Physical Principles Involved in Transistor Action

Physical Principles Involved in Transistor Action
Author: J and Brattain W H Bardeen
Publisher: Hassell Street Press
Total Pages: 22
Release: 2021-09-09
Genre:
ISBN: 9781014604033

This work has been selected by scholars as being culturally important and is part of the knowledge base of civilization as we know it. This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. To ensure a quality reading experience, this work has been proofread and republished using a format that seamlessly blends the original graphical elements with text in an easy-to-read typeface. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.

Transistors

Transistors
Author: E. J. M. Kendall
Publisher: Elsevier
Total Pages: 341
Release: 2016-06-23
Genre: Science
ISBN: 148313850X

Transistors reviews major advances that have been made with respect to transistors and illustrates some of the many facets of transistor research and development. Topics covered range from point contact devices and junction devices to p-n junctions in semiconductors, unipolar and analog transistors, and hole injection in transistor action. The physical principles involved in transistor action are also discussed, along with the nature of the forward current in germanium point contacts. This book is comprised of 19 papers and begins with a summary of the semiconductor physics pertinent to the understanding of transistors. The reader is then introduced to developments in point contact devices and junction devices; how the conductance of thin films of semiconductors is modulated by surface charges; the relation between surface states and rectification at a metal-semiconductor contact; and a three-element electronic device that utilizes a semiconductor as the basic element. The remaining papers focus on p-n junction transistors; the theory of alpha for p-n-p diffused junction transistors; and unipolar and analog transistors. The effects of electrical forming on the rectifying barriers of n- and p-germanium transistors are also analyzed. The final chapter describes a thin-film transistor fabricated by evaporation of all components onto an insulating substrate. This monograph will be of interest to physicists and electronics engineers.

The Physics of Microfabrication

The Physics of Microfabrication
Author: Ivor Brodie
Publisher: Springer Science & Business Media
Total Pages: 518
Release: 2013-11-11
Genre: Technology & Engineering
ISBN: 1489921605

The Physical Electronics Department of SRI International (formerly Stanford Research Institute) has been pioneering the development of devices fabricated to submicron tolerances for well over 20 years. In 1961, a landmark paper on electron-beam lithography and its associated technologies was published by K. R. Shoulderst (then at SRI), which set the stage for our subsequent efforts in this field. He had the foresight to believe that the building of such small devices was actually within the range of human capabilities. As a result of this initial momentum, our experience in the technologies associated with microfabrication has become remarkably comprehensive, despite the relatively small size of our research activity. We have frequently been asked to deliver seminars or provide reviews on various aspects of micro fabrication. These activities made us aware of the need for a comprehensive overview of the physics of microfabrication. We hope that this book will fill that need.

The Physics of Semiconductors

The Physics of Semiconductors
Author: Marius Grundmann
Publisher: Springer
Total Pages: 998
Release: 2015-12-24
Genre: Technology & Engineering
ISBN: 3319238809

The 3rd edition of this successful textbook contains ample material for a comprehensive upper-level undergraduate or beginning graduate course, guiding readers to the point where they can choose a special topic and begin supervised research. The textbook provides a balance between essential aspects of solid-state and semiconductor physics, on the one hand, and the principles of various semiconductor devices and their applications in electronic and photonic devices, on the other. It highlights many practical aspects of semiconductors such as alloys, strain, heterostructures, nanostructures, that are necessary in modern semiconductor research but typically omitted in textbooks. Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. The text derives explicit formulas for many results to support better understanding of the topics. The Physics of Semiconductors requires little or no prior knowledge of solid-state physics and evolved from a highly regarded two-semester course. In the third edition several topics are extended and treated in more depth including surfaces, disordered materials, amorphous semiconductors, polarons, thermopower and noise. More than 1800 references guide the reader to historic and current literature including original and review papers and books.

Properties and Applications of Transistors

Properties and Applications of Transistors
Author: J. P. Vasseur
Publisher: Elsevier
Total Pages: 473
Release: 2016-06-06
Genre: Technology & Engineering
ISBN: 1483138887

Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.

Physics and Chemistry of III-V Compound Semiconductor Interfaces

Physics and Chemistry of III-V Compound Semiconductor Interfaces
Author: Carl Wilmsen
Publisher: Springer Science & Business Media
Total Pages: 472
Release: 2013-06-29
Genre: Science
ISBN: 1468448358

The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.

The Physics of Micro/Nano-Fabrication

The Physics of Micro/Nano-Fabrication
Author: Ivor Brodie
Publisher: Springer Science & Business Media
Total Pages: 661
Release: 2013-06-29
Genre: Science
ISBN: 1475767757

In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.