Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995
Author: Woo
Publisher: CRC Press
Total Pages: 1352
Release: 1996-04-25
Genre: Technology & Engineering
ISBN: 9780750303422

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995

Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August-2 September, 1995
Author: Institute of Physics Conference
Publisher: CRC Press
Total Pages: 1352
Release: 2020-10-28
Genre: Science
ISBN: 1000157105

Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany

Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany
Author: Günter Weimann
Publisher: CRC Press
Total Pages: 880
Release: 1994-01-01
Genre: Technology & Engineering
ISBN: 9780750302951

Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.

High-Speed Heterostructure Devices

High-Speed Heterostructure Devices
Author: Patrick Roblin
Publisher: Cambridge University Press
Total Pages: 726
Release: 2002-03-07
Genre: Technology & Engineering
ISBN: 1139437461

Fuelled by rapid growth in communications technology, silicon heterostructures and related high-speed semiconductors are spearheading the drive toward smaller, faster and lower power devices. High-Speed Heterostructure Devices is a textbook on modern high-speed semiconductor devices intended for both graduate students and practising engineers. This book is concerned with the underlying physics of heterostructures as well as some of the most recent techniques for modeling and simulating these devices. Emphasis is placed on heterostructure devices of the immediate future such as the MODFET, HBT and RTD. The principles of operation of other devices such as the Bloch Oscillator, RITD, Gunn diode, quantum cascade laser and SOI and LD MOSFETs are also introduced. Initially developed for a graduate course taught at Ohio State University, the book comes with a complete set of homework problems and a web link to MATLAB programs supporting the lecture material.

New Serial Titles

New Serial Titles
Author:
Publisher:
Total Pages: 2012
Release: 1995
Genre: Periodicals
ISBN:

A union list of serials commencing publication after Dec. 31, 1949.

Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)

Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)
Author: David J Lockwood
Publisher: World Scientific
Total Pages: 2858
Release: 1995-01-20
Genre:
ISBN: 9814550159

These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.

RF and Microwave Semiconductor Device Handbook

RF and Microwave Semiconductor Device Handbook
Author: Mike Golio
Publisher: CRC Press
Total Pages: 336
Release: 2017-12-19
Genre: Technology & Engineering
ISBN: 1420039970

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

SiC Materials and Devices

SiC Materials and Devices
Author:
Publisher: Academic Press
Total Pages: 435
Release: 1998-07-02
Genre: Technology & Engineering
ISBN: 0080864503

This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.