Zero-Phonon Lines

Zero-Phonon Lines
Author: Olev Sild
Publisher: Springer Science & Business Media
Total Pages: 191
Release: 2012-12-06
Genre: Science
ISBN: 3642736386

Lasers are playing a more and more dominant role in modern optical spec troscopy, offering an increased potential for high resolution and, thus, for more detailed spectroscopic information on dynamic and structural param eters. This book on Zero-Phonon Lines and Spectral Hole Burning in Spec troscopy and Photochemistry gives a concise and very useful survey of some of the pioneering and current work on solid state spectroscopy of various groups in the USSR. It focusses on the optical Mossbauer analogue, the "zero-phonon line", and "hole burning" spectroscopy, a method which increases the resolu tion well beyond the zero-phonon linewidth. In this conte. . 'Ct, the present work is complementary to Persistent Spectral Hole-Burning: Science and Applica tions (ed. by W.E. Moerner, Springer, Berlin, Heidelberg 1988), which deals in more detail with the various aspects of laser spectroscopy with ultrahigh spectral resolution. Zero-phonon lines and an understanding of the various phonon coupling mechanisms which are treated in this book are a prerequi site for applying and understanding techniques of ultrahigh resolution such as hole-burning or optical echoes. Bayreuth, March 1988 D. Haarer Preface The investigation of zero-phonon lines (ZPLs) is one of the foremost and most informative fields of present-day condensed-matter spectroscopy. Along with its definite function in physical cognition and investigation methods, the spectroscopy of ZPLs is also gaining purely practical applications. This is due to the fact that ZPLs are extra-sensitive quantum-mechanical detectors.

Zero-Phonon Line Absorption Spectra of Radiation Damage Centers in Silicon

Zero-Phonon Line Absorption Spectra of Radiation Damage Centers in Silicon
Author:
Publisher:
Total Pages: 105
Release: 1972
Genre:
ISBN:

Infrared absorption measurements were made for n-type silicon samples irradiated with 1 MeV electrons at room temperature. The absorption spectra in the range 1-3 microns were recorded at both liquid nitrogen and liquid helium temperatures. Three families of zero-phonon lines and phonon-assisted sideband structure were seen which correspond to those seen in luminescence spectra. The families at 0.4891 eV and 0.7898 eV were seen only in pulled samples, while the family at 0.9702 eV was seen in both pulled and float-zone samples. A dose rate study indicated that all three families are independent of each other. The zero-phonon lines at 0.7898 eV, 0.7948 eV, and 0.4891 eV may follow of the divacancy.

Progress in Optics

Progress in Optics
Author:
Publisher: Elsevier
Total Pages: 495
Release: 1996-06-13
Genre: Science
ISBN: 0080879950

Volume XXXV contains six review articles.The first article is a discussion on transverse light patterns in non-linear media, lasers and wide aperture interferometers. The next article deals with the detection and spectroscopic studies of single molecules in transparent solids at low temperature. The isolated spectral line of a single molecule makes it possible to perform basic quantum measurements, and allows probing in unprecedented detail of the surrounding solid matrix. The article also includes some suggestions for future research in this field.The next article reviews interferometric techniques for retrieving multispectral images with a large number of spectral channels. Special attention is paid to the theory of interferometric multispectral imaging which unifies the theories of coherence based image retrieval and spectrum recovery. Various techniques are compared, especially in terms of signal-to-noise-ratio.

Identification of Defects in Semiconductors

Identification of Defects in Semiconductors
Author:
Publisher: Academic Press
Total Pages: 449
Release: 1998-10-27
Genre: Science
ISBN: 008086449X

GENERAL DESCRIPTION OF THE SERIESSince its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. GENERAL DESCRIPTION OF THE VOLUMEThis volume has contributions on Advanced Characterization Techniques with a focus on defect identification. The combination of beam techniques with electrical and optical characterization has not been discussed elsewhere.

Laser Optics of Condensed Matter

Laser Optics of Condensed Matter
Author: J. Birman
Publisher: Springer Science & Business Media
Total Pages: 539
Release: 2012-12-06
Genre: Science
ISBN: 1461573416

The Third Binational USA-USSR Symposium titled "Laser Optics of Con densed Matter" was held in Leningrad 1 June - 5 June 1987. This volume con tains the full text of 64 papers presented at (or prepared for) the Symposium in both plenary and poster sessions. This Symposium reestablished the very productive series of "Light Scattering" Binational Symposia which were initi ated in Moscow in 1975. Unfortunately there was an eight-year hiatus follow ing the Second Symposium in New York (1979). This interval, caused by serious chilling of the climate of USA-USSR collaboration, deprived the active scien tists on both sides of the opportunity to meet and interact in the active format of a conference. During this eight year interval there has been very rapid and intense development of scientific activity in the general area of laser optics phe nomena. The development of ultrafast laser sources has permitted rapid advances in time resolved spectroscopy and ultrafast processes; the field of optical bistability and strong nonlinearity became a hot topic; and intense work is now underway to clarify ideas of photon localization. These new dev elopments complement many advances in the study of low dimensional systems such as surfaces, new work on phase transitions, and novel studies of elemen tary excitations such as polariton-excitons in localized environments such as quantum wells and heterojunctions.