Light Induced Defects In Semiconductors
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Author | : Kazuo Morigaki |
Publisher | : CRC Press |
Total Pages | : 207 |
Release | : 2014-09-13 |
Genre | : Science |
ISBN | : 9814411493 |
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related mate
Author | : Alexander V. Kolobov |
Publisher | : John Wiley & Sons |
Total Pages | : 436 |
Release | : 2006-12-13 |
Genre | : Science |
ISBN | : 3527608664 |
A review summarising the current state of research in the field, bridging the gaps in the existing literature. All the chapters are written by world leaders in research and development and guide readers through the details of photo-induced metastability and the results of the latest experiments and simulations not found in standard monographs on this topic. A useful reference not only for graduates but also for scientific and industrial researchers. With a foreword of Kazunobu Tanaka
Author | : David Redfield |
Publisher | : Cambridge University Press |
Total Pages | : 231 |
Release | : 1996-01-26 |
Genre | : Science |
ISBN | : 0521461960 |
A thorough review of the properties of deep-level, localized defects in semiconductors.
Author | : Kazuo Morigaki |
Publisher | : CRC Press |
Total Pages | : 213 |
Release | : 2014-09-13 |
Genre | : Science |
ISBN | : 9814411485 |
This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.
Author | : Keiichiro Nasu |
Publisher | : Springer Science & Business Media |
Total Pages | : 279 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 3642607020 |
Message from The Taniguchi Foundation Dr. Kanamori, Distinguished Guests and Friends: The Taniguchi Foundation wishes to welcome the participants of the nine teenth International Symposium on the Theory of Condensed Matter, who have come from within this country and from different parts of the world. The concept of the symposium is unique in that participants, both Japanese and from abroad, are limited in number to small discussion groups, and live together, although for a short period, as a close-knit community. We feel that this kind of environment will assist towards the strengthening of understanding and the fostering of friendship among the attendees. It is easy to talk about, but difficult to realize, the ideal of international friendship and understanding in a world which is steadily growing smaller. So far, the Foundation has invited a total of 149 participants in this division from 24 foreign countries and 299 participants from Japan. And we are all friends. We hope and trust that even after they have reached the heights of academic fame during the coming decades, the participants will continue to join forces and help to forge closer bonds of friendship and cooperation that will make major contributions not only to academia, but also towards world peace and the welfare of mankind. We hope that all the participants will return home with warm memories of both this symposium and the pleasant times that we have shared. Thank you.
Author | : David J Lockwood |
Publisher | : World Scientific |
Total Pages | : 2858 |
Release | : 1995-01-20 |
Genre | : |
ISBN | : 9814550159 |
These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Author | : Kazuo Morigaki |
Publisher | : John Wiley & Sons |
Total Pages | : 290 |
Release | : 2016-12-29 |
Genre | : Technology & Engineering |
ISBN | : 1118757947 |
Amorphous semiconductors are subtances in the amorphous solid state that have the properties of a semiconductor and which are either covalent or tetrahedrally bonded amorphous semiconductors or chelcogenide glasses. Developed from both a theoretical and experimental viewpoint Deals with, amongst others, preparation techniques, structural, optical and electronic properties, and light induced phenomena Explores different types of amorphous semiconductors including amorphous silicon, amorphous semiconducting oxides and chalcogenide glasses Applications include solar cells, thin film transistors, sensors, optical memory devices and flat screen devices including televisions
Author | : |
Publisher | : Academic Press |
Total Pages | : 453 |
Release | : 1984-10-01 |
Genre | : Technology & Engineering |
ISBN | : 0080864139 |
Semiconductors and Semimetals
Author | : David A. Drabold |
Publisher | : Springer Science & Business Media |
Total Pages | : 320 |
Release | : 2007 |
Genre | : Science |
ISBN | : |
Semiconductor science and technology is the art of defect engineering. The theoretical modeling of defects has improved dramatically over the past decade. These tools are now applied to a wide range of materials issues: quantum dots, buckyballs, spintronics, interfaces, amorphous systems, and many others. This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. Today's state-of-the-art, as well as tomorrow’s tools, are discussed: the supercell-pseudopotential method, the GW formalism,Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments, etc. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Author | : Parmod Kumar |
Publisher | : Elsevier |
Total Pages | : 738 |
Release | : 2023-05-26 |
Genre | : Technology & Engineering |
ISBN | : 0323909086 |
Defect-Induced Magnetism in Oxide Semiconductors provides an overview of the latest advances in defect engineering to create new magnetic materials and enable new technological applications. First, the book introduces the mechanisms, behavior, and theory of magnetism in oxide semiconductors and reviews the methods of inducing magnetism in these materials. Then, strategies such as pulsed laser deposition and RF sputtering to grow oxide nanostructured materials with induced magnetism are discussed. This is followed by a review of the most relevant postdeposition methods to induce magnetism in oxide semiconductors including annealing, ion irradiation, and ion implantation. Examples of defect-induced magnetism in oxide semiconductors are provided along with selected applications. This book is a suitable reference for academic researchers and practitioners and for people engaged in research and development in the disciplines of materials science and engineering. - Reviews the magnetic, electrical, dielectric and optical properties of oxide semiconductors with defect-induced magnetism - Discusses growth and post-deposition strategies to grow oxide nanostructured materials such as oxide thin films with defect-induced magnetism - Provides examples of materials with defect-induced magnetism such as zinc oxide, cerium dioxide, hafnium dioxide, and more