Vlsi Electronics Materials And Process Characterization
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| Author | : Norman G. Einspruch |
| Publisher | : Academic Press |
| Total Pages | : 614 |
| Release | : 2014-12-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1483217736 |
VLSI Electronics: Microstructure Science, Volume 6: Materials and Process Characterization addresses the problem of how to apply a broad range of sophisticated materials characterization tools to materials and processes used for development and production of very large scale integration (VLSI) electronics. This book discusses the various characterization techniques, such as Auger spectroscopy, secondary ion mass spectroscopy, X-ray topography, transmission electron microscopy, and spreading resistance. The systematic approach to the technologies of VLSI electronic materials and device manufacture are also considered. This volume is beneficial to materials scientists, chemists, and engineers who are commissioned with the responsibility of developing and implementing the production of materials and devices to support the VLSI era.
| Author | : Norman G. Einspruch |
| Publisher | : |
| Total Pages | : 624 |
| Release | : 1981 |
| Genre | : Integrated circuits |
| ISBN | : |
| Author | : David Louis Harame |
| Publisher | : The Electrochemical Society |
| Total Pages | : 1242 |
| Release | : 2004 |
| Genre | : Science |
| ISBN | : 9781566774208 |
| Author | : Norman G. Einspruch |
| Publisher | : |
| Total Pages | : 601 |
| Release | : 1983 |
| Genre | : Technology & Engineering |
| ISBN | : 9780122341069 |
| Author | : S. Mahajan |
| Publisher | : Elsevier |
| Total Pages | : 607 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1483286576 |
The development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
| Author | : Abraham Landzberg |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 663 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461520290 |
The world of microelectronics is filled with cusses measurement systems, manufacturing many success stories. From the use of semi control techniques, test, diagnostics, and fail ure analysis. It discusses methods for modeling conductors for powerful desktop computers to their use in maintaining optimum engine per and reducing defects, and for preventing de formance in modem automobiles, they have fects in the first place. The approach described, clearly improved our daily lives. The broad while geared to the microelectronics world, has useability of the technology is enabled, how applicability to any manufacturing process of similar complexity. The authors comprise some ever, only by the progress made in reducing their cost and improving their reliability. De of the best scientific minds in the world, and fect reduction receives a significant focus in our are practitioners of the art. The information modem manufacturing world, and high-quality captured here is world class. I know you will diagnostics is the key step in that process. find the material to be an excellent reference in of product failures enables step func Analysis your application. tion improvements in yield and reliability. which works to reduce cost and open up new Dr. Paul R. Low applications and technologies. IBM Vice President and This book describes the process ofdefect re of Technology Products General Manager duction in the microelectronics world.
| Author | : Dieter K. Schroder |
| Publisher | : John Wiley & Sons |
| Total Pages | : 800 |
| Release | : 2015-06-29 |
| Genre | : Technology & Engineering |
| ISBN | : 0471739065 |
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
| Author | : Francois D'heurle |
| Publisher | : World Scientific |
| Total Pages | : 390 |
| Release | : 2000-12-18 |
| Genre | : Science |
| ISBN | : 9814492183 |
Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications.The 16th Course of the International School of Solid State Physics, held in Erice (Italy) in the late spring of 1999, was intended to break artificial barriers between disciplines, and to gather people concerned with the properties and applications of silicides, regardless of the formal fields to which they belong, or of the practical goals they pursue. This book is therefore concerned with theory as well as applications, metallurgy as well as physics, and materials science as well as microelectronics.
| Author | : Joachim Bargon |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 367 |
| Release | : 2013-03-09 |
| Genre | : Science |
| ISBN | : 1468448471 |
The papers collected in this volume were presented at the International Symposium on Methods and Materials in Microelectronic Technology. This symposium was sponsored by IBM Germany, and it was held September 29 - October 1, 1982, in Bad Neuenahr, West Germany. The progress of semiconductor and microelectronic technology has become so rapid and the field so sophisticated that it is imperative to exchange the latest insight gained as frequently as it can be accomplished. In addition, it is peculiar for this field that the bulk of the investigations are carried out at industrial research and development laboratories, which makes some of the results less readily accessible. Because of these circumstances, the academic community, which among other things, is supposed to communicate the prog ress in this field to students of different disciplines, finds it rather difficult to stay properly informed. It was the intent of this IBM sponsored symposium to bring together key scientists from academic institutions, primarily from Europe, with principal investigators of the industrial scene. Accordingly, this symposium exposed technologists to scientists and vice versa. Scientific advances often lead directly to technological innovations. In turn, new technologies are often arrived at empirically and, because of that, are initially poorly understood. Scientific inquiry then attempts to probe these processes and phenomena in order to achieve a better understanding. Thus science and technology are intricately interconnected, and it is important that technical exchange between technolo gists and scientists is facilitated, since the problems are typically interdiscipli nary in nature.
| Author | : Norman G. Einspruch |
| Publisher | : Academic Press |
| Total Pages | : 544 |
| Release | : 2014-12-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1483217752 |
VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
