Plasma Enhanced Chemical Vapor Depsoition of Tungsten Carbide Films on Iron
Author | : Narayan Vaidyanathan |
Publisher | : |
Total Pages | : 52 |
Release | : 2002 |
Genre | : Plasma-enhanced chemical vapor deposition |
ISBN | : |
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Author | : Narayan Vaidyanathan |
Publisher | : |
Total Pages | : 52 |
Release | : 2002 |
Genre | : Plasma-enhanced chemical vapor deposition |
ISBN | : |
Author | : John Ka-ngai Chu |
Publisher | : |
Total Pages | : 270 |
Release | : 1982 |
Genre | : Dissertations, Academic |
ISBN | : |
Author | : David Perese |
Publisher | : |
Total Pages | : 158 |
Release | : 1996 |
Genre | : Plasma-enhanced chemical vapor deposition |
ISBN | : |
Author | : Haresh Gnaninda Samarasinghe Siriwardane |
Publisher | : |
Total Pages | : 204 |
Release | : 1993 |
Genre | : |
ISBN | : |
Author | : Steven Walton Rynders |
Publisher | : |
Total Pages | : 742 |
Release | : 1991 |
Genre | : |
ISBN | : |
The influences of precursor molecular structure and electronic properties on the molecular structure, stoichiometry, and optical properties of a-SiC:H alloy films prepared through plasma enhanced chemical vapor deposition were investigated using infrared spectroscopy, ultraviolet-visible absorption spectroscopy, and sputtered neutral atom mass spectrometry (SNMS). Members of the homologous series tetramethylsilane (TeMS), trimethylsilane (TrMS), and dimethylsilane (DMS) as well as methane-silane (MS) were characterized as a-SiC:H precursors. Film structure, optical properties, and stoichiometry were studied as a function of precursor structure and deposition conditions, with deposition pressure serving as the manipulated variable. The infrared spectra of films prepared from the alkylsilane precursors revealed a strong dependence of the film structure on the deposition pressure, with high pressures ($>$0.1 torr) producing linear, polymeric films, and low pressures ($
Author | : Chris R. Kleijn |
Publisher | : Birkhäuser |
Total Pages | : 138 |
Release | : 2013-11-11 |
Genre | : Science |
ISBN | : 3034877412 |
Semiconductor equipment modeling has in recent years become a field of great interest, because it offers the potential to support development and optimization of manufacturing equipment and hence reduce the cost and improve the quality of the reactors. This book is the result of two parallel lines of research dealing with the same subject - Modeling of Tungsten CVD processes -, which were per formed independently under very different boundary conditions. On the one side, Chris Kleijn, working in an academic research environment, was able to go deep enough into the subject to laya solid foundation and prove the validity of all the assumptions made in his work. On the other side, Christoph Werner, working in the context of an industrial research lab, was able to closely interact with manufacturing and development engineers in a modern submicron semiconductor processing line. Because of these different approaches, the informal collaboration during the course of the projects proved to be extremely helpful to both sides, even though - or perhaps because - different computer codes, different CVD reactors and also slightly different models were used. In spite of the inconsistencies which might arise from this double approach, we feel that the presentation of both sets of results in one book will be very useful for people working in similar projects.