Ionizing Radiation Effects In Mos Oxides
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Author | : Timothy R Oldham |
Publisher | : World Scientific |
Total Pages | : 190 |
Release | : 2000-01-25 |
Genre | : Science |
ISBN | : 9814496685 |
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Author | : T. P. Ma |
Publisher | : John Wiley & Sons |
Total Pages | : 616 |
Release | : 1989-04-18 |
Genre | : Technology & Engineering |
ISBN | : 9780471848936 |
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Author | : Krzysztof Iniewski |
Publisher | : CRC Press |
Total Pages | : 432 |
Release | : 2018-09-03 |
Genre | : Technology & Engineering |
ISBN | : 1439826951 |
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Author | : Ronald D Schrimpf |
Publisher | : World Scientific |
Total Pages | : 349 |
Release | : 2004-07-29 |
Genre | : Technology & Engineering |
ISBN | : 9814482153 |
This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metal-oxide-semiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level.
Author | : C. Claeys |
Publisher | : Springer Science & Business Media |
Total Pages | : 424 |
Release | : 2013-11-11 |
Genre | : Science |
ISBN | : 3662049740 |
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author | : Daniel M. Fleetwood |
Publisher | : CRC Press |
Total Pages | : 772 |
Release | : 2008-11-19 |
Genre | : Science |
ISBN | : 1420043773 |
Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe
Author | : |
Publisher | : |
Total Pages | : 840 |
Release | : 1990 |
Genre | : Power resources |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 848 |
Release | : 1989 |
Genre | : Power resources |
ISBN | : |
Author | : Boris Ildusovich Kharisov |
Publisher | : CRC Press |
Total Pages | : 586 |
Release | : 2016-04-19 |
Genre | : Science |
ISBN | : 1466505230 |
Researchers and engineers working in nuclear laboratories, nuclear electric plants, and elsewhere in the radiochemical industries need a comprehensive handbook describing all possible radiation-chemistry interactions between irradiation and materials, the preparation of materials under distinct radiation types, the possibility of damage of material
Author | : Wieland Fischer |
Publisher | : Springer |
Total Pages | : 709 |
Release | : 2017-09-18 |
Genre | : Computers |
ISBN | : 3319667874 |
This book constitutes the proceedings of the 19th International Conference on Cryptographic Hardware and Embedded Systems, CHES 2017, held in Taipei, Taiwan, in September 2017. The 33 full papers presented in this volume were carefully reviewed and selected from 130 submissions. The annual CHES conference highlights new results in the design and analysis of cryptographic hardware and soft- ware implementations. The workshop builds a valuable bridge between the research and cryptographic engineering communities and attracts participants from industry, academia, and government organizations.