Low Field Electron Transport Calculation For Compound Semiconductors
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Author | : B.R. Nag |
Publisher | : Springer Science & Business Media |
Total Pages | : 476 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 3642814166 |
Discovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Author | : H Sakaki |
Publisher | : CRC Press |
Total Pages | : 931 |
Release | : 2021-02-01 |
Genre | : Science |
ISBN | : 1000157148 |
Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Author | : M.S. Shur |
Publisher | : CRC Press |
Total Pages | : 1087 |
Release | : 2020-10-28 |
Genre | : Science |
ISBN | : 1000112314 |
Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.
Author | : Sadao Adachi |
Publisher | : John Wiley & Sons |
Total Pages | : 342 |
Release | : 1992-11-10 |
Genre | : Science |
ISBN | : 9780471573296 |
The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Author | : P. C. Chang |
Publisher | : The Electrochemical Society |
Total Pages | : 180 |
Release | : 2001 |
Genre | : Technology & Engineering |
ISBN | : 9781566773539 |
Author | : |
Publisher | : Allied Publishers |
Total Pages | : 698 |
Release | : 1998 |
Genre | : Digital communications |
ISBN | : 9788170237679 |
Author | : Chua Soo-Jin |
Publisher | : CRC Press |
Total Pages | : 297 |
Release | : 2020-03-26 |
Genre | : Science |
ISBN | : 1000083195 |
This proceeding is a collection of selected papers presented at Symposium O of Compound Semiconductor Photonics in the International Conference on Materials for Advanced Technology (ICMAT), which was held in Singapore from 28 June to 3 July 2009. The symposium covers a wide range of topics from fundamental semiconductor materials study to photonic device fabrication and application. The papers collected are of recent progress in the active and wide range of semiconductor photonics research. They include materials-related papers on III-As/P, III-nitride, quantum dot/wire/dash growth, ZnO, and chalcogenide, and devices-related papers on photonic crystals, VCSEL, quantum dot/dash lasers, LEDs, waveguides, solar cells and heterogeneous integrat
Author | : C. R. Abernathy |
Publisher | : The Electrochemical Society |
Total Pages | : 278 |
Release | : 1999 |
Genre | : Technology & Engineering |
ISBN | : 9781566772266 |
Author | : Tingkai Li |
Publisher | : CRC Press |
Total Pages | : 588 |
Release | : 2016-04-19 |
Genre | : Science |
ISBN | : 1439815232 |
Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more
Author | : Joachim Piprek |
Publisher | : John Wiley & Sons |
Total Pages | : 519 |
Release | : 2007-06-27 |
Genre | : Technology & Engineering |
ISBN | : 3527610715 |
This is the first book to be published on physical principles, mathematical models, and practical simulation of GaN-based devices. Gallium nitride and its related compounds enable the fabrication of highly efficient light-emitting diodes and lasers for a broad spectrum of wavelengths, ranging from red through yellow and green to blue and ultraviolet. Since the breakthrough demonstration of blue laser diodes by Shuji Nakamura in 1995, this field has experienced tremendous growth worldwide. Various applications can be seen in our everyday life, from green traffic lights to full-color outdoor displays to high-definition DVD players. In recent years, nitride device modeling and simulation has gained importance and advanced software tools are emerging. Similar developments occurred in the past with other semiconductors such as silicon, where computer simulation is now an integral part of device development and fabrication. This book presents a review of modern device concepts and models, written by leading researchers in the field. It is intended for scientists and device engineers who are interested in employing computer simulation for nitride device design and analysis.