Semiconductor Device Modeling with Spice

Semiconductor Device Modeling with Spice
Author: Giuseppe Massabrio
Publisher: McGraw Hill Professional
Total Pages: 500
Release: 1998-12-22
Genre: Technology & Engineering
ISBN: 9780071349550

Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.

Semiconductor Modeling:

Semiconductor Modeling:
Author: Roy Leventhal
Publisher: Springer Science & Business Media
Total Pages: 769
Release: 2007-01-10
Genre: Technology & Engineering
ISBN: 0387241604

Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers

Introduction to Semiconductor Device Modelling

Introduction to Semiconductor Device Modelling
Author: Christopher M. Snowden
Publisher: World Scientific
Total Pages: 242
Release: 1998
Genre: Science
ISBN: 9789810236939

This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.

Semiconductor Modeling Techniques

Semiconductor Modeling Techniques
Author: Xavier Marie
Publisher: Springer Science & Business Media
Total Pages: 267
Release: 2012-06-26
Genre: Technology & Engineering
ISBN: 3642275125

This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

Analysis and Simulation of Semiconductor Devices

Analysis and Simulation of Semiconductor Devices
Author: S. Selberherr
Publisher: Springer Science & Business Media
Total Pages: 308
Release: 2012-12-06
Genre: Technology & Engineering
ISBN: 3709187524

The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Noise in Semiconductor Devices

Noise in Semiconductor Devices
Author: Fabrizio Bonani
Publisher: Springer Science & Business Media
Total Pages: 241
Release: 2013-03-09
Genre: Technology & Engineering
ISBN: 3662045303

Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.

Semiconductor Device Physics and Simulation

Semiconductor Device Physics and Simulation
Author: J.S. Yuan
Publisher: Springer Science & Business Media
Total Pages: 352
Release: 1998-05-31
Genre: Technology & Engineering
ISBN: 9780306457241

The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.

Semiconductor Devices

Semiconductor Devices
Author: Kevin M. Kramer
Publisher: Prentice Hall
Total Pages: 746
Release: 1997
Genre: Business & Economics
ISBN:

CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."

SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES
Author: NANDITA DASGUPTA
Publisher: PHI Learning Pvt. Ltd.
Total Pages: 342
Release: 2004-01-01
Genre: Technology & Engineering
ISBN: 812032398X

Aimed primarily at the undergraduate students pursuing courses in semiconductor physics and semiconductor devices, this text emphasizes the physical understanding of the underlying principles of the subject. Since engineers use semiconductor devices as circuit elements, device models commonly used in the circuit simulators, e.g. SPICE, have been discussed in detail. Advanced topics such as lasers, heterojunction bipolar transistors, second order effects in BJTs, and MOSFETs are also covered. With such in-depth coverage and a practical approach, practising engineers and PG students can also use this book as a ready reference.

Modeling Bipolar Power Semiconductor Devices

Modeling Bipolar Power Semiconductor Devices
Author: Tanya K. Gachovska
Publisher: Morgan & Claypool Publishers
Total Pages: 96
Release: 2013-03
Genre: Technology & Engineering
ISBN: 162705121X

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.