Gettering And Defect Engineering In Semiconductor Technology Iv
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Author | : M. Kittler |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 659 |
Release | : 1991-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3035703019 |
Proceedings of the 4th International Conference on Gettering and Defect Engineering In Semiconductor Technology (GADEST '91), Frankfurt, Germany, October 1991
Author | : M. Kittler |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 618 |
Release | : 1989-01-01 |
Genre | : Technology & Engineering |
ISBN | : 3035706441 |
Proceedings of the 3rd International Conference on Gettering and Defect Engineering in Semiconductor Technology (GADEST '89) held at Garzau, GDR, October 1989
Author | : |
Publisher | : |
Total Pages | : 856 |
Release | : 2002 |
Genre | : Electric engineering |
ISBN | : |
Author | : J.D. Murphy |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 513 |
Release | : 2013-10-07 |
Genre | : Technology & Engineering |
ISBN | : 3038262056 |
GADEST 2013 Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Author | : Victor A. Perevostchikov |
Publisher | : Springer Science & Business Media |
Total Pages | : 400 |
Release | : 2005-12-12 |
Genre | : Technology & Engineering |
ISBN | : 3540294996 |
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
Author | : Peter Pichler |
Publisher | : Trans Tech Publications Ltd |
Total Pages | : 492 |
Release | : 2015-10-23 |
Genre | : Technology & Engineering |
ISBN | : 3035700834 |
Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany
Author | : |
Publisher | : |
Total Pages | : 724 |
Release | : 2000 |
Genre | : Crystal growth |
ISBN | : |
Author | : Howard R. Huff |
Publisher | : The Electrochemical Society |
Total Pages | : 650 |
Release | : 2002 |
Genre | : Science |
ISBN | : 9781566773744 |
Author | : Cor L. Claeys |
Publisher | : The Electrochemical Society |
Total Pages | : 504 |
Release | : 2006 |
Genre | : Crystal growth |
ISBN | : 1566775043 |
This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.
Author | : Peter Pichler |
Publisher | : Springer Science & Business Media |
Total Pages | : 576 |
Release | : 2012-12-06 |
Genre | : Technology & Engineering |
ISBN | : 3709105978 |
This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.