Breakdown Phenomena In Semiconductors And Semiconductor Devices
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| Author | : Michael Levinshtein |
| Publisher | : World Scientific |
| Total Pages | : 223 |
| Release | : 2005 |
| Genre | : Technology & Engineering |
| ISBN | : 9812563954 |
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
| Author | : Michael E Levinshtein |
| Publisher | : World Scientific |
| Total Pages | : 223 |
| Release | : 2005-09-07 |
| Genre | : Technology & Engineering |
| ISBN | : 9814479926 |
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
| Author | : Michael Levinshtein |
| Publisher | : World Scientific |
| Total Pages | : 226 |
| Release | : 2005 |
| Genre | : Technology & Engineering |
| ISBN | : 9812703330 |
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices. The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
| Author | : Michael S. Shur |
| Publisher | : World Scientific |
| Total Pages | : 205 |
| Release | : 2007 |
| Genre | : Science |
| ISBN | : 981277033X |
This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many firsts and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and hot off the press results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
| Author | : |
| Publisher | : Allied Publishers |
| Total Pages | : 800 |
| Release | : 2000 |
| Genre | : |
| ISBN | : 9788170239987 |
| Author | : Yuyu Liu |
| Publisher | : World Scientific |
| Total Pages | : 242 |
| Release | : 2006-03-09 |
| Genre | : Technology & Engineering |
| ISBN | : 9814478709 |
This book explores the unique advantages and large inherent transmission capacity of optical fiber communication systems. The long-term and high-risk research challenges of optical transceivers are analyzed with a view to sustaining the seemingly insatiable demand for bandwidth. A broad coverage of topics relating to the design of high-speed optical devices and integrated circuits, oriented to low power, low cost, and small area, is discussed.Written by specialists with many years of research and engineering experience in the field of optical fiber communication, this book is essential for an audience dedicated to the development of integrated electronic systems for optical communication applications. It can also be used as a supplementary text for graduate courses on optical transceiver IC design.
| Author | : Ahmed Belasri |
| Publisher | : Springer Nature |
| Total Pages | : 659 |
| Release | : 2020-06-10 |
| Genre | : Technology & Engineering |
| ISBN | : 9811554447 |
This book highlights peer reviewed articles from the 1st International Conference on Renewable Energy and Energy Conversion, ICREEC 2019, held at Oran in Algeria. It presents recent advances, brings together researchers and professionals in the area and presents a platform to exchange ideas and establish opportunities for a sustainable future. Topics covered in this proceedings, but not limited to, are photovoltaic systems, bioenergy, laser and plasma technology, fluid and flow for energy, software for energy and impact of energy on the environment.
| Author | : Michael S Shur |
| Publisher | : World Scientific |
| Total Pages | : 774 |
| Release | : 2006-08-10 |
| Genre | : Technology & Engineering |
| ISBN | : 9814477478 |
Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues.This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies.
| Author | : Michael Shur |
| Publisher | : World Scientific |
| Total Pages | : 342 |
| Release | : 2006 |
| Genre | : Technology & Engineering |
| ISBN | : 9812568352 |
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices ? power switching Schottky diodes and high temperature MESFETs ? are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
| Author | : Sergey Rumyantsev |
| Publisher | : World Scientific |
| Total Pages | : 342 |
| Release | : 2006-07-25 |
| Genre | : Technology & Engineering |
| ISBN | : 981447777X |
After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
