Silicon Carbide And Related Materials 2004
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| Author | : Roberta Nipoti |
| Publisher | : |
| Total Pages | : 1134 |
| Release | : 2005 |
| Genre | : Science |
| ISBN | : |
Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond are examples of wide-bandgap semiconductors having chemical, electrical and optical properties which make them very attractive for the fabrication of high-power and high-frequency electronic devices, as well as of light-emitters and sensors which have to operate under harsh conditions. The book comprises the proceedings of the 5th edition of the European Conference on Silicon Carbide and Related Materials, held from the 31st August to the 4th September 2004 in Bologna, Italy. This conference series here continued its tradition of being the main European forum for exchanging results, and discussing progress, between those university and industry researchers who are most active in the fields of SiC and related materials. Attendees at the conference highlighted the progress made in material growth technology, characterization of material properties and technological processing for electronic applications. Many electronics devices were presented: including high-voltage, high power-density and high-temperature components; as well as microwave components. Radiation-hard sensors were also presented.These proceedings fully document the latest experimental and theoretical understanding of the growth of bulk and epitaxial layers, the properties of the resultant materials, the development of suitable processes and of electronic devices that can best exploit and benefit from the outstanding physical properties that are offered by wide-bandgap materials.
| Author | : Sergey Rumyantsev |
| Publisher | : World Scientific |
| Total Pages | : 342 |
| Release | : 2006-07-25 |
| Genre | : Technology & Engineering |
| ISBN | : 981447777X |
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 342 |
| Release | : 2006 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568352 |
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
| Author | : Wai-Kai Chen |
| Publisher | : CRC Press |
| Total Pages | : 2322 |
| Release | : 2018-10-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1420005960 |
For the new millenium, Wai-Kai Chen introduced a monumental reference for the design, analysis, and prediction of VLSI circuits: The VLSI Handbook. Still a valuable tool for dealing with the most dynamic field in engineering, this second edition includes 13 sections comprising nearly 100 chapters focused on the key concepts, models, and equations. Written by a stellar international panel of expert contributors, this handbook is a reliable, comprehensive resource for real answers to practical problems. It emphasizes fundamental theory underlying professional applications and also reflects key areas of industrial and research focus. WHAT'S IN THE SECOND EDITION? Sections on... Low-power electronics and design VLSI signal processing Chapters on... CMOS fabrication Content-addressable memory Compound semiconductor RF circuits High-speed circuit design principles SiGe HBT technology Bipolar junction transistor amplifiers Performance modeling and analysis using SystemC Design languages, expanded from two chapters to twelve Testing of digital systems Structured for convenient navigation and loaded with practical solutions, The VLSI Handbook, Second Edition remains the first choice for answers to the problems and challenges faced daily in engineering practice.
| Author | : Wolfgang J. Choyke |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 911 |
| Release | : 2013-04-17 |
| Genre | : Technology & Engineering |
| ISBN | : 3642188702 |
Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
| Author | : Zhe Chuan Feng |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 480 |
| Release | : 2004-06-09 |
| Genre | : Science |
| ISBN | : 9783540206668 |
In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.
| Author | : Peter Friedrichs |
| Publisher | : John Wiley & Sons |
| Total Pages | : 528 |
| Release | : 2011-04-08 |
| Genre | : Science |
| ISBN | : 3527629068 |
This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
| Author | : Zhe Chuan Feng |
| Publisher | : CRC Press |
| Total Pages | : 465 |
| Release | : 2023-07-10 |
| Genre | : Science |
| ISBN | : 0429583958 |
This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.
| Author | : Daniel M. Fleetwood |
| Publisher | : CRC Press |
| Total Pages | : 772 |
| Release | : 2008-11-19 |
| Genre | : Science |
| ISBN | : 1420043773 |
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
| Author | : Rosario Gerhardt |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 550 |
| Release | : 2011-04-04 |
| Genre | : Science |
| ISBN | : 9533072016 |
In this book, we explore an eclectic mix of articles that highlight some new potential applications of SiC and different ways to achieve specific properties. Some articles describe well-established processing methods, while others highlight phase equilibria or machining methods. A resurgence of interest in the structural arena is evident, while new ways to utilize the interesting electromagnetic properties of SiC continue to increase.
