Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA
Author: Gerald B. Stringfellow
Publisher: CRC Press
Total Pages: 680
Release: 2020-11-25
Genre: Science
ISBN: 100011225X

Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan
Author: Ikegami
Publisher: CRC Press
Total Pages: 1002
Release: 1993-01-01
Genre: Technology & Engineering
ISBN: 9780750302500

Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Introduction to Applied Solid State Physics

Introduction to Applied Solid State Physics
Author: R. Dalven
Publisher: Springer Science & Business Media
Total Pages: 424
Release: 2012-12-06
Genre: Science
ISBN: 1468413309

In addition to the topics discussed in the First Edition, this Second Edition contains introductory treatments of superconducting materials and of ferromagnetism. I think the book is now more balanced because it is divided perhaps 60% - 40% between devices (of all kinds) and materials (of all kinds). For the physicist interested in solid state applications, I suggest that this ratio is reasonable. I have also rewritten a number of sections in the interest of (hopefully) increased clarity. The aims remain those stated in the Preface to the First Edition; the book is a survey of the physics of a number of solid state devices and ma terials. Since my object is a discussion of the basic ideas in a number of fields, I have not tried to present the "state of the art," especially in semi conductor devices. Applied solid state physics is too vast and rapidly changing to cover completely, and there are many references available to recent developments. For these reasons, I have not treated a number of interesting areas. Among the lacunae are superiattices, heterostructures, compound semiconductor devices, ballistic transistors, integrated optics, and light wave communications. (Suggested references to those subjects are given in an appendix. ) I have tried to cover some of the recent revolutionary developments in superconducting materials.

Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany

Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany
Author: Günter Weimann
Publisher: CRC Press
Total Pages: 880
Release: 1994-01-01
Genre: Technology & Engineering
ISBN: 9780750302951

Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.

D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991

D(X) Centres and other Metastable Defects in Semiconductors, Proceedings of the INT Symposium, Mauterndorf, Austria, 18-22 February 1991
Author: W. Jantsch
Publisher: CRC Press
Total Pages: 164
Release: 2020-11-25
Genre: Science
ISBN: 1000112233

Since the first reports on metastable defects in III-V and II-VI compound semiconductors appeared in the late 1960s, the number of reports on defects with metastable states has been growing at an ever increasing rate. D(X)-center and other metastability defects cause many technical problems that are exacerbated by the uncertainty and controversy surrounding the mechanisms that cause them. A lively mix of theoretical and experimental discussions, D(X)-Centres and other Metastable Defects in Semiconductors presents a timely investigation of these systems. The book discusses topics such as, the validity of negative or positive U models, as well as alternative views that challenge existing ideas. The richness and precision of experimental data now emerging in the field is chronicled as are new investigative techniques. Based on an INT symposium, this book provides a successful forum where an extraordinary variety of ideas, including new perspectives, are examined critically.