Atomic Structure And Defects Of Iii V Compound Semiconductor Strained Layer Superlattices For Infrared Detection
Download Atomic Structure And Defects Of Iii V Compound Semiconductor Strained Layer Superlattices For Infrared Detection full books in PDF, epub, and Kindle. Read online free Atomic Structure And Defects Of Iii V Compound Semiconductor Strained Layer Superlattices For Infrared Detection ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Materials Science and Technology: Strained-Layer Superlattices
Author | : |
Publisher | : Academic Press |
Total Pages | : 443 |
Release | : 1991-02-20 |
Genre | : Technology & Engineering |
ISBN | : 0080864309 |
The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this two-volume survey offers a comprehensive discussion of the physics of strained-layer superlattices (Volume 32), as well as detailing fabrication technology and applications of the material (Volume 33). Although each volume is edited to stand alone, the two books combine to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.
Compound Semiconductor Radiation Detectors
Author | : Alan Owens |
Publisher | : Taylor & Francis |
Total Pages | : 570 |
Release | : 2016-04-19 |
Genre | : Science |
ISBN | : 1439873135 |
For many applications, compound semiconductors are now viable competitors to elemental semiconductors because of their wide range of physical properties. This book describes all aspects of radiation detection and measurement using compound semiconductors, including crystal growth, detector fabrication, contacting, and spectroscopic performance (with particular emphasis on the X- and gamma-ray regimes). A concentrated reference for researchers in various disciplines as well as graduate students in specialized courses, the text outlines the potential and limitations of semiconductor detectors.
Band Structures of InAsSb Strained-layer Superlattices for Long-wavelength Infrared Detectors
Author | : Lifeng Liu |
Publisher | : |
Total Pages | : 78 |
Release | : 1994 |
Genre | : Superlattices as materials |
ISBN | : |
Semiconductor Materials for Optoelectronics and LTMBE Materials
Author | : J. P. Hirtz |
Publisher | : |
Total Pages | : 376 |
Release | : 1993 |
Genre | : Science |
ISBN | : |
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; and polymers for optoelectrics. Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.