Simulation And Modeling Of Emerging Devices
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| Author | : Brinda Bhowmick |
| Publisher | : Cambridge Scholars Publishing |
| Total Pages | : 136 |
| Release | : 2023-05-10 |
| Genre | : Technology & Engineering |
| ISBN | : 1527507041 |
This book covers the physical principles, modelling, fabrication and applications of Tunnel Field Effect Transistors (TFETs) and Fin Field Effect Transistors (FinFETs). This is intended to act as a reference for undergraduate, postgraduate and research scholars belonging to backgrounds of Applied Physics, Electrical and Electronics Engineering and Material Science. Of paramount importance is the need to understand the simulation aspects of these devices, the validity of mathematical models, basics on fabrication and details of applications of these nanoscale devices. The presentation of the book assumes that the reader has fundamental concepts of semiconductor device physics and electronic circuits. A course such as the one this book is intended to accompany and motivate both students and scholars to get involved in the research on TFETs and FinFETs. Further, this book can act as a reference for device engineers and scientists who need to get updated information on device and technological developments.
| Author | : National Research Council |
| Publisher | : National Academies Press |
| Total Pages | : 376 |
| Release | : 2012-06-07 |
| Genre | : Science |
| ISBN | : 0309253624 |
NASA's Office of the Chief Technologist (OCT) has begun to rebuild the advanced space technology program in the agency with plans laid out in 14 draft technology roadmaps. It has been years since NASA has had a vigorous, broad-based program in advanced space technology development and its technology base has been largely depleted. However, success in executing future NASA space missions will depend on advanced technology developments that should already be underway. Reaching out to involve the external technical community, the National Research Council (NRC) considered the 14 draft technology roadmaps prepared by OCT and ranked the top technical challenges and highest priority technologies that NASA should emphasize in the next 5 years. This report provides specific guidance and recommendations on how the effectiveness of the technology development program managed by OCT can be enhanced in the face of scarce resources.
| Author | : Mark Lundstrom |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 223 |
| Release | : 2006-06-18 |
| Genre | : Technology & Engineering |
| ISBN | : 0387280030 |
To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
| Author | : Xun Li |
| Publisher | : Cambridge University Press |
| Total Pages | : 375 |
| Release | : 2009-06-11 |
| Genre | : Technology & Engineering |
| ISBN | : 0521875102 |
Get hands-on experience of optoelectronic device design and simulation using numerical methods.
| Author | : Bartlomiej F. Romanowicz |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 178 |
| Release | : 1998-10-31 |
| Genre | : Technology & Engineering |
| ISBN | : 9780792383062 |
Over the past two decades, technologies for microsystems fabrication have made considerable progress. This has made possible a large variety of new commercial devices ranging, for example, from integrated pressure and acceleration microsensors to active micromirror arrays for image projection. In the near future, there will be a number of new devices, which will be commercialized in many application areas. The field of microsystems is characterized by its wide diversity, which requires a multidisciplinary approach for design and processes as well as in application areas. Although there is a common technological background derived from integrated circuits, it is clear that microsystems will require additional application-specific technologies. Since most microsystem technologies are based on batch processing and dedicated to mass production, prototyping is likely to be an expensive and time-consuming step. It is recognized that standardization of the processes as well as of the design tools will definitely help reduce the entry cost of microsystems. This creates a very challenging situation for the design, modeling and simulation of microsystems. Methodology for the Modeling and Simulation of Microsystems is the first book to give an overview of the problems associated with modeling and simulation of microsystems. It introduces a new methodology, which is supported by several examples. It should provide a useful starting point for both scientists and engineers seeking background information for efficient design of microsystems.
| Author | : Shubham Sahay |
| Publisher | : John Wiley & Sons |
| Total Pages | : 496 |
| Release | : 2019-02-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1119523532 |
A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.
| Author | : Gennady Gildenblat |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 531 |
| Release | : 2010-06-22 |
| Genre | : Technology & Engineering |
| ISBN | : 9048186145 |
Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
| Author | : Joachim Piprek |
| Publisher | : John Wiley & Sons |
| Total Pages | : 521 |
| Release | : 2007-04-09 |
| Genre | : Technology & Engineering |
| ISBN | : 3527406670 |
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.
| Author | : Richard Fujimoto |
| Publisher | : Springer |
| Total Pages | : 138 |
| Release | : 2017-08-18 |
| Genre | : Computers |
| ISBN | : 3319585444 |
This illuminating text/reference presents a review of the key aspects of the modeling and simulation (M&S) life cycle, and examines the challenges of M&S in different application areas. The authoritative work offers valuable perspectives on the future of research in M&S, and its role in engineering complex systems. Topics and features: reviews the challenges of M&S for urban infrastructure, healthcare delivery, automated vehicle manufacturing, deep space missions, and acquisitions enterprise; outlines research issues relating to conceptual modeling, covering the development of explicit and unambiguous models, communication and decision-making, and architecture and services; considers key computational challenges in the execution of simulation models, in order to best exploit emerging computing platforms and technologies; examines efforts to understand and manage uncertainty inherent in M&S processes, and how these can be unified under a consistent theoretical and philosophical foundation; discusses the reuse of models and simulations to accelerate the simulation model development process. This thought-provoking volume offers important insights for all researchers involved in modeling and simulation across the full spectrum of disciplines and applications, defining a common research agenda to support the entire M&S research community.
| Author | : Siegfried Selberherr |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 525 |
| Release | : 2012-12-06 |
| Genre | : Computers |
| ISBN | : 3709166578 |
The "Fifth International Conference on Simulation of Semiconductor Devices and Processes" (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
