Physical Principles and Applications of Junction Transistors
| Author | : John Hamilton Simpson |
| Publisher | : Oxford : Clarendon Press |
| Total Pages | : 544 |
| Release | : 1962 |
| Genre | : Junction transistors |
| ISBN | : |
Physical Principles And Applications Of Junction Transistors
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Transistors
| Author | : E. J. M. Kendall |
| Publisher | : Elsevier |
| Total Pages | : 341 |
| Release | : 2016-06-23 |
| Genre | : Science |
| ISBN | : 148313850X |
Transistors reviews major advances that have been made with respect to transistors and illustrates some of the many facets of transistor research and development. Topics covered range from point contact devices and junction devices to p-n junctions in semiconductors, unipolar and analog transistors, and hole injection in transistor action. The physical principles involved in transistor action are also discussed, along with the nature of the forward current in germanium point contacts. This book is comprised of 19 papers and begins with a summary of the semiconductor physics pertinent to the understanding of transistors. The reader is then introduced to developments in point contact devices and junction devices; how the conductance of thin films of semiconductors is modulated by surface charges; the relation between surface states and rectification at a metal-semiconductor contact; and a three-element electronic device that utilizes a semiconductor as the basic element. The remaining papers focus on p-n junction transistors; the theory of alpha for p-n-p diffused junction transistors; and unipolar and analog transistors. The effects of electrical forming on the rectifying barriers of n- and p-germanium transistors are also analyzed. The final chapter describes a thin-film transistor fabricated by evaporation of all components onto an insulating substrate. This monograph will be of interest to physicists and electronics engineers.
Properties and Applications of Transistors
| Author | : J. P. Vasseur |
| Publisher | : Elsevier |
| Total Pages | : 473 |
| Release | : 2016-06-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1483138887 |
Properties and Applications of Transistors focuses on the evolution of transistors as one of the essential elements of modern electronics. The book first provides information on the physical principles of transistors, including conductivity of semiconductors, junction transistors, and transistor technology. The text also looks at the general discussion of linear two-ports. Topics include equivalent circuits for a two-port; relations between the two-ports corresponding to the possible methods of connection of transistors; and elements of matrix algebra. The selection also highlights the capabilities of transistors as linear-amplifiers. The stability and neutralization of transistors; measurement of power gain; transistors with complex base resistance; and point contact transistors at low frequencies are discussed. The text also looks at the maximum ratings of transistors, including maximum voltage and current, cooling by natural convection, and thermal runaway. The book is a vital reference for readers wanting to study transistors.
Nanowire Field Effect Transistors: Principles and Applications
| Author | : Dae Mann Kim |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 292 |
| Release | : 2013-10-23 |
| Genre | : Technology & Engineering |
| ISBN | : 1461481244 |
“Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.
SiGe Heterojunction Bipolar Transistors
| Author | : Peter Ashburn |
| Publisher | : John Wiley & Sons |
| Total Pages | : 286 |
| Release | : 2004-02-06 |
| Genre | : Technology & Engineering |
| ISBN | : 0470090731 |
SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Junction Transistors
| Author | : John. J. Sparkes |
| Publisher | : Elsevier |
| Total Pages | : 261 |
| Release | : 2016-05-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1483149072 |
Junction Transistors explains the operation and characterization of junction transistors to a point from which detailed circuit analysis and design can be undertaken. This book highlights three features. First, this text analyzes the behavior of semiconductors, pn junctions, and all types of bipolar transistors from the standpoint of classical physics. The validity of this approach and the link with quantum physics is discussed in an appendix. Second, the high-speed operation of transistors is analyzed and explained in terms of base charge. Finally, the analysis of transistor behavior in terms of the movements of holes and electrons can only be carried out explicitly with the aid of simplifying assumptions, not all of which can be fully justified. In this selection, an attempt has been made to justify these assumptions wherever possible, to show where they break down, and to remove the assumptions altogether in one or two instances and obtain more rigorous solutions. This publication provides material of interest not only to undergraduates but also to those more familiar with the properties and use of transistors.
Physics of High-Speed Transistors
| Author | : Juras Pozela |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 351 |
| Release | : 2013-06-29 |
| Genre | : Science |
| ISBN | : 1489912428 |
This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Course Notes for EE 401, Fundamental Physical Properties of Transistors, and Pulse and Switching Applications
| Author | : University of Michigan. Department of Electrical Engineering |
| Publisher | : |
| Total Pages | : 374 |
| Release | : 1955 |
| Genre | : Transistors |
| ISBN | : |
