Semiconductor Modeling
Download Semiconductor Modeling full books in PDF, epub, and Kindle. Read online free Semiconductor Modeling ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : Giuseppe Massabrio |
Publisher | : McGraw Hill Professional |
Total Pages | : 500 |
Release | : 1998-12-22 |
Genre | : Technology & Engineering |
ISBN | : 9780071349550 |
Publisher's Note: Products purchased from Third Party sellers are not guaranteed by the publisher for quality, authenticity, or access to any online entitlements included with the product.
Author | : Roy Leventhal |
Publisher | : Springer Science & Business Media |
Total Pages | : 769 |
Release | : 2007-01-10 |
Genre | : Technology & Engineering |
ISBN | : 0387241604 |
Discusses process variation, model accuracy, design flow and many other practical engineering, reliability and manufacturing issues Gives a good overview for a person who is not an expert in modeling and simulation, enabling them to extract the necessary information to competently use modeling and simulation programs Written for engineering students and product design engineers
Author | : Christopher M. Snowden |
Publisher | : World Scientific |
Total Pages | : 242 |
Release | : 1998 |
Genre | : Science |
ISBN | : 9789810236939 |
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Author | : Xavier Marie |
Publisher | : Springer Science & Business Media |
Total Pages | : 267 |
Release | : 2012-06-26 |
Genre | : Technology & Engineering |
ISBN | : 3642275125 |
This book describes the key theoretical techniques for semiconductor research to quantitatively calculate and simulate the properties. It presents particular techniques to study novel semiconductor materials, such as 2D heterostructures, quantum wires, quantum dots and nitrogen containing III-V alloys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance in theory and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.
Author | : S. Selberherr |
Publisher | : Springer Science & Business Media |
Total Pages | : 308 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709187524 |
The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Author | : Fabrizio Bonani |
Publisher | : Springer Science & Business Media |
Total Pages | : 241 |
Release | : 2013-03-09 |
Genre | : Technology & Engineering |
ISBN | : 3662045303 |
Provides an overview of the physical basis of noise in semiconductor devices, and a detailed treatment of numerical noise simulation in small-signal conditions. It presents innovative developments in the noise simulation of semiconductor devices operating in large-signal quasi-periodic conditions.
Author | : J.S. Yuan |
Publisher | : Springer Science & Business Media |
Total Pages | : 352 |
Release | : 1998-05-31 |
Genre | : Technology & Engineering |
ISBN | : 9780306457241 |
The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Author | : Kevin M. Kramer |
Publisher | : Prentice Hall |
Total Pages | : 746 |
Release | : 1997 |
Genre | : Business & Economics |
ISBN | : |
CD-ROM contains: "Win32 version of SGFramework and the simulations contains in the book."
Author | : NANDITA DASGUPTA |
Publisher | : PHI Learning Pvt. Ltd. |
Total Pages | : 342 |
Release | : 2004-01-01 |
Genre | : Technology & Engineering |
ISBN | : 812032398X |
Aimed primarily at the undergraduate students pursuing courses in semiconductor physics and semiconductor devices, this text emphasizes the physical understanding of the underlying principles of the subject. Since engineers use semiconductor devices as circuit elements, device models commonly used in the circuit simulators, e.g. SPICE, have been discussed in detail. Advanced topics such as lasers, heterojunction bipolar transistors, second order effects in BJTs, and MOSFETs are also covered. With such in-depth coverage and a practical approach, practising engineers and PG students can also use this book as a ready reference.
Author | : Tanya K. Gachovska |
Publisher | : Morgan & Claypool Publishers |
Total Pages | : 96 |
Release | : 2013-03 |
Genre | : Technology & Engineering |
ISBN | : 162705121X |
This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models.