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| Author | : Josef J. Felver |
| Publisher | : |
| Total Pages | : |
| Release | : 2015 |
| Genre | : Amorphous semiconductors |
| ISBN | : |
Three sets of experiments were conducted using femtosecond transient absorption methods.
| Author | : Susan L. Dexheimer |
| Publisher | : CRC Press |
| Total Pages | : 358 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 142000770X |
The development of new sources and methods in the terahertz spectral range has generated intense interest in terahertz spectroscopy and its application in an array of fields. Presenting state-of-the-art terahertz spectroscopic techniques, Terahertz Spectroscopy: Principles and Applications focuses on time-domain methods based on femtosecond laser sources and important recent applications in physics, materials science, chemistry, and biomedicine. The first section of the book examines instrumentation and methods for terahertz spectroscopy. It provides a comprehensive treatment of time-domain terahertz spectroscopic measurements, including methods for the generation and detection of terahertz radiation, methods for determining optical constants from time-domain measurements, and the use of femtosecond time-resolved techniques. The last two sections explore a variety of applications of terahertz spectroscopy in physics, materials science, chemistry, and biomedicine. With chapters contributed by leading experts in academia, industry, and research, this volume thoroughly discusses methods and applications, setting it apart from other recent books in this emerging terahertz field.
| Author | : Samuel J. Levang |
| Publisher | : |
| Total Pages | : 36 |
| Release | : 2012 |
| Genre | : Silicon alloys |
| ISBN | : |
Hydrogenated amorphous silicon-germanium alloy thin films (a-Si1-xGex:H) were deposited using reactive magnetron sputtering. Dual targets of silicon and germanium were sputtered in an argon + hydrogen atmosphere using RF excitation. Films with x = 0.4 were deposited as a function of substrate temperature and hydrogen partial pressure, and were evaluated by dark and photoconductivity, infrared absorption, and optical transmission. Photosensitivity reached a maximum value of about 4500 between 150 and 200°C. Using the stretching modes in the region of 2000 cm-1, the hydrogen bonding was characterized in terms of the preferential attachment ratio (PA), which represents the ratio between H bonded to Si and H bonded to Ge. The PA shows a systematic increase with increasing temperature, generally independent of hydrogen partial pressure. The interplay between thermodynamic and kinetics effects in determining PA and film quality is discussed.
| Author | : Robert W. Collins |
| Publisher | : |
| Total Pages | : 1118 |
| Release | : 2001-04-10 |
| Genre | : Science |
| ISBN | : |
The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
| Author | : J.D. Joannopoulos |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 370 |
| Release | : 2008-02-29 |
| Genre | : Science |
| ISBN | : 3540388478 |
With contributions by numerous experts
| Author | : Gudrun Kissinger |
| Publisher | : CRC Press |
| Total Pages | : 436 |
| Release | : 2014-12-09 |
| Genre | : Science |
| ISBN | : 1466586648 |
Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
