X-ray Scattering From Semiconductors (2nd Edition)

X-ray Scattering From Semiconductors (2nd Edition)
Author: Paul F Fewster
Publisher: World Scientific
Total Pages: 315
Release: 2003-07-07
Genre: Technology & Engineering
ISBN: 178326098X

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

X-ray Scattering From Semiconductors

X-ray Scattering From Semiconductors
Author: Paul F Fewster
Publisher: World Scientific
Total Pages: 303
Release: 2000-10-27
Genre: Science
ISBN: 1783262079

X-ray scattering is used extensively to provide detailed structural information about materials. Semiconductors have benefited from X-ray scattering techniques as an essential feedback method for crystal growth, including compositional and thickness determination of thin layers. The methods have been developed to reveal very detailed structural information concerning material quality, interface structure, relaxation, defects, surface damage, etc.This book provides a thorough description of the techniques involved in obtaining that information, including X-ray diffractometers and their associated instrument functions, data collection methods, and the simulation of the diffraction patterns observed. Also presented are examples and procedures for interpreting the data to build a picture of the sample, much of which will be common to materials other than semiconductors./a

X-Ray Scattering from Semiconductors (2n

X-Ray Scattering from Semiconductors (2n
Author: Paul F. Fewster
Publisher: Imperial College Pr
Total Pages: 299
Release: 2003
Genre: Science
ISBN: 9781860943607

This book presents a practical guide to the analysis of materials and includes a thorough description of the underlying theories and instrumental aberrations caused by real experiments. The main emphasis concerns the analysis of thin films and multilayers, primarily semiconductors, although the techniques are very general. Semiconductors can be very perfect composite crystals and therefore their study can lead to the largest volume of information, since X-ray scattering can assess the deviation from perfection.The description is intentionally conceptual so that the reader can grasp the real processes involved. In this way the analysis becomes significantly easier, making the reader aware of misleading artifacts and assisting in the determination of a more complete and reliable analysis. The theory of scattering is very important and is covered in such a way that the assumptions are clear. Greatest emphasis is placed on the dynamical diffraction theory including new developments extending its applicability to reciprocal space mapping and modelling samples with relaxed and distorted interfaces.A practical guide to the measurement of diffraction patterns, including the smearing effects introduced to the measurement, is also presented.

X-Ray Scattering from Semiconductors and Other Materials

X-Ray Scattering from Semiconductors and Other Materials
Author: Paul F. Fewster
Publisher: World Scientific
Total Pages: 510
Release: 2015
Genre: Science
ISBN: 9814436933

This third edition has been extended considerably to incorporate more information on instrument influences on the interpretation of X-ray scattering profiles and reciprocal space maps. Another significant inclusion is on the scattering from powder samples, covering a new theoretical approach that explains features that conventional theory cannot. The new edition includes some of the latest methodologies and theoretical treatments, including the latest thinking on dynamical theory and diffuse scattering. Recent advances in detectors also present new opportunities for rapid data collection and some very different approaches in data collection techniques; the possibilities associated with these advances will be included. This edition should be of interest to those who use X-ray scattering to understand more about their samples, so that they can make a better judgment of the parameter and confidence levels in their analyses, and how the combination of instrument, sample and detection should be considered as a whole to ensure this.

X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures

X-Ray Diffuse Scattering from Self-Organized Mesoscopic Semiconductor Structures
Author: Martin Schmidbauer
Publisher: Springer Science & Business Media
Total Pages: 224
Release: 2004-01-09
Genre: Science
ISBN: 9783540201793

This monograph represents a critical survey of the outstanding capabilities of X-ray diffuse scattering for the structural characterization of mesoscopic material systems. The mesoscopic regime comprises length scales ranging from a few up to some hundreds of nanometers. It is of particular relevance at semiconductor layer systems where, for example, interface roughness or low-dimensional objects such as quantum dots and quantum wires have attracted much interest. An extensive overview of the present state-of-the-art theory of X-ray diffuse scattering at mesoscopic structures is given followed by a valuable description of various experimental techniques. Selected up-to-date examples are discussed. The aim of the present book is to combine aspects of self-organized growth of mesoscopic structures with corresponding X-ray diffuse scattering experiments.

High-Resolution X-Ray Scattering

High-Resolution X-Ray Scattering
Author: Ullrich Pietsch
Publisher: Springer Science & Business Media
Total Pages: 432
Release: 2004-08-27
Genre: Technology & Engineering
ISBN: 9780387400921

During the last 20 years interest in high-resolution x-ray diffractometry and reflectivity has grown as a result of the development of the semiconductor industry and the increasing interest in material research of thin layers of magnetic, organic, and other materials. For example, optoelectronics requires a subsequent epitaxy of thin layers of different semiconductor materials. Here, the individuallayer thicknesses are scaled down to a few atomic layers in order to exploit quantum effects. For reasons of electronic and optical confinement, these thin layers are embedded within much thicker cladding layers or stacks of multilayers of slightly different chemical composition. It is evident that the interface quality of those quantum weHs is quite important for the function of devices. Thin metallic layers often show magnetic properties which do not ap pear for thick layers or in bulk material. The investigation of the mutual interaction of magnetic and non-magnetic layers leads to the discovery of colossal magnetoresistance, for example. This property is strongly related to the thickness and interface roughness of covered layers.

The Materials Physics Companion, 2nd Edition

The Materials Physics Companion, 2nd Edition
Author: Anthony C. Fischer-Cripps
Publisher: CRC Press
Total Pages: 240
Release: 2014-08-14
Genre: Science
ISBN: 1466517824

Understand the Physics of the Solid State Updated and expanded with new topics, The Materials Physics Companion, 2nd Edition puts the physics of the solid state within the reach of students by offering an easy-to-navigate pathway from basic knowledge through to advanced concepts. This edition illustrates how electrical and magnetic properties of matter arise from the basic principles of quantum mechanics in a way that is accessible to science and engineering students. A Convenient, Student-Friendly Format Rich with Diagrams and Clear Explanations The book uses the unique signature style of the author’s other companion books, providing detailed graphics, simple and clear explanations of difficult concepts, and annotated mathematical treatments. It covers quantum mechanics, x-ray analysis, solid-state physics, the mechanical and thermal properties of solids, the electrical and magnetic properties of solids, and superconductivity, assuming no prior knowledge of these advanced areas. Suitable for undergraduate students in science and engineering, the book is also a handy refresher for professional scientists and educators. Be sure to check out the author’s other companion books: The Mathematics Companion: Mathematical Methods for Physicists and Engineers, 2nd Edition The Physics Companion, 2nd Edition The Electronics Companion: Devices and Circuits for Physicists and Engineers, 2nd Edition The Chemistry Companion

Semiconductor Heteroepitaxy: Growth Characterization And Device Applications

Semiconductor Heteroepitaxy: Growth Characterization And Device Applications
Author: B Gil
Publisher: World Scientific
Total Pages: 714
Release: 1995-12-15
Genre:
ISBN: 9814548421

This book develops the mathematics of differential geometry in a way more intelligible to physicists and other scientists interested in this field. This book is basically divided into 3 levels; level 0, the nearest to intuition and geometrical experience, is a short summary of the theory of curves and surfaces; level 1 repeats, comments and develops upon the traditional methods of tensor algebra analysis and level 2 is an introduction to the language of modern differential geometry. A final chapter (chapter IV) is devoted to fibre bundles and their applications to physics. Exercises are provided to amplify the text material.