The Development Of A Nonvolatile Ferroelectric Memeory With Nondestructive Readout
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| Author | : Evelyn Tina Breyer |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 216 |
| Release | : 2022-02-08 |
| Genre | : Technology & Engineering |
| ISBN | : 3755708523 |
Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
| Author | : Stefan Ferdinand Müller |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 137 |
| Release | : 2016-04-08 |
| Genre | : Technology & Engineering |
| ISBN | : 3739248947 |
This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.
| Author | : A. S. Bhalla |
| Publisher | : |
| Total Pages | : 490 |
| Release | : 1992 |
| Genre | : Science |
| ISBN | : |
| Author | : |
| Publisher | : |
| Total Pages | : 936 |
| Release | : 1999 |
| Genre | : Electric apparatus and appliances |
| ISBN | : |
| Author | : Valerie Kelly |
| Publisher | : World Scientific |
| Total Pages | : 852 |
| Release | : 1991-05-29 |
| Genre | : |
| ISBN | : 9814569569 |
Over the last three years a significant program of detector technology research and development for high luminosity, high energy hadron-hadron colliders has been underway in the United States, Japan and Europe. In as much as the first formal steps have been undertaken to initiate the experimental program at the Superconducting Super Collider (SSC), it is appropriate to assess in detail the status of this R&D effort.Results and Plans for Advanced Technology R&D for Particle Physics Detectors Appropriate for SSC Experiments are Presented. Specific Topics include: Calorimetry; Particle Tracking and Identification Techniques; Vertex-Detection; Magnets; Front-End Electronics; Data Acquisition Electronics; Techniques in Triggering; Data Transmission; Data Analysis and Simulation Software; Studies on Radiation Damage to Materials and Electronics.
| Author | : Matthew F. Ginobili |
| Publisher | : Nova Publishers |
| Total Pages | : 268 |
| Release | : 2007 |
| Genre | : Technology & Engineering |
| ISBN | : 9781600212918 |
Nanotechnology is a 'catch-all' description of activities at the level of atoms and molecules that have applications in the real world. A manometer is a billionth of a meter, about 1/80,000 of the diameter of a human hair, or 10 times the diameter of a hydrogen atom. Nanotechnology is now used in precision engineering, new materials development as well as in electronics; electromechanical systems as well as mainstream biomedical applications in areas such as gene therapy, drug delivery and novel drug discovery techniques. This book presents the latest research in this frontier field.
| Author | : Thomas B. Elliot |
| Publisher | : Nova Publishers |
| Total Pages | : 270 |
| Release | : 2005 |
| Genre | : Science |
| ISBN | : 9781594545740 |
This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.
| Author | : Yoshio Nishi |
| Publisher | : Woodhead Publishing |
| Total Pages | : 664 |
| Release | : 2019-06-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0081025858 |
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory
| Author | : Ram K. Gupta |
| Publisher | : CRC Press |
| Total Pages | : 396 |
| Release | : 2024-07-10 |
| Genre | : Technology & Engineering |
| ISBN | : 1040040926 |
This book provides readers with state-of-the-art knowledge of established and emerging semiconducting materials, their processing, and the fabrication of chips and microprocessors. In addition to covering the fundamentals of these materials, it details the basics and workings of many semiconducting devices and their role in modern electronics and explores emerging semiconductors and their importance in future devices. • Provides readers with latest advances in semiconductors. • Covers diodes, transistors, and other devices using semiconducting materials. • Covers advances and challenges in semiconductors and their technological applications. • Discusses fundamentals and characteristics of emerging semiconductors for chip manufacturing. This book provides directions to scientists, engineers, and researchers in materials engineering and related disciplines to help them better understand the physics, characteristics, and applications of modern semiconductors.
| Author | : Byung-Eun Park |
| Publisher | : Springer |
| Total Pages | : 350 |
| Release | : 2016-09-02 |
| Genre | : Technology & Engineering |
| ISBN | : 940240841X |
This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
