Radiation effects on Metal-Oxide-Silicon Field Effect Transistors are studied. A brief history of development, theory of operation and survey of previous radiation effect work is given. Previous work points to a charge buildup in the oxide layer and a possible increase in fast surface state density as being the causes of semi-permanent degradation. Experimental work was done using a FI 100 p-channel MOSFET to determine the feasibility of studying radiation effects using available equipment at the Naval Postgraduate School. It was found that the study of charge buildup is feasible. Data obtained agreed qualitatively with previous results. Thermal annealing of a device after irradiation reduced the semi-permanent degradation significantly as is seen in previous work. Transient photocurrents produced in the oxide layer were examined and problems were revealed which must be solved before such work will become meaningful. Package and charge scattering effects may be masking the real effects. Suggestions for future work are included. (Author).