Channel And Source Coding For Non Volatile Flash Memories
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| Author | : Mohammed Rajab |
| Publisher | : Springer Nature |
| Total Pages | : 153 |
| Release | : 2020-01-02 |
| Genre | : Computers |
| ISBN | : 3658289821 |
Mohammed Rajab proposes different technologies like the error correction coding (ECC), sources coding and offset calibration that aim to improve the reliability of the NAND flash memory with low implementation costs for industrial application. The author examines different ECC schemes based on concatenated codes like generalized concatenated codes (GCC) which are applicable for NAND flash memories by using the hard and soft input decoding. Furthermore, different data compression schemes are examined in order to reduce the write amplification effect and also to improve the error correct capability of the ECC by combining both schemes.
| Author | : Malek Safieh |
| Publisher | : Springer Nature |
| Total Pages | : 155 |
| Release | : 2021-08-09 |
| Genre | : Computers |
| ISBN | : 3658344598 |
In this work, algorithms and architectures for cryptography and source coding are developed, which are suitable for many resource-constrained embedded systems such as non-volatile flash memories. A new concept for elliptic curve cryptography is presented, which uses an arithmetic over Gaussian integers. Gaussian integers are a subset of the complex numbers with integers as real and imaginary parts. Ordinary modular arithmetic over Gaussian integers is computational expensive. To reduce the complexity, a new arithmetic based on the Montgomery reduction is presented. For the elliptic curve point multiplication, this arithmetic over Gaussian integers improves the computational efficiency, the resistance against side channel attacks, and reduces the memory requirements. Furthermore, an efficient variant of the Lempel-Ziv-Welch (LZW) algorithm for universal lossless data compression is investigated. Instead of one LZW dictionary, this algorithm applies several dictionaries to speed up the encoding process. Two dictionary partitioning techniques are introduced that improve the compression rate and reduce the memory size of this parallel dictionary LZW algorithm.
| Author | : Rino Micheloni |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 338 |
| Release | : 2008-06-03 |
| Genre | : Technology & Engineering |
| ISBN | : 1402083912 |
Nowadays it is hard to find an electronic device which does not use codes: for example, we listen to music via heavily encoded audio CD's and we watch movies via encoded DVD's. There is at least one area where the use of encoding/decoding is not so developed, yet: Flash non-volatile memories. Flash memory high-density, low power, cost effectiveness, and scalable design make it an ideal choice to fuel the explosion of multimedia products, like USB keys, MP3 players, digital cameras and solid-state disk. In ECC for Non-Volatile Memories the authors expose the basics of coding theory needed to understand the application to memories, as well as the relevant design topics, with reference to both NOR and NAND Flash architectures. A collection of software routines is also included for better understanding. The authors form a research group (now at Qimonda) which is the typical example of a fruitful collaboration between mathematicians and engineers.
| Author | : |
| Publisher | : Academic Press |
| Total Pages | : 687 |
| Release | : 2014-07-29 |
| Genre | : Technology & Engineering |
| ISBN | : 012397223X |
This book gives a review of the principles, methods and techniques of important and emerging research topics and technologies in Channel Coding, including theory, algorithms, and applications. Edited by leading people in the field who, through their reputation, have been able to commission experts to write on a particular topic. With this reference source you will: - Quickly grasp a new area of research - Understand the underlying principles of a topic and its applications - Ascertain how a topic relates to other areas and learn of the research issues yet to be resolved - Quick tutorial reviews of important and emerging topics of research in Channel Coding - Presents core principles in Channel Coding theory and shows their applications - Reference content on core principles, technologies, algorithms and applications - Comprehensive references to journal articles and other literature on which to build further, more specific and detailed knowledge
| Author | : Harry J.M. Veendrick |
| Publisher | : Springer |
| Total Pages | : 639 |
| Release | : 2017-04-28 |
| Genre | : Technology & Engineering |
| ISBN | : 3319475975 |
This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.
| Author | : Massimo Rudan |
| Publisher | : Springer Nature |
| Total Pages | : 1680 |
| Release | : 2022-11-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030798275 |
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
| Author | : Rino Micheloni |
| Publisher | : Springer |
| Total Pages | : 391 |
| Release | : 2016-05-26 |
| Genre | : Computers |
| ISBN | : 9401775125 |
This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of the flash memory cell itself, covering both floating gate and emerging charge trap technologies. There is a plethora of different materials and vertical integration schemes out there. New memory cells, new materials, new architectures (3D Stacked, BiCS and P-BiCS, 3D FG, 3D VG, 3D advanced architectures); basically, each NAND manufacturer has its own solution. Chapter 3 to chapter 7 offer a broad overview of how 3D can materialize. The 3D wave is impacting emerging memories as well and chapter 8 covers 3D RRAM (resistive RAM) crosspoint arrays. Visualizing 3D structures can be a challenge for the human brain: this is way all these chapters contain a lot of bird’s-eye views and cross sections along the 3 axes. The second part of the book is devoted to other important aspects, such as advanced packaging technology (i.e. TSV in chapter 9) and error correction codes, which have been leveraged to improve flash reliability for decades. Chapter 10 describes the evolution from legacy BCH to the most recent LDPC codes, while chapter 11 deals with some of the most recent advancements in the ECC field. Last but not least, chapter 12 looks at 3D flash memories from a system perspective. Is 14nm the last step for planar cells? Can 100 layers be integrated within the same piece of silicon? Is 4 bit/cell possible with 3D? Will 3D be reliable enough for enterprise and datacenter applications? These are some of the questions that this book helps answering by providing insights into 3D flash memory design, process technology and applications.
| Author | : Paulo Cappelletti |
| Publisher | : Springer |
| Total Pages | : 540 |
| Release | : 1999-06-30 |
| Genre | : Technology & Engineering |
| ISBN | : 0792384873 |
A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].
| Author | : |
| Publisher | : |
| Total Pages | : 2692 |
| Release | : 2002 |
| Genre | : Chemistry |
| ISBN | : |
| Author | : Steve Scargall |
| Publisher | : Apress |
| Total Pages | : 387 |
| Release | : 2020-01-09 |
| Genre | : Computers |
| ISBN | : 1484249321 |
Beginning and experienced programmers will use this comprehensive guide to persistent memory programming. You will understand how persistent memory brings together several new software/hardware requirements, and offers great promise for better performance and faster application startup times—a huge leap forward in byte-addressable capacity compared with current DRAM offerings. This revolutionary new technology gives applications significant performance and capacity improvements over existing technologies. It requires a new way of thinking and developing, which makes this highly disruptive to the IT/computing industry. The full spectrum of industry sectors that will benefit from this technology include, but are not limited to, in-memory and traditional databases, AI, analytics, HPC, virtualization, and big data. Programming Persistent Memory describes the technology and why it is exciting the industry. It covers the operating system and hardware requirements as well as how to create development environments using emulated or real persistent memory hardware. The book explains fundamental concepts; provides an introduction to persistent memory programming APIs for C, C++, JavaScript, and other languages; discusses RMDA with persistent memory; reviews security features; and presents many examples. Source code and examples that you can run on your own systems are included. What You’ll Learn Understand what persistent memory is, what it does, and the value it brings to the industry Become familiar with the operating system and hardware requirements to use persistent memory Know the fundamentals of persistent memory programming: why it is different from current programming methods, and what developers need to keep in mind when programming for persistence Look at persistent memory application development by example using the Persistent Memory Development Kit (PMDK)Design and optimize data structures for persistent memoryStudy how real-world applications are modified to leverage persistent memoryUtilize the tools available for persistent memory programming, application performance profiling, and debugging Who This Book Is For C, C++, Java, and Python developers, but will also be useful to software, cloud, and hardware architects across a broad spectrum of sectors, including cloud service providers, independent software vendors, high performance compute, artificial intelligence, data analytics, big data, etc.
