Emerging Non Volatile Memory Technologies
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| Author | : Wen Siang Lew |
| Publisher | : Springer Nature |
| Total Pages | : 439 |
| Release | : 2021-01-09 |
| Genre | : Science |
| ISBN | : 9811569126 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
| Author | : Seungbum Hong |
| Publisher | : Springer |
| Total Pages | : 280 |
| Release | : 2014-11-18 |
| Genre | : Technology & Engineering |
| ISBN | : 1489975373 |
This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.
| Author | : Yuan Xie |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 321 |
| Release | : 2013-10-21 |
| Genre | : Technology & Engineering |
| ISBN | : 144199551X |
This book explores the design implications of emerging, non-volatile memory (NVM) technologies on future computer memory hierarchy architecture designs. Since NVM technologies combine the speed of SRAM, the density of DRAM, and the non-volatility of Flash memory, they are very attractive as the basis for future universal memories. This book provides a holistic perspective on the topic, covering modeling, design, architecture and applications. The practical information included in this book will enable designers to exploit emerging memory technologies to improve significantly the performance/power/reliability of future, mainstream integrated circuits.
| Author | : Yoshio Nishi |
| Publisher | : Elsevier |
| Total Pages | : 456 |
| Release | : 2014-06-24 |
| Genre | : Computers |
| ISBN | : 0857098098 |
New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)
| Author | : Joe Brewer |
| Publisher | : John Wiley & Sons |
| Total Pages | : 766 |
| Release | : 2011-09-23 |
| Genre | : Technology & Engineering |
| ISBN | : 1118211626 |
Presented here is an all-inclusive treatment of Flash technology, including Flash memory chips, Flash embedded in logic, binary cell Flash, and multilevel cell Flash. The book begins with a tutorial of elementary concepts to orient readers who are less familiar with the subject. Next, it covers all aspects and variations of Flash technology at a mature engineering level: basic device structures, principles of operation, related process technologies, circuit design, overall design tradeoffs, device testing, reliability, and applications.
| Author | : Wen Siang Lew |
| Publisher | : |
| Total Pages | : 0 |
| Release | : 2021 |
| Genre | : |
| ISBN | : 9789811569111 |
This book offers a balanced and comprehensive guide to the core principles, fundamental properties, experimental approaches, and state-of-the-art applications of two major groups of emerging non-volatile memory technologies, i.e. spintronics-based devices as well as resistive switching devices, also known as Resistive Random Access Memory (RRAM). The first section presents different types of spintronic-based devices, i.e. magnetic tunnel junction (MTJ), domain wall, and skyrmion memory devices. This section describes how their developments have led to various promising applications, such as microwave oscillators, detectors, magnetic logic, and neuromorphic engineered systems. In the second half of the book, the underlying device physics supported by different experimental observations and modelling of RRAM devices are presented with memory array level implementation. An insight into RRAM desired properties as synaptic element in neuromorphic computing platforms from material and algorithms viewpoint is also discussed with specific example in automatic sound classification framework.
| Author | : Betty Prince |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 290 |
| Release | : 2007-05-08 |
| Genre | : Technology & Engineering |
| ISBN | : 0306475537 |
Emerging Memories: Technologies and Trends attempts to provide background and a description of the basic technology, function and properties of emerging as well as discussing potentially suitable applications. This book explores a range of new memory products and technologies. The concept for some of these memories has been around for years. A few completely new. Some involve materials that have been in volume production in other type of devices for some time. Ferro-electrics, for example, have been used in capacitors for more than 30 years. In addition to looking at using known devices and materials in novel ways, there are new technologies being investigated such as DNA memories, light memories, molecular memories, and carbon nanotube memories, as well as the new polymer memories which hold the potential for the significant manufacturing reduction. Emerging Memories: Technologies and Trends is a useful reference for the professional engineer in the semiconductor industry.
| Author | : Tseung-Yuen Tseng |
| Publisher | : |
| Total Pages | : |
| Release | : 2012 |
| Genre | : Flash memories (Computers) |
| ISBN | : 9781588832504 |
| Author | : Yoshio Nishi |
| Publisher | : Woodhead Publishing |
| Total Pages | : 0 |
| Release | : 2019-06-18 |
| Genre | : Science |
| ISBN | : 9780081025840 |
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices.
| Author | : Jue Wang |
| Publisher | : |
| Total Pages | : |
| Release | : 2014 |
| Genre | : |
| ISBN | : |
SRAM and DRAM have been used to build our memory systems for decades, but their scalability is facing more and more challenges in terms of leakage power and density. Meanwhile, new emerging non-volatile memory technologies (NVMs) are being explored, such as Phase-Change RAM (PCM or PCRAM), Spin-Torque Transfer RAM (STTRAM or MRAM), and Resistive RAM (ReRAM). They have common advantages of high density, low standby power and non-volatility. It could bring benefits by using NVMs to replace SRAM and DRAM in our memory systems. However, NVM technologies still have some disadvantages. First, the NVM write operation is much more expensive in terms of longer latency and higher energy. It causes negative impacts on the system performance and energy efficiency. Second, NVMs usually have limited write endurance, which brings challenges on system reliability. Last but not least, the size of NVM sense amplifier is larger, and how to maintain the area utilization is an issue. All of these NVM characteristics are caused by their basic mechanisms, and they are very difficult to be improved by changing cell designs. Therefore, new architecture techniques are necessary for mitigating these issues and building efficient and reliable systems with NVMs.In this dissertation, NVMs are evaluated as alternatives of traditional memory technologies for different memory levels. We explore NVMs as main memory systems, on-chip caches and GPGPU register files. We analyze their impact on system level and propose several techniques on architecture level to mitigate their disadvantages. We believe these techniques make NVMs more attractive in the future computer systems.
