Defect Interaction and Clustering in Semiconductors

Defect Interaction and Clustering in Semiconductors
Author: Sergio Pizzini
Publisher: Trans Tech Publications Ltd
Total Pages: 370
Release: 2001-12-12
Genre: Technology & Engineering
ISBN: 3035707081

Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may – if not carefully controlled– induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Defect Interaction and Clustering in Semiconductors

Defect Interaction and Clustering in Semiconductors
Author: Sergio Pizzini
Publisher: Scitec Publications
Total Pages: 440
Release: 2002
Genre: Science
ISBN:

Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Charged Semiconductor Defects

Charged Semiconductor Defects
Author: Edmund G. Seebauer
Publisher: Springer Science & Business Media
Total Pages: 304
Release: 2008-11-14
Genre: Science
ISBN: 1848820593

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Identification of Defects in Semiconductors

Identification of Defects in Semiconductors
Author:
Publisher: Academic Press
Total Pages: 393
Release: 1998-07-02
Genre: Technology & Engineering
ISBN: 0080864481

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Defects and Diffusion in Semiconductors XIV

Defects and Diffusion in Semiconductors XIV
Author: David J. Fisher
Publisher: Trans Tech Publications Ltd
Total Pages: 173
Release: 2012-12-04
Genre: Technology & Engineering
ISBN: 3038139866

This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing – Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.

Defects and Diffusion in Semiconductors IV

Defects and Diffusion in Semiconductors IV
Author: David J. Fisher
Publisher: Trans Tech Publications Ltd
Total Pages: 500
Release: 2001-11-30
Genre: Technology & Engineering
ISBN: 303570709X

This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Defects and Diffusion in Semiconductors XIII

Defects and Diffusion in Semiconductors XIII
Author: David J. Fisher
Publisher: Trans Tech Publications Ltd
Total Pages: 199
Release: 2011-07-04
Genre: Technology & Engineering
ISBN: 3038135208

This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: “Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide” (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), “Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles” (M.Ragam, N.Sankar, K.Ramachandran), “The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl” (L.Chen, Z.Qiu), “Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow” (D.P.Adhikary, A.H.Wilkins), “Theoretical Investigations of the Defect Structure for Ni3+ in ZnO” (Z.H.Zhang, S.Y.Wu, S.X.Zhang).

Physical Chemistry of Semiconductor Materials and Processes

Physical Chemistry of Semiconductor Materials and Processes
Author:
Publisher: John Wiley & Sons
Total Pages: 420
Release: 2015-10-12
Genre: Science
ISBN: 1118514572

The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.