Silicon Compatible Materials, and Technologies for Advanced Integrated Processes, Circuits and Emerging Applications 5
Author | : F. Roozeboom |
Publisher | : The Electrochemical Society |
Total Pages | : 338 |
Release | : 2015 |
Genre | : |
ISBN | : 1607685949 |
Download Integration Of Iii V Materials With Silicon For Optoelectronic Integrated Circuit Applications full books in PDF, epub, and Kindle. Read online free Integration Of Iii V Materials With Silicon For Optoelectronic Integrated Circuit Applications ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author | : F. Roozeboom |
Publisher | : The Electrochemical Society |
Total Pages | : 338 |
Release | : 2015 |
Genre | : |
ISBN | : 1607685949 |
Author | : Fred Roozeboom |
Publisher | : The Electrochemical Society |
Total Pages | : 356 |
Release | : |
Genre | : |
ISBN | : 1607687143 |
Author | : Jianjun Gao |
Publisher | : John Wiley & Sons |
Total Pages | : 258 |
Release | : 2011-09-19 |
Genre | : Technology & Engineering |
ISBN | : 0470828382 |
In Optoelectronic Integrated Circuit Design and Device Modeling, Professor Jianjun Gao introduces the fundamentals and modeling techniques of optoelectronic devices used in high-speed optical transmission systems. Gao covers electronic circuit elements such as FET, HBT, MOSFET, as well as design techniques for advanced optical transmitter and receiver front-end circuits. The book includes an overview of optical communication systems and computer-aided optoelectronic IC design before going over the basic concept of laser diodes. This is followed by modeling and parameter extraction techniques of lasers and photodiodes. Gao covers high-speed electronic semiconductor devices, optical transmitter design, and optical receiver design in the final three chapters. Addresses a gap within the rapidly growing area of transmitter and receiver modeling in OEICs Explains diode physics before device modeling, helping readers understand their equivalent circuit models Provides comprehensive explanations for E/O and O/E conversions done with laser and photodiodes Covers an extensive range of devices for high-speed applications Accessible for students new to microwaves Presentation slides available for instructor use This book is primarily aimed at practicing engineers, researchers, and post-graduates in the areas of RF, microwaves, IC design, photonics and lasers, and solid state devices. The book is also a strong supplement for senior undergraduates taking courses in RF and microwaves. Lecture materials for instructors available at www.wiley.com/go/gao
Author | : Laurent Vivien |
Publisher | : Taylor & Francis |
Total Pages | : 831 |
Release | : 2016-04-19 |
Genre | : Science |
ISBN | : 1439836116 |
The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,
Author | : Omar Azzaroni |
Publisher | : John Wiley & Sons |
Total Pages | : 453 |
Release | : 2023-08-01 |
Genre | : Technology & Engineering |
ISBN | : 3527843388 |
Graphene Field-Effect Transistors In-depth resource on making and using graphene field effect transistors for point-of-care diagnostic devices Graphene Field-Effect Transistors focuses on the design, fabrication, characterization, and applications of graphene field effect transistors, summarizing the state-of-the-art in the field and putting forward new ideas regarding future research directions and potential applications. After a review of the unique electronic properties of graphene and the production of graphene and graphene oxide, the main part of the book is devoted to the fabrication of graphene field effect transistors and their sensing applications. Graphene Field-Effect Transistors includes information on: Electronic properties of graphene, production of graphene oxide and reduced graphene oxide, and graphene functionalization Fundamentals and fabrication of graphene field effect transistors, and nanomaterial/graphene nanostructure-based field-effect transistors Graphene field-effect transistors integrated with microfluidic platforms and flexible graphene field-effect transistors Graphene field-effect transistors for diagnostics applications, and DNA biosensors and immunosensors based on graphene field-effect transistors Graphene field-effect transistors for targeting cancer molecules, brain activity recording, bacterial detection, and detection of smell and taste Providing both fundamentals of the technology and an in-depth overview of using graphene field effect transistors for fabricating bioelectronic devices that can be applied for point-of-care diagnostics, Graphene Field-Effect Transistors is an essential reference for materials scientists, engineering scientists, laboratory medics, and biotechnologists.
Author | : A.G. Cullis |
Publisher | : Springer Science & Business Media |
Total Pages | : 504 |
Release | : 2008-12-02 |
Genre | : Technology & Engineering |
ISBN | : 1402086156 |
This volume contains invited and contributed papers presented at the conference on ‘Microscopy of Semiconducting Materials’ held at the University of Cambridge on 2-5 April 2007. The event was organised under the auspices of the Electron Microscopy and Analysis Group of the Institute of Physics, the Royal Microscopical Society and the Materials Research Society. This international conference was the fifteenth in the series that focuses on the most recent world-wide advances in semiconductor studies carried out by all forms of microscopy and it attracted delegates from more than 20 countries. With the relentless evolution of advanced electronic devices into ever smaller nanoscale structures, the problem relating to the means by which device features can be visualised on this scale becomes more acute. This applies not only to the imaging of the general form of layers that may be present but also to the determination of composition and doping variations that are employed. In view of this scenario, the vital importance of transmission and scanning electron microscopy, together with X-ray and scanning probe approaches can immediately be seen. The conference featured developments in high resolution microscopy and nanoanalysis, including the exploitation of recently introduced aberration-corrected electron microscopes. All associated imaging and analytical techniques were demonstrated in studies including those of self-organised and quantum domain structures. Many analytical techniques based upon scanning probe microscopies were also much in evidence, together with more general applications of X-ray diffraction methods.
Author | : David Louis Harame |
Publisher | : The Electrochemical Society |
Total Pages | : 1280 |
Release | : 2006 |
Genre | : Electronic apparatus and appliances |
ISBN | : 1566775078 |
The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.
Author | : Shih-Yuan Wang |
Publisher | : SPIE-International Society for Optical Engineering |
Total Pages | : 388 |
Release | : 1997 |
Genre | : Technology & Engineering |
ISBN | : |
Author | : Osamu Wada |
Publisher | : Springer Science & Business Media |
Total Pages | : 464 |
Release | : 2013-11-27 |
Genre | : Technology & Engineering |
ISBN | : 1461526868 |
As we approach the end of the present century, the elementary particles of light (photons) are seen to be competing increasingly with the elementary particles of charge (electrons/holes) in the task of transmitting and processing the insatiable amounts of infonnation needed by society. The massive enhancements in electronic signal processing that have taken place since the discovery of the transistor, elegantly demonstrate how we have learned to make use of the strong interactions that exist between assemblages of electrons and holes, disposed in suitably designed geometries, and replicated on an increasingly fine scale. On the other hand, photons interact extremely weakly amongst themselves and all-photonic active circuit elements, where photons control photons, are presently very difficult to realise, particularly in small volumes. Fortunately rapid developments in the design and understanding of semiconductor injection lasers coupled with newly recognized quantum phenomena, that arise when device dimensions become comparable with electronic wavelengths, have clearly demonstrated how efficient and fast the interaction between electrons and photons can be. This latter situation has therefore provided a strong incentive to devise and study monolithic integrated circuits which involve both electrons and photons in their operation. As chapter I notes, it is barely fifteen years ago since the first demonstration of simple optoelectronic integrated circuits were realised using m-V compound semiconductors; these combined either a laser/driver or photodetector/preamplifier combination.