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| Author | : James Huguenin-Love |
| Publisher | : |
| Total Pages | : |
| Release | : 2010 |
| Genre | : Cathode sputtering (Plating process) |
| ISBN | : 9781124124155 |
| Author | : Bagher Bahavar |
| Publisher | : |
| Total Pages | : 308 |
| Release | : 1993 |
| Genre | : Crystal growth |
| ISBN | : |
| Author | : Mariana Amorim Fraga |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2011 |
| Genre | : Amorphous semiconductors |
| ISBN | : 9781613247747 |
Silicon carbide (SiC) has been described as a suitable semiconductor material to use in MEMS and electronic devices for harsh environments. In recent years, many developments in SiC technology as bulk growth, materials processing, electronic devices and sensors have been shown. Moreover, some studies show the synthesis, characterisation and processing of crystalline SiC films. However, few works have investigated the potential of amorphous silicon carbide (a-SiC) thin films for sensors applications. This book presents fundamentals of amorphous silicon carbide thin films and their applications in piezoresistive sensors for high temperature applications.
| Author | : Bryan Kent Oliver |
| Publisher | : |
| Total Pages | : 138 |
| Release | : 1999 |
| Genre | : |
| ISBN | : |
On the other hand, with He dilution at 15 mTorr the percent crystallinity obtained was also 86%, with decreasing crystallinity at lower pressures. We found that a dilution consisting of a 50%-50% mixture of H2-He, which allows a high ion bombardment deposition from the helium that is also benefited by the hydrogen etching effect, did not compromise the quality of the films. This plasma selection produced about 84% crystalline films, independent of the pressure setting. X-ray diffraction reveals the dominant crystal textures are 111 and 220 orientations, with 220 preferential growth at higher deposition pressures. The CH4/SiH4 flow ratio was found critical to the formation of microcrystalline SiC.
| Author | : Frederick Paul Vaccaro |
| Publisher | : |
| Total Pages | : 406 |
| Release | : 1999 |
| Genre | : |
| ISBN | : |
ABSTRACT: Cubic silicon carbide is a promising material for applications in high-power, high-frequency, high-temperature, and high-speed electronic devices. Fourier Transform Infrared Spectroscopy (FTIR), Secondary Ion Mass Spectrometry (SIMS), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) evaluations performed on thin films grown heteroepitaxially on porous (i.e. anodized) silicon using a new chemical vapor deposition (CVD) method employing trimethylsilane confirmed that the thin films were stoichiometric, cubic silicon carbide (3C-SiC). Conclusions were drawn on the basis of comparisons with published standards as well as with results generated on reference materials. SIMS profiles revealed the growth rates at approximately 1150̊C to vary from 2.1 to 4.0 Å/min. depending upon the slight variations in the CVD process trimethylsilane gas pressure. AFM evaluations revealed that the deposition mode at short deposition times was homo-oriented island nucleation and growth but that the 3C-SiC thin films evolved into continuous terraced layers at longer deposition times. Heterojunction (pn) junction diodes, fabricated from CVD and chemical vapor converted (CVC) porous silicon specimens, displayed world record breakdown voltages as high as 140 volts and 150 volts respectively. Historically, heterojunction (pn) junction diodes fabricated from 3C-SiC thin film specimens deposited on non-anodized displayed breakdown voltages below 10 to 20 volts.
