Uniaxial Stress Effects On The Electronic Properties Of Gallium Arsenide Aluminum Gallium Arsenide Single Double Barrier Heterostructures
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Properties of Aluminium Gallium Arsenide
Author | : Sadao Adachi |
Publisher | : IET |
Total Pages | : 354 |
Release | : 1993 |
Genre | : Aluminium alloys |
ISBN | : 9780852965580 |
The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Molecular-beam Epitaxial Growth and Characterization of Aluminum Gallium Arsenide/indium Gallium Arsenide Single Quantum-well Modulation-doped Field-effect Transistor Structures
Author | : David Constantine Radulescu |
Publisher | : |
Total Pages | : 578 |
Release | : 1988 |
Genre | : Doped semiconductors |
ISBN | : |
Properties of Gallium Arsenide
Author | : |
Publisher | : INSPEC |
Total Pages | : 370 |
Release | : 1986 |
Genre | : Technology & Engineering |
ISBN | : |
Properties of Lattice-matched and Strained Indium Gallium Arsenide
Author | : Pallab Bhattacharya |
Publisher | : Inst of Engineering & Technology |
Total Pages | : 317 |
Release | : 1993 |
Genre | : Technology & Engineering |
ISBN | : 9780852968659 |
The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.