AACGE 2017 Program and Abstract
Author | : AACG |
Publisher | : Coe Truman International, LLC |
Total Pages | : 706 |
Release | : 2017-07-27 |
Genre | : |
ISBN | : |
AACGE 2017 Program and Abstract - American Conference on Crystal Growth (AACG)
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Author | : AACG |
Publisher | : Coe Truman International, LLC |
Total Pages | : 706 |
Release | : 2017-07-27 |
Genre | : |
ISBN | : |
AACGE 2017 Program and Abstract - American Conference on Crystal Growth (AACG)
Author | : Hajime Asahi |
Publisher | : John Wiley & Sons |
Total Pages | : 510 |
Release | : 2019-04-15 |
Genre | : Science |
ISBN | : 111935501X |
Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
Author | : Govindhan Dhanaraj |
Publisher | : Springer Science & Business Media |
Total Pages | : 1823 |
Release | : 2010-10-20 |
Genre | : Science |
ISBN | : 3540747613 |
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author | : B. P. Sobolev |
Publisher | : Institut d'Estudis Catalans |
Total Pages | : 540 |
Release | : 2000 |
Genre | : Rare earth fluorides |
ISBN | : 9788472835184 |
Author | : Peter Capper |
Publisher | : IET |
Total Pages | : 648 |
Release | : 1994 |
Genre | : Science |
ISBN | : 9780852968802 |
This highly structured volume contains sections on growth and device aspects of mercury cadmium telluride (MCT).
Author | : Tatau Nishinaga |
Publisher | : |
Total Pages | : 755 |
Release | : 1994 |
Genre | : |
ISBN | : 9780444633033 |
Author | : Jian V. Li |
Publisher | : Pan Stanford |
Total Pages | : 0 |
Release | : 2018 |
Genre | : Science |
ISBN | : 9781315150130 |
Capacitance spectroscopy refers to techniques for characterizing the electrical properties of semiconductor materials, junctions, and interfaces, all from the dependence of device capacitance on frequency, time, temperature, and electric potential. This book includes 15 chapters written by world-recognized, leading experts in the field, academia, national institutions, and industry, divided into four sections: Physics, Instrumentation, Applications, and Emerging Techniques. The first section establishes the fundamental framework relating capacitance and its allied concepts of conductance, admittance, and impedance to the electrical and optical properties of semiconductors. The second section reviews the electronic principles of capacitance measurements used by commercial products, as well as custom apparatus. The third section details the implementation in various scientific fields and industries, such as photovoltaics and electronic and optoelectronic devices. The last section presents the latest advances in capacitance-based electrical characterization aimed at reaching nanometer-scale resolution.