Implementing Gaas
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| Author | : |
| Publisher | : Elsevier |
| Total Pages | : 385 |
| Release | : 1995-09-27 |
| Genre | : Technology & Engineering |
| ISBN | : 0080532292 |
Gallium Arsenide IC Applications Handbook is the first text to offer a comprehensive treatment of Gallium Arsenide (GaAs) integrated chip (IC) applications, specifically in microwave systems. The books coverage of GaAs in microwave monolithic ICs demonstrates why GaAs is being hailed as a material of the future for the various advantages it holds over silicon. This volume provides scientists, physicists, electrical engineers, and technology professionals and managers working on microwave technology with practical information on GaAs applications in radar, electronic warfare, communications, consumer electronics, automotive electronics and traffic control. Includes an executive summary in each volume and chapter Facilitates comprehension with its tutorial writing style Covers key technical issues Emphasizes practical aspects of the technology Contains minimal mathematics Provides a complete reference list
| Author | : Michael S. Shur |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 677 |
| Release | : 2013-11-21 |
| Genre | : Technology & Engineering |
| ISBN | : 1489919899 |
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
| Author | : Omar Wing |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 214 |
| Release | : 1990-10-31 |
| Genre | : Technology & Engineering |
| ISBN | : 9780792390817 |
Gallium Arsenide technology has come of age. GaAs integrated circuits are available today as gate arrays with an operating speed in excess of one Gigabits per second. Special purpose GaAs circuits are used in optical fiber digital communications systems for the purpose of regeneration, multiplexing and switching of the optical signals. As advances in fabrication and packaging techniques are made, the operat ing speed will further increase and the cost of production will reach a point where large scale application of GaAs circuits will be economical in these and other systems where speed is paramount. This book is written for students and engineers who wish to enter into this new field of electronics for the first time and who wish to embark on a serious study of the subject of GaAs circuit design. No prior knowledge of GaAs technology is assumed though some previous experience with MOS circuit design will be helpful. A good part of the book is devoted to circuit analysis, to the extent that is possible for non linear circuits. The circuit model of the GaAs transistor is derived from first principles and analytic formulas useful in predicting the approxi mate circuit performance are also derived. Computer simulation is used throughout the book to show the expected performance and to study the effects of parameter variations.
| Author | : Serge Oktyabrsky |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 451 |
| Release | : 2010-03-16 |
| Genre | : Technology & Engineering |
| ISBN | : 1441915478 |
Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
| Author | : Muhammad M. Hussain |
| Publisher | : CRC Press |
| Total Pages | : 551 |
| Release | : 2019-11-11 |
| Genre | : Science |
| ISBN | : 1351623109 |
Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications. Key Features: • Covers the fundamentals to device applications, including solid-state and mechanics, chemistry, materials science, characterization techniques, and fabrication; • Offers a comprehensive base of knowledge for moving forward in this field, from foundational research to technology development; • Focuses on processing, characterization, and circuits and systems integration for device applications; • Addresses the basic physical properties and mechanics, as well as the nuts and bolts of reliability and performance analysis; • Discusses various technology applications, from printed electronics to logic and memory devices, sensors, actuators, displays, and energy storage and harvesting. This handbook will serve as the one-stop knowledge base for readership who are interested in flexible and stretchable electronics.
| Author | : J. T. Lie |
| Publisher | : CRC Press |
| Total Pages | : 716 |
| Release | : 2000-01-18 |
| Genre | : Science |
| ISBN | : 9789056996895 |
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
| Author | : Marc J. Madou |
| Publisher | : CRC Press |
| Total Pages | : 652 |
| Release | : 2011-06-13 |
| Genre | : Technology & Engineering |
| ISBN | : 142005516X |
From MEMS to Bio-MEMS and Bio-NEMS: Manufacturing Techniques and Applications details manufacturing techniques applicable to bionanotechnology. After reviewing MEMS techniques, materials, and modeling, the author covers nanofabrication, genetically engineered proteins, artificial cells, nanochemistry, and self-assembly. He also discusses scaling laws in MEMS and NEMS, actuators, fluidics, and power and brains in miniature devices. He concludes with coverage of various MEMS and NEMS applications. Fully illustrated in color, the text contains end-of-chapter problems, worked examples, extensive references for further reading, and an extensive glossary of terms. Details the Nanotechnology, Biology, and Manufacturing Techniques Applicable to Bionanotechnology Topics include: Nonlithography manufacturing techniques with lithography-based methods Nature as an engineering guide and contrasts top-down and bottom-up approaches Packaging, assembly, and self-assembly from ICs to DNA and biological cells Selected new MEMS and NEMS processes and materials, metrology techniques, and modeling Scaling laws, actuators, power generation, and the implementation of brains in miniaturizes devices Different strategies for making micromachines smarter The transition out of the laboratory and into the marketplace The third volume in Fundamentals of Microfabrication and Nanotechnology, Third Edition, Three-Volume Set, the book discusses top-down and bottom-up manufacturing methods and explains how to use nature as a guide. It provides a better understanding of how to match different manufacturing options with a given application that students can use to identify additional killer MEMS and NEMS applications. Other volumes in the set include: Solid-State Physics, Fluidics, and Analytical Techniques in Micro- and Nanotechnology Manufacturing Techniques for Microfabrication and Nanotechnology
| Author | : Inder Bahl |
| Publisher | : John Wiley & Sons |
| Total Pages | : 696 |
| Release | : 2009-06-17 |
| Genre | : Technology & Engineering |
| ISBN | : 9780470462317 |
A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 481 |
| Release | : 1994-07-06 |
| Genre | : Technology & Engineering |
| ISBN | : 0080864384 |
Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices
| Author | : I. Ohdomari |
| Publisher | : Elsevier |
| Total Pages | : 600 |
| Release | : 2017-05-03 |
| Genre | : Science |
| ISBN | : 1483290484 |
This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
