Ion Implantation 1988
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| Author | : J.F. Ziegler |
| Publisher | : Elsevier |
| Total Pages | : 649 |
| Release | : 2012-12-02 |
| Genre | : Science |
| ISBN | : 0323144012 |
Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 335 |
| Release | : 1997-06-12 |
| Genre | : Technology & Engineering |
| ISBN | : 0080864430 |
Defects in ion-implanted semiconductors are important and will likely gain increased importance as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer after high temperature annealing. The editors of this volume and Volume 45 focus on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical, physical, and optical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
| Author | : P. D. Townsend |
| Publisher | : Cambridge University Press |
| Total Pages | : 296 |
| Release | : 1994-06-23 |
| Genre | : Science |
| ISBN | : 9780521394307 |
This book is the first to give a detailed description of the factors and processes that govern the optical properties of ion implanted materials, as well as an overview of the variety of devices that can be produced in this way. Beginning with an overview of the basic physics and practical methods involved in ion implantation, the topics of optical absorption and luminescence are then discussed. A chapter on waveguide analysis then provides the background for a description of particular optical devices, such as waveguide lasers, mirrors, and novel nonlinear materials. The book concludes with a survey of the exciting range of potential applications.
| Author | : Michael Nastasi |
| Publisher | : Cambridge University Press |
| Total Pages | : 572 |
| Release | : 1996-03-29 |
| Genre | : Science |
| ISBN | : 052137376X |
Comprehensive guide to an important materials science technique for students and researchers.
| Author | : Mark Goorsky |
| Publisher | : BoD – Books on Demand |
| Total Pages | : 452 |
| Release | : 2012-05-30 |
| Genre | : Science |
| ISBN | : 9535106341 |
Ion implantation presents a continuously evolving technology. While the benefits of ion implantation are well recognized for many commercial endeavors, there have been recent developments in this field. Improvements in equipment, understanding of beam-solid interactions, applications to new materials, improved characterization techniques, and more recent developments to use implantation for nanostructure formation point to new directions for ion implantation and are presented in this book.
| Author | : Sarah Fearn |
| Publisher | : Morgan & Claypool Publishers |
| Total Pages | : 67 |
| Release | : 2015-10-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1681740885 |
This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
| Author | : Edmund G. Seebauer |
| Publisher | : American Institute of Physics |
| Total Pages | : 582 |
| Release | : 2008-12-11 |
| Genre | : Technology & Engineering |
| ISBN | : 9780735405974 |
The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).
| Author | : |
| Publisher | : |
| Total Pages | : 840 |
| Release | : 1990 |
| Genre | : Power resources |
| ISBN | : |
| Author | : Richard C. Jaeger |
| Publisher | : Pearson |
| Total Pages | : 0 |
| Release | : 2002 |
| Genre | : Integrated circuit |
| ISBN | : 9780201444940 |
For courses in Theory and Fabrication of Integrated Circuits. The author's goal in writing this text was to present a concise survey of the most up-to-date techniques in the field. It is devoted exclusively to processing, and is highlighted by careful explanations, clear, simple language, and numerous fully-solved example problems. This work assumes a minimal knowledge of integrated circuits and of terminal behavior of electronic components such as resistors, diodes, and MOS and bipolar transistors.
| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 321 |
| Release | : 1997-05-23 |
| Genre | : Technology & Engineering |
| ISBN | : 0080864422 |
Defects in ion-implanted semiconductors are important and will likely gain increased importance in the future as annealing temperatures are reduced with successive IC generations. Novel implant approaches, such as MdV implantation, create new types of defects whose origin and annealing characteristics will need to be addressed. Publications in this field mainly focus on the effects of ion implantation on the material and the modification in the implanted layer afterhigh temperature annealing. Electrical and Physicochemical Characterization focuses on the physics of the annealing kinetics of the damaged layer. An overview of characterization tehniques and a critical comparison of the information on annealing kinetics is also presented. - Provides basic knowledge of ion implantation-induced defects - Focuses on physical mechanisms of defect annealing - Utilizes electrical and physico-chemical characterization tools for processed semiconductors - Provides the basis for understanding the problems caused by the defects generated by implantation and the means for their characterization and elimination
