient responses in the p-n junction isolation circuits were substantially greater than the responses observed in the passive substrate or polycrystalline-oxide isolation circuits. For identical circuits the low level ionizing radiation response would be the greatest for the monolithic-chip circuit followed by the compatible thin-film, polycrystalline-oxide, multiple-chip and thin-film hybrid in order of decreasing response. With the exception of the monolithic response, the relative circuit response between types will be dominated by the specific circuit characteristics. (Author).
| Author | : W. W. Grannemann |
| Publisher | : |
| Total Pages | : 330 |
| Release | : 1966 |
| Genre | : Radiation |
| ISBN | : |
A transport theory model is developed for microcircuit devices under transient radiation. The transport theory is shown to reduce to diffusion theory with proper approximations. A lossy transmission line model is compared with the Linvill model. Experimental measurements are given on air effects, secondary emission effects, surface conductance, and dry nitrogen effects for typical microcircuits under transient radiation. Comparisons are made between transient radiation effects from oxide-isolated and junction-isolated microcircuits. Cancellation circuits are developed for X-ray-induced currents. An elementary Townsend theory of discharge is applied to the problem of arcs between microcircuit leads in the presence of radiation. Recommendations are made on hardening microcircuits against transient radiation effects. (Author).
| Author | : D. C. Jones |
| Publisher | : |
| Total Pages | : 122 |
| Release | : 1963 |
| Genre | : Electronic apparatus and appliances |
| ISBN | : |
| Author | : W. W. GRANNEMANN |
| Publisher | : |
| Total Pages | : 150 |
| Release | : 1966 |
| Genre | : |
| ISBN | : |
A series of experimental studies was conducted on transistor elements suitable for microcircuits. A relationship of transient radiation effects to active volume and other parameters was made. The experimental and theoretical method developed offers a way of obtaining minority carrier lifetimes, depletion layer width, junction area, diffusion length, and active volume when the absorbed dose and the ionization efficiency are known in the transistor element of a microcircuit. Conversely, given the above parameters it is possible to determine the primary photocurrent of the microcircuit junction under a variety of radiation conditions. It was shown that the fundamental Boltzmann equation describing charge transport in semiconductors can be used to modify the usual continuity equation to obtain a more accurate circuit model for transistor elements in microcircuits. The oxide-isolated microcircuits were tested and compared with the usual backbiased isolation junction diode type.
| Author | : |
| Publisher | : |
| Total Pages | : 127 |
| Release | : 1965 |
| Genre | : |
| ISBN | : |
In order to obtain complete up-to-date knowledge of the work accomplished and presently being done on the effects of transient nuclear radiation on microelectronics, a survey of the laboratories investigating this subject was conducted. Telephone contacts were made with specific individuals in 53 different laboratories. Data were obtained by means of questionnaires, reports, and personal visits. Abstracts of each document or other data source are included in the report. The abstracts describe the devices tested and the test environment, the type of dosimetry used, the general results obtained, and provide other relevant information. Summaries of failure levels are given in the abstracts whenever the information was readily available. A tabulated summary of the devices tested and the test conditions is presented. Failure levels observed by different investigators are compared for a few duplicated devices. Nine classified abstracts are contained in a supplement to the main report.
| Author | : |
| Publisher | : |
| Total Pages | : 507 |
| Release | : 1995 |
| Genre | : |
| ISBN | : |
The objectives of the Transient Radiation Effects on Electronics (TREE) Handbook are to (1) provide information about radiation effects on semiconductor devices and materials, (2) provide guidelines for microelectronic radiation hardening technology, and (3) serve as a reference for radiation hardness assurance and microelectronic radiation testing. The radiation environments addressed in this handbook include those produced by nuclear weapons effects (NWE) and natural space. The NWE environment includes x rays, gamma rays, and neutrons. The natural space environment includes photons and electrons trapped in the Van Allen belt, and neutrons, heavy ions, and cosmic rays found in space.
| Author | : Raoul Velazco |
| Publisher | : Springer |
| Total Pages | : 401 |
| Release | : 2019-04-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030046605 |
This book provides readers with invaluable overviews and updates of the most important topics in the radiation-effects field, enabling them to face significant challenges in the quest for the insertion of ever-higher density and higher performance electronic components in satellite systems. Readers will benefit from the up-to-date coverage of the various primary (classical) sub-areas of radiation effects, including the space and terrestrial radiation environments, basic mechanisms of total ionizing dose, digital and analog single-event transients, basic mechanisms of single-event effects, system-level SEE analysis, device-level, circuit-level and system-level hardening approaches, and radiation hardness assurance. Additionally, this book includes in-depth discussions of several newer areas of investigation, and current challenges to the radiation effects community, such as radiation hardening by design, the use of Commercial-Off-The-Shelf (COTS) components in space missions, CubeSats and SmallSats, the use of recent generation FPGA’s in space, and new approaches for radiation testing and validation. The authors provide essential background and fundamentals, in addition to information on the most recent advances and challenges in the sub-areas of radiation effects. Provides a concise introduction to the fundamentals of radiation effects, latest research results, and new test methods and procedures; Discusses the radiation effects and mitigation solutions for advanced integrated circuits and systems designed to operate in harsh radiation environments; Includes coverage of the impact of Small Satellites in the space industry.
