Pseudomorphic Hemt Technology And Applications
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| Author | : R.L. Ross |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 352 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 9400916302 |
PHEMT devices and their incorporation into advanced monolithic integrated circuits is the enabling technology for modern microwave/millimeter wave system applications. Although still in its infancy, PHEMT MIMIC technology is already finding applications in both military and commercial systems, including radar, communication and automotive technologies. The successful team in a globally competitive market is one in which the solid-state scientist, circuit designer, system engineer and technical manager are cognizant of those considerations and requirements that influence each other's function. This book provides the reader with a comprehensive review of PHEMT technology, including materials, fabrication and processing, device physics, CAD tools and modelling, monolithic integrated circuit technology and applications. Readers with a broad range of specialities in one or more of the areas of materials, processing, device physics, circuit design, system design and marketing will be introduced quickly to important basic concepts and techniques. The specialist who has specific PHEMT experience will benefit from the broad range of topics covered and the open discussion of practical issues. Finally, the publication offers an additional benefit, in that it presents a broad scope to both the researcher and manager, both of whom must be aware and educated to remain relevant in an ever-expanding technology base.
| Author | : D. Nirmal |
| Publisher | : CRC Press |
| Total Pages | : 434 |
| Release | : 2019-05-14 |
| Genre | : Science |
| ISBN | : 0429862520 |
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
| Author | : I.D. Robertson |
| Publisher | : IET |
| Total Pages | : 583 |
| Release | : 2001-11-30 |
| Genre | : Technology & Engineering |
| ISBN | : 0852967861 |
This book gives an in-depth account of GaAs, InP and SiGe, technologies and describes all the key techniques for the design of amplifiers, ranging from filters and data converters to image oscillators, mixers, switches, variable attenuators, phase shifters, integrated antennas and complete monolithic transceivers.
| Author | : Fazal Ali |
| Publisher | : Artech House Microwave Library |
| Total Pages | : 404 |
| Release | : 1991 |
| Genre | : Technology & Engineering |
| ISBN | : |
Presents reprinted tutorial papers on HEMTs, HBTs and heterojunctions, including papers which report major achievements of the HEMT and HBT technologies in the fields of microwave, millimeter-wave and digital ICs.
| Author | : John L. B. Walker |
| Publisher | : Cambridge University Press |
| Total Pages | : 705 |
| Release | : 2012 |
| Genre | : Technology & Engineering |
| ISBN | : 0521760100 |
This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 443 |
| Release | : 1991-02-20 |
| Genre | : Technology & Engineering |
| ISBN | : 0080864309 |
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
| Author | : Institute of Physics Conference |
| Publisher | : CRC Press |
| Total Pages | : 1352 |
| Release | : 2020-10-28 |
| Genre | : Science |
| ISBN | : 1000157105 |
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
| Author | : Woo |
| Publisher | : CRC Press |
| Total Pages | : 1352 |
| Release | : 1996-04-25 |
| Genre | : Technology & Engineering |
| ISBN | : 9780750303422 |
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
| Author | : Amal Banerjee |
| Publisher | : Springer Nature |
| Total Pages | : 305 |
| Release | : 2023-10-16 |
| Genre | : Technology & Engineering |
| ISBN | : 3031457501 |
This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
| Author | : Institution of Electrical Engineers |
| Publisher | : IET |
| Total Pages | : 330 |
| Release | : 1991 |
| Genre | : Science |
| ISBN | : 9780863412042 |
This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
