Narrow Gap Semiconductors And Related Materials
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Narrow-Gap Semiconductors
Author | : |
Publisher | : Springer |
Total Pages | : 317 |
Release | : 2006-04-11 |
Genre | : Technology & Engineering |
ISBN | : 3540395318 |
Narrow-gap Semiconductor Photodiodes
Author | : Antoni Rogalski |
Publisher | : SPIE Press |
Total Pages | : 464 |
Release | : 2000 |
Genre | : Science |
ISBN | : 9780819436191 |
In this monograph, investigations of the performance of narrow-gap semiconductor photodiodes are presented, and recent progress in different IR photodiode technologies is discussed: HgCdTe photodiodes, InSb photodiodes, alternatives to HgCdTe III-V and II-VI ternary alloy photodiodes, lead chalcogenide photodiodes, and a new class of photodiodes based on two-dimensional solids. Investigations of the performance of photodiodes operated in different spectral regions are presented.
Device Physics of Narrow Gap Semiconductors
Author | : Junhao Chu |
Publisher | : Springer Science & Business Media |
Total Pages | : 676 |
Release | : 2009-10-13 |
Genre | : Technology & Engineering |
ISBN | : 1441910409 |
Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.
Narrow Gap Semiconductors
Author | : Junichiro Kono |
Publisher | : CRC Press |
Total Pages | : 636 |
Release | : 2006-05-25 |
Genre | : Science |
ISBN | : 148226921X |
This volume forms a solid presentation in several important areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. It examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe. Several chapters cover carbon nanotubes and spintronics, along with spin-orbit coupling, nonparabolicity, and large g-factors. The book also deals with the physics and applications of low-energy phenomena at the infrared and terahertz ranges.
Physics and Properties of Narrow Gap Semiconductors
Author | : Junhao Chu |
Publisher | : Springer Science & Business Media |
Total Pages | : 613 |
Release | : 2007-11-21 |
Genre | : Science |
ISBN | : 0387748016 |
Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
The Materials Science of Semiconductors
Author | : Angus Rockett |
Publisher | : Springer Science & Business Media |
Total Pages | : 629 |
Release | : 2007-11-20 |
Genre | : Technology & Engineering |
ISBN | : 0387686509 |
This book describes semiconductors from a materials science perspective rather than from condensed matter physics or electrical engineering viewpoints. It includes discussion of current approaches to organic materials for electronic devices. It further describes the fundamental aspects of thin film nucleation and growth, and the most common physical and chemical vapor deposition techniques. Examples of the application of the concepts in each chapter to specific problems or situations are included, along with recommended readings and homework problems.
Narrow Gap Semiconductors 1995
Author | : J.L Reno |
Publisher | : CRC Press |
Total Pages | : 408 |
Release | : 2020-11-26 |
Genre | : Science |
ISBN | : 1000157210 |
Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.
Narrow Gap Semiconductors - Proceedings Of The Eighth International Conference
Author | : Sue-chu Shen |
Publisher | : World Scientific |
Total Pages | : 494 |
Release | : 1998-04-09 |
Genre | : |
ISBN | : 9814545325 |
Contents:Materials and Related Physics: Magnetic Field and Dimensionality Induced Population Effects in HgSe and HgSe:Fe (O Portugall et al)Growth and in Situ Scanning Tunneling Microscopy Studies of IV–VI Semiconductors (Abstract) (G Springholz)Detectors and Arrays: China's Satellite Project for Earth Observation and Infrared Detection (D-B Kuang)Recent Progress in Quantum Well Infrared Photodetectors and Focal Plane Arrays for LWIR Imaging Applications (S S Li)Infrared Lasers: Mid-Infrared Resonant-Cavity-Based Devices: Of Detectors and Emitters (J Bleuse et al)W Lasers for the Mid-IR (J R Meyer et al)Devices and Related Physics: Optoelectronic Devices from Indium Aluminium Antimonide and Mercury Cadmium Telluride (T Ashley)Three-Terminal Superconductor–Semiconductor Devices (H Takayanagi & T Akazaki)Physics: Coherent Anti-Stokes Raman Scattering in Diluted Magnetic IV–VI Epilayers and Superlattices (H Pascher et al)High Field Cyclotron Resonance in GaSb and Effective Mass at the Γ and L-Points (H Arimoto et al)Quantum Dots: Growth and Characterization of InAs Quantum Dots (N N Ledentsov)Self-Assembled InAs Quantum Boxes: Growth, Intrinsic Properties, Potential Applications (Abstract) (J M Gérard)and other papers Readership: Researchers in the field of semiconductors.
SiC, Natural and Synthetic Diamond and Related Materials
Author | : A.A. Gippius |
Publisher | : Elsevier |
Total Pages | : 392 |
Release | : 1992-04-24 |
Genre | : Science |
ISBN | : 0444596771 |
This volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.