Semiconductor Theory And Practice
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| Author | : Zhenghao Gan |
| Publisher | : McGraw Hill Professional |
| Total Pages | : 624 |
| Release | : 2012-10-10 |
| Genre | : Technology & Engineering |
| ISBN | : 007175427X |
Proven processes for ensuring semiconductor device reliability Co-written by experts in the field, Semiconductor Process Reliability in Practice contains detailed descriptions and analyses of reliability and qualification for semiconductor device manufacturing and discusses the underlying physics and theory. The book covers initial specification definition, test structure design, analysis of test structure data, and final qualification of the process. Real-world examples of test structure designs to qualify front-end-of-line devices and back-end-of-line interconnects are provided in this practical, comprehensive guide. Coverage includes: Basic device physics Process flow for MOS manufacturing Measurements useful for device reliability characterization Hot carrier injection Gate-oxide integrity (GOI) and time-dependent dielectric breakdown (TDDB) Negative bias temperature instability Plasma-induced damage Electrostatic discharge protection of integrated circuits Electromigration Stress migration Intermetal dielectric breakdown
| Author | : A. J. van de Goor |
| Publisher | : John Wiley & Sons |
| Total Pages | : 542 |
| Release | : 1991 |
| Genre | : Technology & Engineering |
| ISBN | : |
Comprehensive coverage of memory test problems at chip, array and board level is provided in this book. For each of these test levels a class of fault models is introduced along with tests for these models. The author also presents algorithms of relevant fault models, together with proofs of their correctness. Special attention is given to why a fault model belongs to a particular class and why it is of interest. A software package, suitable for use on IBM PCs and compatibles, is also available which consists of a set of memory test programs and a simulation package demonstrating how the algorithms are executed and the relationship of the algorithm with the memory
| Author | : Gary S. May |
| Publisher | : John Wiley & Sons |
| Total Pages | : 428 |
| Release | : 2006-05-26 |
| Genre | : Technology & Engineering |
| ISBN | : 0471790273 |
A practical guide to semiconductor manufacturing from processcontrol to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Controlcovers all issues involved in manufacturing microelectronic devicesand circuits, including fabrication sequences, process control,experimental design, process modeling, yield modeling, and CIM/CAMsystems. Readers are introduced to both the theory and practice ofall basic manufacturing concepts. Following an overview of manufacturing and technology, the textexplores process monitoring methods, including those that focus onproduct wafers and those that focus on the equipment used toproduce wafers. Next, the text sets forth some fundamentals ofstatistics and yield modeling, which set the foundation for adetailed discussion of how statistical process control is used toanalyze quality and improve yields. The discussion of statistical experimental design offers readers apowerful approach for systematically varying controllable processconditions and determining their impact on output parameters thatmeasure quality. The authors introduce process modeling concepts,including several advanced process control topics such asrun-by-run, supervisory control, and process and equipmentdiagnosis. Critical coverage includes the following: * Combines process control and semiconductor manufacturing * Unique treatment of system and software technology and managementof overall manufacturing systems * Chapters include case studies, sample problems, and suggestedexercises * Instructor support includes electronic copies of the figures andan instructor's manual Graduate-level students and industrial practitioners will benefitfrom the detailed exami?nation of how electronic materials andsupplies are converted into finished integrated circuits andelectronic products in a high-volume manufacturingenvironment. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment. An Instructor Support FTP site is also available.
| Author | : S. L. Kakani |
| Publisher | : New Age International |
| Total Pages | : 80 |
| Release | : 2005 |
| Genre | : Electronics |
| ISBN | : 8122415369 |
This Book Is Designed To Meet The Requirements Of Currently Revised Ugc Syllabi Of Electronics Followed Almost By All Indian And Other Universities For B.Sc. (Pass) And B.Sc. (Honours) Students. The Book Would Also Serve As A Comprehensive Text For B.E., Amie And Diploma Students. The Book Presents An Exhaustive Exposition Of The Field With Latest Developments. A Systematic Approach Is Followed Throughout The Book And The Various Principles, Theory And Applications Are Explained In A Simple Easy-To Understand Manner.In Twenty Chapters, The Book Deals With Semi Conductors And Devices, Rectifiers, Voltage Regulations, Switching Devices, Bjt, Jfet, Mosfet, Op Amps, Triac, Diac, Ujt, Digital Circuits, Scr, Solar Cells, Photo Transistor, Cro Television, Ionosphere, Reader, Lasers, Holography, Optical Fibres, Computers, Quantum Dots, Spinotrics, Mems, Etc.The Book Includes Several Solved Examples Throughout The Text To Illustrate The Concepts And Applications And Help In An Easier Understanding Of The Subject. Review Questions And Problems Have Been Included For Easy Understanding Of The Subject. Objective Type Questions, Short Question Answers, True/False And Fill In Blank Questions Throughout The Text Will Be Highly Useful To All And Those Preparing For Various Competitive Entrance Examinations.
| Author | : Simon M. Sze |
| Publisher | : John Wiley & Sons |
| Total Pages | : 828 |
| Release | : 2006-12-13 |
| Genre | : Technology & Engineering |
| ISBN | : 0470068302 |
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
| Author | : Gerald B. Stringfellow |
| Publisher | : Elsevier |
| Total Pages | : 417 |
| Release | : 2012-12-02 |
| Genre | : Science |
| ISBN | : 0323139175 |
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
| Author | : Udo W. Pohl |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 335 |
| Release | : 2013-01-11 |
| Genre | : Technology & Engineering |
| ISBN | : 3642329705 |
Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.
| Author | : James Fiore |
| Publisher | : |
| Total Pages | : 407 |
| Release | : 2017-05-11 |
| Genre | : |
| ISBN | : 9781796543537 |
Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.
| Author | : Albert V. Ferris-Prabhu |
| Publisher | : Artech House Materials Science |
| Total Pages | : 112 |
| Release | : 1992 |
| Genre | : Technology & Engineering |
| ISBN | : |
This text, the first of its kind, delivers a systematically organized introduction to the theory and practice of yield prediction. The book addresses the economic need for accurate yield prediction, and clarifies the important role it plays in the semiconductor industry.
| Author | : Udo W. Pohl |
| Publisher | : Springer Nature |
| Total Pages | : 546 |
| Release | : 2020-07-20 |
| Genre | : Technology & Engineering |
| ISBN | : 3030438694 |
The extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
