2016 Ieee International Electron Devices Meeting Iedm
Download 2016 Ieee International Electron Devices Meeting Iedm full books in PDF, epub, and Kindle. Read online free 2016 Ieee International Electron Devices Meeting Iedm ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
| Author | : Qing Luo |
| Publisher | : CRC Press |
| Total Pages | : 107 |
| Release | : 2023-04-13 |
| Genre | : Technology & Engineering |
| ISBN | : 1000888401 |
This book offers a thorough exploration of the three-dimensional integration of resistive memory in all aspects, from the materials, devices, array-level issues, and integration structures to its applications. Resistive random-access memory (RRAM) is one of the most promising candidates for next-generation nonvolatile memory applications owing to its superior characteristics including simple structure, high switching speed, low power consumption, and compatibility with standard complementary metal oxide semiconductor (CMOS) process. To achieve large-scale, high-density integration of RRAM, the 3D cross array is undoubtedly the ideal choice. This book introduces the 3D integration technology of RRAM, and breaks it down into five parts: 1: Associative Problems in Crossbar array and 3D architectures; 2: Selector Devices and Self-Selective Cells; 3: Integration of 3D RRAM; 4: Reliability Issues in 3D RRAM; 5: Applications of 3D RRAM beyond Storage. The book aspires to provide a relevant reference for students, researchers, engineers, and professionals working with resistive random-access memory or those interested in 3D integration technology in general.
| Author | : Massimo Rudan |
| Publisher | : Springer Nature |
| Total Pages | : 1680 |
| Release | : 2022-11-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030798275 |
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
| Author | : Li Tao |
| Publisher | : Elsevier |
| Total Pages | : 349 |
| Release | : 2020-06-12 |
| Genre | : Technology & Engineering |
| ISBN | : 012818387X |
Emerging 2D Materials and Devices for the Internet of Things: Information, Sensing and Energy Applications summarizes state-of-the-art technologies in applying 2D layered materials, discusses energy and sensing device applications as essential infrastructure solutions, and explores designs that will make internet-of-things devices faster, more reliable and more accessible for the creation of mass-market products. The book focuses on information, energy and sensing applications, showing how different types of 2D materials are being used to create a new generation of products and devices that harness the capabilities of wireless technology in an eco-efficient, reliable way. This book is an important resource for both materials scientists and engineers, who are designing new wireless products in a variety of industry sectors. - Explores how 2D materials are being used to create faster and more reliable wireless network solutions - Discusses how graphene-based nanocomposites are being used for energy harvesting and storage applications - Outlines the major challenges for integrating 2D materials in electronic sensing devices
| Author | : Yoshio Nishi |
| Publisher | : Woodhead Publishing |
| Total Pages | : 664 |
| Release | : 2019-06-15 |
| Genre | : Technology & Engineering |
| ISBN | : 0081025858 |
Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory
| Author | : Yang Chai |
| Publisher | : Springer Nature |
| Total Pages | : 237 |
| Release | : 2022-10-27 |
| Genre | : Technology & Engineering |
| ISBN | : 3031115066 |
This book provides a detailed introduction to near-sensor and in-sensor computing paradigms, their working mechanisms, development trends and future directions. The authors also provide a comprehensive review of current progress in this area, analyze existing challenges in the field, and offer possible solutions. Readers will benefit from the discussion of computing approaches that intervene in the vicinity of or inside sensory networks to help process data more efficiently, decreasing power consumption and reducing the transfer of redundant data between sensing and processing units. Provides readers with a detailed introduction to the near-sensor and in-sensor computing paradigms; Includes in-depth and comprehensive summaries of the state-of-the-art development in this field; Discusses and compares various neuromorphic sensors and neural networks: Describes integration technology for near-/in-sensor computing; Reveals the relationship between near-/in-sensor computing and other computing paradigms, such as neuromorphic computing, edge computing, intuitive computing, and in-memory computing.
| Author | : Chinmay K. Maiti |
| Publisher | : CRC Press |
| Total Pages | : 340 |
| Release | : 2022-11-17 |
| Genre | : Technology & Engineering |
| ISBN | : 1000638057 |
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
| Author | : Thomas Kürner |
| Publisher | : Springer Nature |
| Total Pages | : 510 |
| Release | : 2021-12-07 |
| Genre | : Science |
| ISBN | : 3030737381 |
This book describes the fundamentals of THz communications, spanning the whole range of applications, propagation and channel models, RF transceiver technology, antennas, baseband techniques, and networking interfaces. The requested data rate in wireless communications will soon reach from 100 Gbit/s up to 1 Tbps necessitating systems with ultra-high bandwidths of several 10s of GHz which are available only above 200 GHz. In the last decade, research at these frequency bands has made significant progress, enabling mature experimental demonstrations of so-called THz communications, which are thus expected to play a vital role in future wireless networks. In addition to chapters by leading experts on the theory, modeling, and implementation of THz communication technology, the book also features the latest experimental results and addresses standardization and regulatory aspects. This book will be of interest to both academic researchers and engineers in the telecommunications industry.
| Author | : Young Suh Song |
| Publisher | : CRC Press |
| Total Pages | : 167 |
| Release | : 2023-10-31 |
| Genre | : Technology & Engineering |
| ISBN | : 1000933334 |
This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable devices, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistors: Physics, Design, Modeling and Applications discusses low-power semiconductor technology and addresses state-of-the-art techniques such as negative capacitance field effect transistors and tunnel field effect transistors. The book is split into three parts. The first part discusses the foundations of low-power electronics, including the challenges and demands and concepts such as subthreshold swing. The second part discusses the basic operations of negative capacitance field effect transistors (NCFETs) and tunnel field effect transistors (TFETs). The third part covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be a one-stop guide for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices such as NC-FET, FinFET, tunnel FET, and device–circuit codesign.
| Author | : Michael Hoffmann |
| Publisher | : |
| Total Pages | : 170 |
| Release | : 2020 |
| Genre | : |
| ISBN | : 3752633697 |
| Author | : Andrea Redaelli |
| Publisher | : Woodhead Publishing |
| Total Pages | : 364 |
| Release | : 2022-06-07 |
| Genre | : Technology & Engineering |
| ISBN | : 0128209461 |
Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory
