Polycrystalline Silicon Germanium For Fabrication Release And Packaging Of Microelectromechanical Systems
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3D and Circuit Integration of MEMS
Author | : Masayoshi Esashi |
Publisher | : John Wiley & Sons |
Total Pages | : 528 |
Release | : 2021-03-16 |
Genre | : Technology & Engineering |
ISBN | : 3527823255 |
Explore heterogeneous circuit integration and the packaging needed for practical applications of microsystems MEMS and system integration are important building blocks for the “More-Than-Moore” paradigm described in the International Technology Roadmap for Semiconductors. And, in 3D and Circuit Integration of MEMS, distinguished editor Dr. Masayoshi Esashi delivers a comprehensive and systematic exploration of the technologies for microsystem packaging and heterogeneous integration. The book focuses on the silicon MEMS that have been used extensively and the technologies surrounding system integration. You’ll learn about topics as varied as bulk micromachining, surface micromachining, CMOS-MEMS, wafer interconnection, wafer bonding, and sealing. Highly relevant for researchers involved in microsystem technologies, the book is also ideal for anyone working in the microsystems industry. It demonstrates the key technologies that will assist researchers and professionals deal with current and future application bottlenecks. Readers will also benefit from the inclusion of: A thorough introduction to enhanced bulk micromachining on MIS process, including pressure sensor fabrication and the extension of MIS process for various advanced MEMS devices An exploration of epitaxial poly Si surface micromachining, including process condition of epi-poly Si, and MEMS devices using epi-poly Si Practical discussions of Poly SiGe surface micromachining, including SiGe deposition and LP CVD polycrystalline SiGe A concise treatment of heterogeneously integrated aluminum nitride MEMS resonators and filters Perfect for materials scientists, electronics engineers, and electrical and mechanical engineers, 3D and Circuit Integration of MEMS will also earn a place in the libraries of semiconductor physicists seeking a one-stop reference for circuit integration and the practical application of microsystems.
Silicon Carbide Microsystems for Harsh Environments
Author | : Muthu Wijesundara |
Publisher | : Springer Science & Business Media |
Total Pages | : 247 |
Release | : 2011-05-17 |
Genre | : Technology & Engineering |
ISBN | : 1441971211 |
Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods towards system level integration of components and key challenges are evaluated and discussed based on the current state of SiC materials processing and device technology. Issues such as temperature mismatch, process compatibility and temperature stability of individual components and how these issues manifest when building the system receive thorough investigation. The material covered not only reviews the state-of-the-art MEMS devices, provides a framework for the joining of electronics and MEMS along with packaging into usable harsh-environment-ready sensor modules.
17th IEEE international conference on micro electro mechanical systems
Author | : IEEE International Conference on Micro Electro Mechanical Systems 17, 2004, Maastricht, The Netherlands |
Publisher | : |
Total Pages | : 868 |
Release | : 2004 |
Genre | : |
ISBN | : 9780780382657 |
Advanced Packaging
Author | : |
Publisher | : |
Total Pages | : 52 |
Release | : 2007-07 |
Genre | : |
ISBN | : |
Advanced Packaging serves the semiconductor packaging, assembly and test industry. Strategically focused on emerging and leading-edge methods for manufacturing and use of advanced packages.
MEMS
Author | : Mohamed Gad-el-Hak |
Publisher | : CRC Press |
Total Pages | : 678 |
Release | : 2005-11-29 |
Genre | : Technology & Engineering |
ISBN | : 1420036564 |
Thoroughly revised and updated, the new edition of the best-selling MEMS Handbook is now presented as a three-volume set that offers state-of-the-art coverage of microelectromechanical systems. Through chapters contributed by top experts and pioneers in the field, MEMS: Design and Fabrication presents a comprehensive look at the materials, procedures, tools, and techniques of MEMS fabrication. New chapters in this edition examine the materials and fabrication of polymer microsystems and optical diagnostics for investigating the entrance length in microchannels. Rigorous yet accessible, this volume provides the practical knowledge needed for work in cutting-edge MEMS applications.
Poly-SiGe for MEMS-above-CMOS Sensors
Author | : Pilar Gonzalez Ruiz |
Publisher | : Springer Science & Business Media |
Total Pages | : 210 |
Release | : 2013-07-17 |
Genre | : Technology & Engineering |
ISBN | : 9400767994 |
Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence of deposition conditions, germanium content and doping concentration on the electrical and piezoresistive properties of boron-doped poly-SiGe. The development of a CMOS-compatible process flow, with special attention to the sealing method, is also described. Piezoresistive pressure sensors with different areas and piezoresistor designs were fabricated and tested. Together with the piezoresistive pressure sensors, also functional capacitive pressure sensors were successfully fabricated on the same wafer, proving the versatility of poly-SiGe for MEMS sensor applications. Finally, a detailed analysis of the MEMS processing impact on the underlying CMOS circuit is also presented.