Nanocrystals in Nonvolatile Memory

Nanocrystals in Nonvolatile Memory
Author: Writam Banerjee
Publisher: CRC Press
Total Pages: 683
Release: 2024-08-09
Genre: Technology & Engineering
ISBN: 1040119107

In recent years, the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals in various applications have attracted considerable scientific attention in the field of nonvolatile memory (NVM). Nanocrystals are the driving elements that have helped nonvolatile flash memory technology reach its distinguished height, but new approaches are still needed to strengthen nanocrystal-based nonvolatile technology for future applications. This book presents comprehensive knowledge on nanocrystal fabrication methods and applications of nanocrystals in baseline NVM and emerging NVM technologies and the chapters are written by experts in the field from all over the globe. The book presents a detailed analysis on nanocrystal-based emerging devices by a high-level researcher in the field. It has a unique chapter especially dedicated to graphene-based flash memory devices, considering the importance of carbon allotropes in future applications. This updated edition covers emerging ferroelectric memory device, which is a technology for the future, and the chapter is contributed by the well-known Ferroelectric Memory Company, Germany. It includes information related to the applications of emerging memories in sensors and the chapter is contributed by Ajou University, South Korea. The book introduces a new chapter for emerging NVM technology in artificial intelligence and the chapter is contributed by University College London, UK. It guides the readers throughout with appropriate illustrations, excellent figures, and references in each chapter. It is a valuable tool for researchers and developers from the fields of electronics, semiconductors, nanotechnology, materials science, and solid-state memories.

Nanocrystals in Nonvolatile Memory

Nanocrystals in Nonvolatile Memory
Author: Writam Banerjee
Publisher: CRC Press
Total Pages: 534
Release: 2018-10-09
Genre: Science
ISBN: 1351203258

In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices.

Metal Oxides for Non-volatile Memory

Metal Oxides for Non-volatile Memory
Author: Panagiotis Dimitrakis
Publisher: Elsevier
Total Pages: 534
Release: 2022-03-01
Genre: Technology & Engineering
ISBN: 0128146303

Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Nonvolatile Memories

Nonvolatile Memories
Author: Tseung-Yuen Tseng
Publisher:
Total Pages:
Release: 2012
Genre: Flash memories (Computers)
ISBN: 9781588832504

Device Applications of Silicon Nanocrystals and Nanostructures

Device Applications of Silicon Nanocrystals and Nanostructures
Author: Nobuyoshi Koshida
Publisher: Springer Science & Business Media
Total Pages: 350
Release: 2008-12-11
Genre: Technology & Engineering
ISBN: 0387786899

Recent developments in the technology of silicon nanocrystals and silicon nanostructures, where quantum-size effects are important, are systematically described including examples of device applications. Due to the strong quantum confinement effect, the material properties are freed from the usual indirect- or direct-bandgap regime, and the optical, electrical, thermal, and chemical properties of these nanocrystalline and nanostructured semiconductors are drastically changed from those of bulk silicon. In addition to efficient visible luminescence, various other useful material functions are induced in nanocrystalline silicon and periodic silicon nanostructures. Some novel devices and applications, in fields such as photonics (electroluminescence diode, microcavity, and waveguide), electronics (single-electron device, spin transistor, nonvolatile memory, and ballistic electron emitter), acoustics, and biology, have been developed by the use of these quantum-induced functions in ways different from the conventional scaling principle for ULSI.

Nonvolatile Memory Devices with Colloidal, 1.0 Nm Silicon Nanoparticles

Nonvolatile Memory Devices with Colloidal, 1.0 Nm Silicon Nanoparticles
Author: Osama Munir Nayfeh
Publisher:
Total Pages: 210
Release: 2009
Genre:
ISBN:

(Cont.) Energy band analysis was used to understand the nature of charging, hole-type versus electron-type and pure hole-type charging was shown to occur due to the characteristics of ultra-small silicon nanoparticles: large energy gap, large charging energy, and consequently small electron affinity. The retention time behavior of the 1.0 nm nanoparticle device was shown to be reduced due to a reduced valence band-offset with SiO2, however the programming time is shown to be dramatically reduced over that of conventional bulk devices. Quantum mechanical tunneling calculations were used to explore and predict routes for increasing the retention behavior by modulating the tunneling distance and experimental devices based on these calculations were fabricated in the SiO2 system to study experimentally directly these dependencies.

Silicon Non-Volatile Memories

Silicon Non-Volatile Memories
Author: Barbara de Salvo
Publisher: John Wiley & Sons
Total Pages: 222
Release: 2013-05-10
Genre: Technology & Engineering
ISBN: 1118617800

Semiconductor flash memory is an indispensable component of modern electronic systems which has gained a strategic position in recent decades due to the progressive shift from computing to consumer (and particularly mobile) products as revenue drivers for Integrated Circuits (IC) companies. This book provides a comprehensive overview of the different technological approaches currently being studied to fulfill future memory requirements. Two main research paths are identified and discussed. Different "evolutionary paths" based on the use of new materials (such as silicon nanocrystals for storage nodes and high-k insulators for active dielectrics) and of new transistor structures (such as multi-gate devices) are investigated in order to extend classical floating gate technology to the 32 nm node. "Disruptive paths" based on new storage mechanisms or new technologies (such as phase-change devices, polymer or molecular cross-bar memories) are also covered in order to address 22 nm and smaller IC generations. Finally, the main factors at the origin of these phenomena are identified and analyzed, providing pointers on future research activities and developments in this area.