Electrical And Optical Properties Of Indium Nitride And Indium Rich Nitrides Prepared By Molecular Beam Epitaxy For Opto Electronics Applications
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Dilute Nitride Semiconductors
| Author | : Mohamed Henini |
| Publisher | : Elsevier |
| Total Pages | : 648 |
| Release | : 2004-12-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0080455999 |
- This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. - It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics - Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field - Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas - Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community
Iii-nitride Semiconductor Materials
| Author | : Zhe Chuan Feng |
| Publisher | : World Scientific |
| Total Pages | : 442 |
| Release | : 2006-03-20 |
| Genre | : Technology & Engineering |
| ISBN | : 1908979941 |
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Optoelectronic Devices
| Author | : M Razeghi |
| Publisher | : Elsevier |
| Total Pages | : 602 |
| Release | : 2004 |
| Genre | : Science |
| ISBN | : 9780080444260 |
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
III-nitride Devices and Nanoengineering
| Author | : Zhe Chuan Feng |
| Publisher | : World Scientific |
| Total Pages | : 477 |
| Release | : 2008 |
| Genre | : Technology & Engineering |
| ISBN | : 1848162235 |
Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Piezotronics and Piezo-Phototronics
| Author | : Zhong Lin Wang |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 254 |
| Release | : 2013-01-11 |
| Genre | : Technology & Engineering |
| ISBN | : 364234237X |
The fundamental principle of piezotronics and piezo-phototronics were introduced by Wang in 2007 and 2010, respectively. Due to the polarization of ions in a crystal that has non-central symmetry in materials, such as the wurtzite structured ZnO, GaN and InN, a piezoelectric potential (piezopotential) is created in the crystal by applying a stress. Owing to the simultaneous possession of piezoelectricity and semiconductor properties, the piezopotential created in the crystal has a strong effect on the carrier transport at the interface/junction. Piezotronics is for devices fabricated using the piezopotential as a “gate” voltage to control charge carrier transport at a contact or junction. The piezo-phototronic effect uses the piezopotential to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detector, solar cell and LED. The functionality offered by piezotroics and piezo-phototronics are complimentary to CMOS technology. There is an effective integration of piezotronic and piezo-phototronic devices with silicon based CMOS technology. Unique applications can be found in areas such as human-computer interfacing, sensing and actuating in nanorobotics, smart and personalized electronic signatures, smart MEMS/NEMS, nanorobotics and energy sciences. This book introduces the fundamentals of piezotronics and piezo-phototronics and advanced applications. It gives guidance to researchers, engineers and graduate students.
Nitride Semiconductors: Volume 482
| Author | : Materials Research Society. Meeting |
| Publisher | : |
| Total Pages | : 1274 |
| Release | : 1998-04-20 |
| Genre | : Technology & Engineering |
| ISBN | : |
This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.
