X-ray Scattering From Semiconductors (2nd Edition)

X-ray Scattering From Semiconductors (2nd Edition)
Author: Paul F Fewster
Publisher: World Scientific
Total Pages: 315
Release: 2003-07-07
Genre: Technology & Engineering
ISBN: 178326098X

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

X-ray Scattering From Semiconductors

X-ray Scattering From Semiconductors
Author: Paul F Fewster
Publisher: World Scientific
Total Pages: 303
Release: 2000-10-27
Genre: Science
ISBN: 1783262079

X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, etc.This book provides a thorough description of the techniques involved in obtaining that information, including X-ray diffractometers and their associated instrument functions, data collection methods, and the simulation of the diffraction patterns observed. Also presented are examples and procedures for interpreting the data to build a picture of the sample, much of which will be common to materials other than semiconductors./a

X-Ray Scattering from Semiconductors and Other Materials

X-Ray Scattering from Semiconductors and Other Materials
Author: Paul F. Fewster
Publisher: World Scientific
Total Pages: 510
Release: 2015
Genre: Science
ISBN: 9814436933

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included. This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

X-Ray Scattering from Semiconductors (2n

X-Ray Scattering from Semiconductors (2n
Author: Paul F. Fewster
Publisher: Imperial College Pr
Total Pages: 299
Release: 2003
Genre: Science
ISBN: 9781860943607

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

Two-dimensional X-ray Diffraction

Two-dimensional X-ray Diffraction
Author: Bob B. He
Publisher: John Wiley & Sons
Total Pages: 492
Release: 2018-05-18
Genre: Science
ISBN: 1119356067

An indispensable resource for researchers and students in materials science, chemistry, physics, and pharmaceuticals Written by one of the pioneers of 2D X-Ray Diffraction, this updated and expanded edition of the definitive text in the field provides comprehensive coverage of the fundamentals of that analytical method, as well as state-of-the art experimental methods and applications. Geometry convention, x-ray source and optics, two-dimensional detectors, diffraction data interpretation, and configurations for various applications, such as phase identification, texture, stress, microstructure analysis, crystallinity, thin film analysis, and combinatorial screening are all covered in detail. Numerous experimental examples in materials research, manufacture, and pharmaceuticals are provided throughout. Two-dimensional x-ray diffraction is the ideal, non-destructive analytical method for examining samples of all kinds including metals, polymers, ceramics, semiconductors, thin films, coatings, paints, biomaterials, composites, and more. Two-Dimensional X-Ray Diffraction, Second Edition is an up-to-date resource for understanding how the latest 2D detectors are integrated into diffractometers, how to get the best data using the 2D detector for diffraction, and how to interpret this data. All those desirous of setting up a 2D diffraction in their own laboratories will find the author’s coverage of the physical principles, projection geometry, and mathematical derivations extremely helpful. Features new contents in all chapters with most figures in full color to reveal more details in illustrations and diffraction patterns Covers the recent advances in detector technology and 2D data collection strategies that have led to dramatic increases in the use of two-dimensional detectors for x-ray diffraction Provides in-depth coverage of new innovations in x-ray sources, optics, system configurations, applications and data evaluation algorithms Contains new methods and experimental examples in stress, texture, crystal size, crystal orientation and thin film analysis Two-Dimensional X-Ray Diffraction, Second Edition is an important working resource for industrial and academic researchers and developers in materials science, chemistry, physics, pharmaceuticals, and all those who use x-ray diffraction as a characterization method. Users of all levels, instrument technicians and X-ray laboratory managers, as well as instrument developers, will want to have it on hand.

X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures

X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures
Author: Martin Schmidbauer
Publisher: Springer Science & Business Media
Total Pages: 224
Release: 2004-01-09
Genre: Science
ISBN: 9783540201793

This monograph represents a critical survey of the outstanding capabilities of X-ray diffuse scattering for the structural characterization of mesoscopic material systems. The mesoscopic regime comprises length scales ranging from a few up to some hundreds of nanometers. It is of particular relevance at semiconductor layer systems where, for example, interface roughness or low-dimensional objects such as quantum dots and quantum wires have attracted much interest. An extensive overview of the present state-of-the-art theory of X-ray diffuse scattering at mesoscopic structures is given followed by a valuable description of various experimental techniques. Selected up-to-date examples are discussed. The aim of the present book is to combine aspects of self-organized growth of mesoscopic structures with corresponding X-ray diffuse scattering experiments.

High-Resolution X-Ray Scattering

High-Resolution X-Ray Scattering
Author: Ullrich Pietsch
Publisher: Springer Science & Business Media
Total Pages: 410
Release: 2013-03-09
Genre: Technology & Engineering
ISBN: 1475740506

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.