Design And Characterization Of Group Iii V Heterojunction Bipolar Transistors
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Chemical Vapour Deposition
| Author | : Anthony C. Jones |
| Publisher | : Royal Society of Chemistry |
| Total Pages | : 600 |
| Release | : 2009 |
| Genre | : Science |
| ISBN | : 0854044655 |
"The book is one of the most comprehensive overviews ever written on the key aspects of chemical vapour deposition processes and it is more comprehensive, technically detailed and up-to-date than other books on CVD. The contributing authors are all practising CVD technologists and are leading international experts in the field of CVD. It presents a logical and progressive overview of the various aspects of CVD processes. Basic concepts, such as the various types of CVD processes, the design of CVD reactors, reaction modelling and CVD precursor chemistry are covered in the first few"--Jacket
Silicon-germanium Heterojunction Bipolar Transistors
| Author | : John D. Cressler |
| Publisher | : Artech House |
| Total Pages | : 592 |
| Release | : 2003 |
| Genre | : Science |
| ISBN | : 9781580535991 |
This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.
Topics in Growth and Device Processing of III-V Semiconductors
| Author | : S. J. Pearton |
| Publisher | : World Scientific |
| Total Pages | : 568 |
| Release | : 1996 |
| Genre | : Technology & Engineering |
| ISBN | : 9789810218843 |
This book describes advanced epitaxial growth and self-aligned processing techniques for the fabrication of III-V semiconductor devices such as heterojunction bipolar transistors and high electron mobility transistors. It is the first book to describe the use of carbon-doping and low damage dry etching techniques that have proved indispensable in making reliable, high performance devices. These devices are used in many applications such as cordless telephones and high speed lightwave communication systems.
