Optical Characterization Of Inassb Based Quantum Structures For Novel Mid Infrared Light Emitting Diodes
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Author | : Anthony Krier |
Publisher | : Springer |
Total Pages | : 756 |
Release | : 2007-05-22 |
Genre | : Science |
ISBN | : 1846282098 |
Optoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.
Author | : |
Publisher | : |
Total Pages | : 980 |
Release | : 1998 |
Genre | : Aeronautics |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 704 |
Release | : 1995 |
Genre | : Aeronautics |
ISBN | : |
Author | : J.P. Hirtz |
Publisher | : Elsevier |
Total Pages | : 365 |
Release | : 2016-07-29 |
Genre | : Science |
ISBN | : 1483290425 |
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.
Author | : Simas Rackauskas |
Publisher | : BoD – Books on Demand |
Total Pages | : 122 |
Release | : 2019-04-10 |
Genre | : Technology & Engineering |
ISBN | : 1789859050 |
Nanowires are attracting wide scientific interest due to the unique properties associated with their one-dimensional geometry. Developments in the understanding of the fundamental principles of the nanowire growth mechanisms and mastering functionalization provide tools to control crystal structure, morphology, and the interactions at the material interface, and create characteristics that are superior to those of planar geometries. This book provides a comprehensive overview of the most important developments in the field of nanowires, starting from their synthesis, discussing properties, and finalizing with nanowire applications. The book consists of two parts: the first is devoted to the synthesis of nanowires and characterization, and the second investigates the properties of nanowires and their applications in future devices.
Author | : |
Publisher | : |
Total Pages | : 2240 |
Release | : 1997 |
Genre | : Electrical engineering |
ISBN | : |
Author | : Mohamed Henini |
Publisher | : Elsevier |
Total Pages | : 790 |
Release | : 2018-06-27 |
Genre | : Science |
ISBN | : 0128121378 |
Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author | : |
Publisher | : |
Total Pages | : 2668 |
Release | : 2002 |
Genre | : Chemistry |
ISBN | : |
Author | : Huade Walter Yao |
Publisher | : SPIE-International Society for Optical Engineering |
Total Pages | : 232 |
Release | : 2004 |
Genre | : Technology & Engineering |
ISBN | : |
Proceedings of SPIE present the original research papers presented at SPIE conferences and other high-quality conferences in the broad-ranging fields of optics and photonics. These books provide prompt access to the latest innovations in research and technology in their respective fields. Proceedings of SPIE are among the most cited references in patent literature.
Author | : |
Publisher | : Academic Press |
Total Pages | : 495 |
Release | : 2000-11-07 |
Genre | : Science |
ISBN | : 0080542948 |
Frontiers of Thin Film Technology, Volume 28 focuses on recent developments in those technologies that are critical to the successful growth, fabrication, and characterization of newly emerging solid-state thin film device architectures. Volume 28 is a condensed sampler of the Handbook for use by professional scientists, engineers, and students involved in the materials, design, fabrication, diagnostics, and measurement aspects of these important new devices.