Low Temperature Metal Induced Laterally Crystallized Polysilicon Thin Film Transistors for AMLCD Applications
| Author | : Gururaj A. Bhat |
| Publisher | : |
| Total Pages | : 182 |
| Release | : 1998 |
| Genre | : Liquid crystal display |
| ISBN | : |
Low Temperature Metal Induced Laterally Crystallized Polysilicon Thin Film Transistors For Amlcd Applications
Download Low Temperature Metal Induced Laterally Crystallized Polysilicon Thin Film Transistors For Amlcd Applications full books in PDF, epub, and Kindle. Read online free Low Temperature Metal Induced Laterally Crystallized Polysilicon Thin Film Transistors For Amlcd Applications ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Thin Film Transistors: Polycrystalline silicon thin film transistors
| Author | : Yue Kuo |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 528 |
| Release | : 2004 |
| Genre | : Thin film transistors |
| ISBN | : 9781402075063 |
This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.
Metal-induced Unilaterally Crystallized Polycrystalline Silicon Thin-film Transistor Technology and Application to Flat-panel Displays
| Author | : |
| Publisher | : |
| Total Pages | : |
| Release | : |
| Genre | : |
| ISBN | : |
HKUST Call Number: Thesis ELEC 2002 Meng.
Modeling of Polysilicon Thin-film Transistors Formed by Grain Enhancement Technology-metal-induced Lateral Crystallization
| Author | : Chun Fai Cheng |
| Publisher | : |
| Total Pages | : 330 |
| Release | : 2004 |
| Genre | : Crystallization |
| ISBN | : |
Thin Film Transistor Technologies V
| Author | : Yue Kuo |
| Publisher | : The Electrochemical Society |
| Total Pages | : 356 |
| Release | : 2001 |
| Genre | : Technology & Engineering |
| ISBN | : 9781566772983 |
Thin-Film Transistors
| Author | : Cherie R. Kagan |
| Publisher | : CRC Press |
| Total Pages | : 543 |
| Release | : 2003-02-25 |
| Genre | : Technology & Engineering |
| ISBN | : 0203911776 |
This is a single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays. It evaluates the preparation of polycrystallin
Metal Induced Crystallization and Polysilicon Thin Film Transistors
| Author | : Bo Zhang |
| Publisher | : |
| Total Pages | : 84 |
| Release | : 2009-05-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9783639158281 |
Nowadays,active-matrix addressing using a-Si TFTs is dominating in the flat panel display markets. However, low temperature polysilicon has been proposed and considered to be a promising alternative technology. Metal induced crystallization (MIe is one of the methods to obtain high quality polysilicon films at low temperatures. A few technologies are presented in this monograph, which improve the quality of MIC polysilicon film and hence the performance of TFTs built on. Amelioration of MIC processes has been made to produce high performance polysilicon TFTs using solution based MIC (SMIe and defined-grain MIC (DG-MIe methods. Novel post-annealing technologies are also introduced to reduce the micro-defects in MIC polysilicon film and hence to achieve better performance. These technologies include YAG laser post-annealing and flash lamp post-annealing. Particularly, it is the first time to report the application of flash lamp annealing technology in the fabrication of low temperature polysilicon and TFTs.
A Novel Device Structure for Low-Temperature Polysilicon TFTs With Controlled Gain Growth in Channel Regions
| Author | : Li-Jung Cheng |
| Publisher | : |
| Total Pages | : 4 |
| Release | : 2000 |
| Genre | : |
| ISBN | : |
In this paper we demonstrate a novel device structure of low-temperature polysilicon thin-film transistors (LTPS TFTs) for AMLCD applications with using excimer-laser crystallization (ELC). The device structure consists of a thin channel and a thick source/drain. This structure has its merit in the process of ELC and is capable of improving TFTs electrical characteristics. During excimer laser irradiation this kind of recessed structure is able to build up localized lateral thermal gradients in the regions near the steps and entice crystallization from the chiller/thick source/drain regions toward the hotter thin channels. Because of the development of crystallization process, the average field-effect mobility of the devices can be increased to about 350 cm(2)/V.s, and the on/off current ratios exceed eight orders. In addition to improvement of device performance, the process window of ELC is broadened with the recessed structure.
