Presents the theory for calculating Raman line shapes as functions of the Fermi energy and finite temperatures in zinc blende, n-type GaAs for donor densities between 10 to the 16th cm -3 and 10 to the 19th cm -3. Compared to other theories, this theory is unique in two respects: (1) the many-body effects are treated self-consistently; and (2) the theory is valid at room temperature for arbitrary values of the ratio R = (Q to the 2nd/alpha), where Q is the magnitude of the normalization wave vector and alpha is the normalized frequency used in the Raman measurements. These calculations solve the charge neutrality equation self-consistently for a two-band model of GaAs at 300 K that includes the effects of high carrier concentrations and dopant densities on the perturbed densities of states used to calculate the Fermi energy as a function of temperature. Illus.