Auger Electron Spectroscopy

Auger Electron Spectroscopy
Author: Donald T. Hawkins
Publisher: Springer Science & Business Media
Total Pages: 305
Release: 2012-12-06
Genre: Science
ISBN: 1468413872

Auger electron spectroscopy is rapidly developing into the single most powerful analytical technique in basic and applied science.for investigating the chemical and structural properties of solids. Its ex plosive growth beginning in 1967 was triggered by the development of Auger analyzers capable of de tecting one atom layer of material in a fraction of a second. Continued growth was guaranteed firstly by the commercial availability of apparatus which combined the capabilities of scanning electron mi croscopy and ion-mill depth profiling with Auger analysis, and secondly by the increasing need to know the atomistics of many processes in fundamental research and engineering applications. The expanding use of Auger analysis was accompanied by an increase in the number of publications dealing with it. Because of the developing nature of Auger spectroscopy, the articles have appeared in many different sources covering diverse disciplines, so that it is extremely difficult to discover just what has or has not been subjected to Auger analysis. In this situation, a comprehensive bibliography is obviou-sly useful to those both inside and outside the field. For those in the field, this bibliography should be a wonderful time saver for locating certain references, in researching a particular topic, or when considering various aspects of instrumentation or data analysis. This bibliography not only provides the most complete listing of references pertinent to surface Auger analysis available today, but it is also a basis for extrapolating from past trends to future expectations.

Scientific and Technical Aerospace Reports

Scientific and Technical Aerospace Reports
Author:
Publisher:
Total Pages: 700
Release: 1995
Genre: Aeronautics
ISBN:

Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.

Silicon Molecular Beam Epitaxy

Silicon Molecular Beam Epitaxy
Author: E. Kasper
Publisher: CRC Press
Total Pages: 306
Release: 2018-05-04
Genre: Technology & Engineering
ISBN: 1351085077

This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Porous Silicon Science and Technology

Porous Silicon Science and Technology
Author: Jean-Claude Vial
Publisher: Springer Science & Business Media
Total Pages: 363
Release: 2013-03-14
Genre: Science
ISBN: 3662031205

The discovery of bright visible light emission from porous silicon has opened the door to various nanometer sized silicon structures where the confinement of carriers gives rise to interesting physical properties. While the high efficiency of the light emission in the visible range is the common and the most prominent feature, their structures display similar properties with other highly divided materials (even non semiconductors), and then justify a multidisciplinary approach. This along with potential applications has attracted a large number of researchers followed by students to be trained. Until now international conferences have provided the exchange of information but have remained highly specialised so it was time to give thought to the organisation of topical and advanced lectures where the multidisciplinarity and the didactic approach are paramount. L'ecole des Houches was ideally devoted to that purpose. The meeting : " Luminescence of porous silicon and silicon nanostructures" was the first international school on this topic but some aspects in the organisation and the attendance have given an international workshop flavor to it. The school by itself has trained 82 «students», most of them were students starting their Ph. D thesis. 50% were French citizens and the other represented countries were Germany, England, USA, Czechoslovakia, The Netherlands, Italy, Japan, Poland, Spain, Canada, Brazil, India and Russia.