Handbook of Magnetic Materials

Handbook of Magnetic Materials
Author: K.H.J. Buschow
Publisher: Gulf Professional Publishing
Total Pages: 446
Release: 2002-09-20
Genre: Science
ISBN: 9780444511447

Magnetoelectronics is a novel and rapidly developing field. This new field is frequently referred to as spin-electronics or spintronics. It includes spin-utilizing devices that need neither a magnetic field nor magnetic materials. In semiconductor devices, the spin of the carriers has only played a very modest role so far because well established semiconductor devices are non-magnetic and show only negligible effects of spin. Nanoscale thin films and multilayers, nanocrystalline magnetic materials, granular films, and amorphous alloys have attracted much attention in the last few decades, in the field of basic research as well as in the broader field of materials science. Such heterogeneous materials display uncommon magnetic properties that virtually do no occur in bulk materials. This is true, in particular with respect to surface (interface) magnetic anisotropy and surface (interface) magnetostrictive strains and giant magnetoresistance. The local atomic arrangement at the interface differs strongly from that in the bulk. The local symmetry is lowered, so that some interactions are changed or are missing altogether. The interface atoms may envisaged as forming a new phase and some properties characteristic of this phase may become predominant for the entire system. This becomes particularly evident in the case of interfacial magnetostriction which can lead to a decrease (almost to zero) or to an increase(over the bulk value) of the resulting magnetostriction of the nanoscale system. There are various forms of the interplay of magnetism and superconductivity, which can be divided into competition and coexistence phenomena. For instance, a strong competition is found in high-Tc cuprates. In these materials, depending on the doping rate, either Neel-type antiferromagnetism moments (e.g. from 4f-elements) with superconductivity is known to occur in systems where the concentration of these moments is sufficiently small or where they are antiferromagnetically ordered and only weakly coupled to the conduction electrons. During the years, intermetallic gadolinium compounds have adopted a special position in the study of 4f electron magnetism. The reason for this is the fact that the gadolinium moment consists only of a pure spin moment, orbital contributions to the moment being absent. As a consequence, gadolinium compounds have been regarded as ideal test benches for studying exchange interactions, free from complications due to crystal effects. Volume 14 of the Handbook of Magnetic Materials, as the preceding volumes, has a dual purpose. As a textbook it is intended to be of assistance to those who wish to be introduced to a given topic in the field of magnetism without the need to read the vast amount of literature published. As a work of reference it is intended for scientists active in magnetism research. To this dual purpose, volume 14 of the Handbook is composed of topical review articles written by leading authorities. In each of these articles an extensive description is given in graphical as well as tabular form, much emphasis being placed on the discussion of the experimental material in the framework of physics, chemistry and material science.

Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology
Author:
Publisher: Newnes
Total Pages: 3572
Release: 2011-01-28
Genre: Science
ISBN: 0080932282

Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Dopants and Defects in Semiconductors

Dopants and Defects in Semiconductors
Author: Matthew D. McCluskey
Publisher: CRC Press
Total Pages: 373
Release: 2018-02-19
Genre: Science
ISBN: 1351977989

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ―Materials Today "... well written, with clear, lucid explanations ..." ―Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.

Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures
Author: Giovanni Agostini
Publisher: Elsevier
Total Pages: 501
Release: 2011-08-11
Genre: Science
ISBN: 0080558151

In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors

Handbook of Spintronic Semiconductors

Handbook of Spintronic Semiconductors
Author: Weimin Chen
Publisher: CRC Press
Total Pages: 348
Release: 2019-05-08
Genre: Technology & Engineering
ISBN: 042953373X

This book provides an in-depth review of the rapidly developing field of spintronic semiconductors. It covers a broad range of topics, including growth and basic physical properties of diluted magnetic semiconductors based on II-VI, III-V and IV semiconductors, recent developments in theory and experimental techniques and potential device applications; its aim is to provide postgraduate students, researchers and engineers a comprehensive overview of our present knowledge and future perspectives of spintronic semiconductors.

Scanning Probe Microscopy in Nanoscience and Nanotechnology 2

Scanning Probe Microscopy in Nanoscience and Nanotechnology 2
Author: Bharat Bhushan
Publisher: Springer Science & Business Media
Total Pages: 823
Release: 2010-12-17
Genre: Technology & Engineering
ISBN: 3642104975

This book presents the physical and technical foundation of the state of the art in applied scanning probe techniques. It constitutes a timely and comprehensive overview of SPM applications. The chapters in this volume relate to scanning probe microscopy techniques, characterization of various materials and structures and typical industrial applications, including topographic and dynamical surface studies of thin-film semiconductors, polymers, paper, ceramics, and magnetic and biological materials. The chapters are written by leading researchers and application scientists from all over the world and from various industries to provide a broader perspective.

Processing of 'Wide Band Gap Semiconductors

Processing of 'Wide Band Gap Semiconductors
Author: S. J. Pearton
Publisher: Cambridge University Press
Total Pages: 593
Release: 2013-01-15
Genre: Technology & Engineering
ISBN: 0080946755

Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.