Ionizing Radiation Effects In Mos Devices And Circuits
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Author | : T. P. Ma |
Publisher | : John Wiley & Sons |
Total Pages | : 616 |
Release | : 1989-04-18 |
Genre | : Technology & Engineering |
ISBN | : 9780471848936 |
The first comprehensive overview describing the effects of ionizing radiation on MOS devices, as well as how to design, fabricate, and test integrated circuits intended for use in a radiation environment. Also addresses process-induced radiation effects in the fabrication of high-density circuits. Reviews the history of radiation-hard technology, providing background information for those new to the field. Includes a comprehensive review of the literature and an annotated listing of research activities in radiation-hardness research.
Author | : Krzysztof Iniewski |
Publisher | : CRC Press |
Total Pages | : 432 |
Release | : 2018-09-03 |
Genre | : Technology & Engineering |
ISBN | : 1439826951 |
Space applications, nuclear physics, military operations, medical imaging, and especially electronics (modern silicon processing) are obvious fields in which radiation damage can have serious consequences, i.e., degradation of MOS devices and circuits. Zeroing in on vital aspects of this broad and complex topic, Radiation Effects in Semiconductors addresses the ever-growing need for a clear understanding of radiation effects on semiconductor devices and circuits to combat potential damage it can cause. Features a chapter authored by renowned radiation authority Lawrence T. Clark on Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation This book analyzes the radiation problem, focusing on the most important aspects required for comprehending the degrading effects observed in semiconductor devices, circuits, and systems when they are irradiated. It explores how radiation interacts with solid materials, providing a detailed analysis of three ways this occurs: Photoelectric effect, Compton effect, and creation of electron-positron pairs. The author explains that the probability of these three effects occurring depends on the energy of the incident photon and the atomic number of the target. The book also discusses the effects that photons can have on matter—in terms of ionization effects and nuclear displacement Written for post-graduate researchers, semiconductor engineers, and nuclear and space engineers with some electronics background, this carefully constructed reference explains how ionizing radiation is creating damage in semiconducting devices and circuits and systems—and how that damage can be avoided in areas such as military/space missions, nuclear applications, plasma damage, and X-ray-based techniques. It features top-notch international experts in industry and academia who address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches.
Author | : Timothy R. Oldham |
Publisher | : World Scientific |
Total Pages | : 192 |
Release | : 1999 |
Genre | : Technology & Engineering |
ISBN | : 9789810233266 |
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Author | : George Messenger |
Publisher | : Springer |
Total Pages | : 587 |
Release | : 2014-04-20 |
Genre | : Science |
ISBN | : 9789401753579 |
Author | : Krzysztof Iniewski |
Publisher | : CRC Press |
Total Pages | : 384 |
Release | : 2018-09-03 |
Genre | : Medical |
ISBN | : 1439858845 |
There is a growing need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Assessing the billion-dollar market for detection equipment in the context of medical imaging using ionizing radiation, Electronics for Radiation Detection presents valuable information that will help integrated circuit (IC) designers and other electronics professionals take full advantage of the tremendous developments and opportunities associated with this burgeoning field. Assembling contributions from industrial and academic experts, this book— Addresses the state of the art in the design of semiconductor detectors, integrated circuits, and other electronics used in radiation detection Analyzes the main effects of radiation in semiconductor devices and circuits, paying special attention to degradation observed in MOS devices and circuits when they are irradiated Explains how circuits are built to deal with radiation, focusing on practical information about how they are being used, rather than mathematical details Radiation detection is critical in space applications, nuclear physics, semiconductor processing, and medical imaging, as well as security, drug development, and modern silicon processing techniques. The authors discuss new opportunities in these fields and address emerging detector technologies, circuit design techniques, new materials, and innovative system approaches. Aimed at postgraduate researchers and practicing engineers, this book is a must for those serious about improving their understanding of electronics used in radiation detection. The information presented here can help you make optimal use of electronic detection equipment and stimulate further interest in its development, use, and benefits.
Author | : Paul Leroux |
Publisher | : MDPI |
Total Pages | : 210 |
Release | : 2019-08-26 |
Genre | : Technology & Engineering |
ISBN | : 3039212796 |
Research on radiation-tolerant electronics has increased rapidly over the past few years, resulting in many interesting approaches to modeling radiation effects and designing radiation-hardened integrated circuits and embedded systems. This research is strongly driven by the growing need for radiation-hardened electronics for space applications, high-energy physics experiments such as those on the Large Hadron Collider at CERN, and many terrestrial nuclear applications including nuclear energy and nuclear safety. With the progressive scaling of integrated circuit technologies and the growing complexity of electronic systems, their susceptibility to ionizing radiation has raised many exciting challenges, which are expected to drive research in the coming decade. In this book we highlight recent breakthroughs in the study of radiation effects in advanced semiconductor devices, as well as in high-performance analog, mixed signal, RF, and digital integrated circuits. We also focus on advances in embedded radiation hardening in both FPGA and microcontroller systems and apply radiation-hardened embedded systems for cryptography and image processing, targeting space applications.
Author | : Raoul Velazco |
Publisher | : Springer Science & Business Media |
Total Pages | : 273 |
Release | : 2007-06-19 |
Genre | : Technology & Engineering |
ISBN | : 140205646X |
This volume provides an extensive overview of radiation effects on integrated circuits, offering major guidelines for coping with radiation effects on components. It contains a set of chapters based on the tutorials presented at the International School on Effects of Radiation on Embedded Systems for Space Applications (SERESSA) that was held in Manaus, Brazil, November 20-25, 2005.
Author | : C. Claeys |
Publisher | : Springer Science & Business Media |
Total Pages | : 424 |
Release | : 2013-11-11 |
Genre | : Science |
ISBN | : 3662049740 |
This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Author | : Timothy R Oldham |
Publisher | : World Scientific |
Total Pages | : 190 |
Release | : 2000-01-25 |
Genre | : Science |
ISBN | : 9814496685 |
This volume is intended to serve as an updated critical guide to the extensive literature on the basic physical mechanisms controlling the radiation and reliability responses of MOS oxides. The last such guide was Ionizing Radiation Effects in MOS Devices and Circuits, edited by Ma and Dressendorfer and published in 1989. While that book remains an authoritative reference in many areas, there has been a significant amount of more recent work on the nature of the electrically active defects in MOS oxides which are generated by exposure to ionizing radiation. These same defects are also critical in many other areas of oxide reliability research. As a result of this work, the understanding of the basic physical mechanisms has evolved. This book summarizes the new work and integrates it with older work to form a coherent, unified picture. It is aimed primarily at specialists working on radiation effects and oxide reliability.
Author | : Helmuth Spieler |
Publisher | : OUP Oxford |
Total Pages | : 513 |
Release | : 2005-08-25 |
Genre | : Technology & Engineering |
ISBN | : 0191523658 |
Semiconductor sensors patterned at the micron scale combined with custom-designed integrated circuits have revolutionized semiconductor radiation detector systems. Designs covering many square meters with millions of signal channels are now commonplace in high-energy physics and the technology is finding its way into many other fields, ranging from astrophysics to experiments at synchrotron light sources and medical imaging. This book is the first to present a comprehensive discussion of the many facets of highly integrated semiconductor detector systems, covering sensors, signal processing, transistors and circuits, low-noise electronics, and radiation effects. The diversity of design approaches is illustrated in a chapter describing systems in high-energy physics, astronomy, and astrophysics. Finally a chapter "Why things don't work" discusses common pitfalls. Profusely illustrated, this book provides a unique reference in a key area of modern science.