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| Author | : Institution of Electrical Engineers |
| Publisher | : IET |
| Total Pages | : 330 |
| Release | : 1991 |
| Genre | : Science |
| ISBN | : 9780863412042 |
This book brings together developments in both the physics and engineering of semiconductor devices. Much attention is paid to so-called 'band gap engineering' which is enabling new and higher performance devices to be researched and introduced.
| Author | : Wilfried G. J. H. M. van Sark |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 588 |
| Release | : 2011-11-16 |
| Genre | : Technology & Engineering |
| ISBN | : 3642222757 |
Today’s solar cell multi-GW market is dominated by crystalline silicon (c-Si) wafer technology, however new cell concepts are entering the market. One very promising solar cell design to answer these needs is the silicon hetero-junction solar cell, of which the emitter and back surface field are basically produced by a low temperature growth of ultra-thin layers of amorphous silicon. In this design, amorphous silicon (a-Si:H) constitutes both „emitter“ and „base-contact/back surface field“ on both sides of a thin crystalline silicon wafer-base (c-Si) where the electrons and holes are photogenerated; at the same time, a-Si:H passivates the c-Si surface. Recently, cell efficiencies above 23% have been demonstrated for such solar cells. In this book, the editors present an overview of the state-of-the-art in physics and technology of amorphous-crystalline heterostructure silicon solar cells. The heterojunction concept is introduced, processes and resulting properties of the materials used in the cell and their heterointerfaces are discussed and characterization techniques and simulation tools are presented.
| Author | : Christopher M. Snowden |
| Publisher | : World Scientific |
| Total Pages | : 242 |
| Release | : 1998 |
| Genre | : Science |
| ISBN | : 9789810236939 |
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
| Author | : Henry Kressel |
| Publisher | : Elsevier |
| Total Pages | : 623 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0323144349 |
Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also considered. The book further tackles the heterojunction devices of alloys other than GaAs-AlAs; the devices for special applications; distributed-feedback lasers; and the transient effects in laser diodes. Students taking courses in semiconductor lasers and heterojunction LEDs will find the book useful.
| Author | : Stephen J. Fonash |
| Publisher | : Elsevier |
| Total Pages | : 353 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0323154638 |
Solar Cell Device Physics offers a balanced, in-depth qualitative and quantitative treatment of the physical principles and operating characteristics of solar cell devices. Topics covered include photovoltaic energy conversion and solar cell materials and structures, along with homojunction solar cells. Semiconductor-semiconductor heterojunction cells and surface-barrier solar cells are also discussed. This book consists of six chapters and begins by introducing the reader to the basic physical principles and materials properties that are the foundations of photovoltaic energy conversion, with emphasis on various photovoltaic devices capable of efficiently converting solar energy into usable electrical energy. The electronic and optical properties of crystalline, polycrystalline, and amorphous materials with both organic and inorganic materials are considered, together with the manner in which these properties change from one material class to another and the implications of such changes for photovoltaics. Generation, recombination, and bulk transport are also discussed. The two mechanisms of photocarrier collection in solar cells, drift and diffusion, are then compared. The remaining chapters focus on specific solar cell device classes defined in terms of the interface structure employed: homojunctions, semiconductor-semiconductor heterojunctions, and surface-barrier devices. This monograph is appropriate for use as a textbook for graduate students in engineering and the sciences and for seniors in electrical engineering and applied physics, as well as a reference book for those actively involved in solar cell research and development.
| Author | : John D. Cressler |
| Publisher | : Artech House |
| Total Pages | : 592 |
| Release | : 2003 |
| Genre | : Science |
| ISBN | : 9781580535991 |
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
| Author | : Giorgio Margaritondo |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 348 |
| Release | : 2012-12-06 |
| Genre | : Science |
| ISBN | : 9400930739 |
E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
| Author | : Ferdinand Scholz |
| Publisher | : CRC Press |
| Total Pages | : 256 |
| Release | : 2017-10-06 |
| Genre | : Science |
| ISBN | : 1351858718 |
This book provides an overview of compound semiconductor materials and their technology. After presenting a theoretical background, it describes the relevant material preparation technologies for bulk and thin-layer epitaxial growth. It then briefly discusses the electrical, optical, and structural properties of semiconductors, complemented by a description of the most popular characterization tools, before more complex hetero- and low-dimensional structures are discussed. A special chapter is devoted to GaN and related materials, owing to their huge importance in modern optoelectronic and electronic devices, on the one hand, and their particular properties compared to other compound semiconductors, on the other. In the last part of the book, the physics and functionality of optoelectronic and electronic device structures (LEDs, laser diodes, solar cells, field-effect and heterojunction bipolar transistors) are discussed on the basis of the specific properties of compound semiconductors presented in the preceding chapters of the book. Compound semiconductors form the back-bone of all opto-electronic and electronic devices besides the classical Si electronics. Currently the most important field is solid state lighting with highly efficient LEDs emitting visible light. Also laser diodes of all wavelength ranges between mid-infrared and near ultraviolet have been the enabler for a huge number of unprecedented applications like CDs and DVDs for entertainment and data storage, not to speak about the internet, which would be impossible without optical data communications with infrared laser diodes as key elements. This book provides a concise overview over this class of materials, including the most important technological aspects for their fabrication and characterisation, also covering the most relevant devices based on compound semiconductors. It presents therefore an excellent introduction into this subject not only for students, but also for engineers and scientist who intend to put their focus on this field of science.
| Author | : Osamu Wada |
| Publisher | : Wiley-Interscience |
| Total Pages | : 616 |
| Release | : 1999-04-13 |
| Genre | : Science |
| ISBN | : |
A comprehensive guide to current techniques, applications, and trends in InP-based technologies. Introducing one of the hottest technologies in the semiconductor industry, this collection of articles by international leading experts covers the state of the art of indium phosphide (InP)-based materials and devices. From current industry practices to cutting-edge developments to promising research trends, each chapter describes a particular aspect of the technology, giving scientists and engineers the necessary information, including physical principles and technical know-how, to design, apply, and troubleshoot these high-performance, low-cost components for diverse systems-TDM and WDM optical systems or microwave and millimeter-wave systems. The advantages and challenges still to overcome of InP-based semiconductors as compared with the more mature GaAs technology are also thoroughly reviewed. Presented in an easy-to-understand tutorial style, with topics cross-referenced between chapters, InP-Based Materials and Devices features more than 1,500 references as well as 365 figures and tables. Key topics include: * Basic materials physics involved in a wide range of InP-based compounds. * Growth of high-purity bulk and heterostructure epitaxy, including MOCVD, MBE, and GS-MBE. * Hetero-interface control and dry process techniques for device fabrication. * High-performance heterojunction-FETs and HEMTs as well as HBTs for high-speed IC and MMIC applications. * Lasers, amplifiers, and modulators as well as photodiodes and receivers for high-speed and WDM networks. * Optoelectronic integration and packing for functional, low-cost modules.
