Transient Induced Latchup In Cmos Integrated Circuits
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| Author | : Ming-Dou Ker |
| Publisher | : John Wiley & Sons |
| Total Pages | : 265 |
| Release | : 2009-07-23 |
| Genre | : Technology & Engineering |
| ISBN | : 0470824085 |
The book all semiconductor device engineers must read to gain a practical feel for latchup-induced failure to produce lower-cost and higher-density chips. Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process. Presents real cases and solutions that occur in commercial CMOS IC chips Equips engineers with the skills to conserve chip layout area and decrease time-to-market Written by experts with real-world experience in circuit design and failure analysis Distilled from numerous courses taught by the authors in IC design houses worldwide The only book to introduce TLU under system-level ESD and EFT tests This book is essential for practicing engineers involved in IC design, IC design management, system and application design, reliability, and failure analysis. Undergraduate and postgraduate students, specializing in CMOS circuit design and layout, will find this book to be a valuable introduction to real-world industry problems and a key reference during the course of their careers.
| Author | : Steven H. Voldman |
| Publisher | : John Wiley & Sons |
| Total Pages | : 1168 |
| Release | : 2021-03-02 |
| Genre | : Technology & Engineering |
| ISBN | : 1119233100 |
A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.
| Author | : Steven H. Voldman |
| Publisher | : John Wiley & Sons |
| Total Pages | : 260 |
| Release | : 2011-04-04 |
| Genre | : Technology & Engineering |
| ISBN | : 1119992656 |
Electrostatic discharge (ESD) continues to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a whole-chip ESD design synthesis approach. It provides a clear insight into the integration of ESD protection networks from a generalist perspective, followed by examples in specific technologies, circuits, and chips. Uniquely both the semiconductor chip integration issues and floorplanning of ESD networks are covered from a ‘top-down' design approach. Look inside for extensive coverage on: integration of cores, power bussing, and signal pins in DRAM, SRAM, CMOS image processing chips, microprocessors, analog products, RF components and how the integration influences ESD design and integration architecturing of mixed voltage, mixed signal, to RF design for ESD analysis floorplanning for peripheral and core I/O designs, and the implications on ESD and latchup guard ring integration for both a ‘bottom-up' and ‘top-down' methodology addressing I/O guard rings, ESD guard rings, I/O to I/O, and I/O to core classification of ESD power clamps and ESD signal pin circuitry, and how to make the correct choice for a given semiconductor chip examples of ESD design for the state-of-the-art technologies discussed, including CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, and smart power practical methods for the understanding of ESD circuit power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics ESD: Design and Synthesis is a continuation of the author's series of books on ESD protection. It is an essential reference for: ESD, circuit, and semiconductor engineers; design synthesis team leaders; layout design, characterisation, floorplanning, test and reliability engineers; technicians; and groundrule and test site developers in the manufacturing and design of semiconductor chips. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, and manufacturing sciences, and on courses involving the design of ESD devices, chips and systems. This book offers a useful insight into the issues that confront modern technology as we enter the nano-electronic era.
| Author | : Steven H. Voldman |
| Publisher | : John Wiley & Sons |
| Total Pages | : 244 |
| Release | : 2012-08-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1118443268 |
Electrostatic discharge (ESD) continues to impact semiconductor manufacturing, semiconductor components and systems, as technologies scale from micro- to nano electronics. This book introduces the fundamentals of ESD, electrical overstress (EOS), electromagnetic interference (EMI), electromagnetic compatibility (EMC), and latchup, as well as provides a coherent overview of the semiconductor manufacturing environment and the final system assembly. It provides an illuminating look into the integration of ESD protection networks followed by examples in specific technologies, circuits, and chips. The text is unique in covering semiconductor chip manufacturing issues, ESD semiconductor chip design, and system problems confronted today as well as the future of ESD phenomena and nano-technology. Look inside for extensive coverage on: The fundamentals of electrostatics, triboelectric charging, and how they relate to present day manufacturing environments of micro-electronics to nano-technology Semiconductor manufacturing handling and auditing processing to avoid ESD failures ESD, EOS, EMI, EMC, and latchup semiconductor component and system level testing to demonstrate product resilience from human body model (HBM), transmission line pulse (TLP), charged device model (CDM), human metal model (HMM), cable discharge events (CDE), to system level IEC 61000-4-2 tests ESD on-chip design and process manufacturing practices and solutions to improve ESD semiconductor chip solutions, also practical off-chip ESD protection and system level solutions to provide more robust systems System level concerns in servers, laptops, disk drives, cell phones, digital cameras, hand held devices, automobiles, and space applications Examples of ESD design for state-of-the-art technologies, including CMOS, BiCMOS, SOI, bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, magnetic recording technology, micro-machines (MEMs) to nano-structures ESD Basics: From Semiconductor Manufacturing to Product Use complements the author’s series of books on ESD protection. For those new to the field, it is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic Era.
| Author | : Raoul Velazco |
| Publisher | : Springer |
| Total Pages | : 402 |
| Release | : 2019-04-10 |
| Genre | : Technology & Engineering |
| ISBN | : 3030046605 |
This book provides readers with invaluable overviews and updates of the most important topics in the radiation-effects field, enabling them to face significant challenges in the quest for the insertion of ever-higher density and higher performance electronic components in satellite systems. Readers will benefit from the up-to-date coverage of the various primary (classical) sub-areas of radiation effects, including the space and terrestrial radiation environments, basic mechanisms of total ionizing dose, digital and analog single-event transients, basic mechanisms of single-event effects, system-level SEE analysis, device-level, circuit-level and system-level hardening approaches, and radiation hardness assurance. Additionally, this book includes in-depth discussions of several newer areas of investigation, and current challenges to the radiation effects community, such as radiation hardening by design, the use of Commercial-Off-The-Shelf (COTS) components in space missions, CubeSats and SmallSats, the use of recent generation FPGA’s in space, and new approaches for radiation testing and validation. The authors provide essential background and fundamentals, in addition to information on the most recent advances and challenges in the sub-areas of radiation effects. Provides a concise introduction to the fundamentals of radiation effects, latest research results, and new test methods and procedures; Discusses the radiation effects and mitigation solutions for advanced integrated circuits and systems designed to operate in harsh radiation environments; Includes coverage of the impact of Small Satellites in the space industry.
| Author | : Juin J. Liou |
| Publisher | : CRC Press |
| Total Pages | : 378 |
| Release | : 2017-12-19 |
| Genre | : Technology & Engineering |
| ISBN | : 1351830988 |
Electrostatic discharge (ESD) is one of the most prevalent threats to electronic components. In an ESD event, a finite amount of charge is transferred from one object (i.e., human body) to another (i.e., microchip). This process can result in a very high current passing through the microchip within a very short period of time. Thus, more than 35 percent of single-event chip damages can be attributed to ESD events, and designing ESD structures to protect integrated circuits against the ESD stresses is a high priority in the semiconductor industry. Electrostatic Discharge Protection: Advances and Applications delivers timely coverage of component- and system-level ESD protection for semiconductor devices and integrated circuits. Bringing together contributions from internationally respected researchers and engineers with expertise in ESD design, optimization, modeling, simulation, and characterization, this book bridges the gap between theory and practice to offer valuable insight into the state of the art of ESD protection. Amply illustrated with tables, figures, and case studies, the text: Instills a deeper understanding of ESD events and ESD protection design principles Examines vital processes including Si CMOS, Si BCD, Si SOI, and GaN technologies Addresses important aspects pertinent to the modeling and simulation of ESD protection solutions Electrostatic Discharge Protection: Advances and Applications provides a single source for cutting-edge information vital to the research and development of effective, robust ESD protection solutions for semiconductor devices and integrated circuits.
| Author | : Steven H. Voldman |
| Publisher | : John Wiley & Sons |
| Total Pages | : 368 |
| Release | : 2013-08-27 |
| Genre | : Technology & Engineering |
| ISBN | : 1118703332 |
Electrical Overstress (EOS) continues to impact semiconductor manufacturing, semiconductor components and systems as technologies scale from micro- to nano-electronics. This bookteaches the fundamentals of electrical overstress and how to minimize and mitigate EOS failures. The text provides a clear picture of EOS phenomena, EOS origins, EOS sources, EOS physics, EOS failure mechanisms, and EOS on-chip and system design. It provides an illuminating insight into the sources of EOS in manufacturing, integration of on-chip, and system level EOS protection networks, followed by examples in specific technologies, circuits, and chips. The book is unique in covering the EOS manufacturing issues from on-chip design and electronic design automation to factory-level EOS program management in today’s modern world. Look inside for extensive coverage on: Fundamentals of electrical overstress, from EOS physics, EOS time scales, safe operating area (SOA), to physical models for EOS phenomena EOS sources in today’s semiconductor manufacturing environment, and EOS program management, handling and EOS auditing processing to avoid EOS failures EOS failures in both semiconductor devices, circuits and system Discussion of how to distinguish between EOS events, and electrostatic discharge (ESD) events (e.g. such as human body model (HBM), charged device model (CDM), cable discharge events (CDM), charged board events (CBE), to system level IEC 61000-4-2 test events) EOS protection on-chip design practices and how they differ from ESD protection networks and solutions Discussion of EOS system level concerns in printed circuit boards (PCB), and manufacturing equipment Examples of EOS issues in state-of-the-art digital, analog and power technologies including CMOS, LDMOS, and BCD EOS design rule checking (DRC), LVS, and ERC electronic design automation (EDA) and how it is distinct from ESD EDA systems EOS testing and qualification techniques, and Practical off-chip ESD protection and system level solutions to provide more robust systems Electrical Overstress (EOS): Devices, Circuits and Systems is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the nano-electronic era.
| Author | : Vladislav Vashchenko |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 331 |
| Release | : 2014-03-21 |
| Genre | : Technology & Engineering |
| ISBN | : 3319032216 |
This book addresses key aspects of analog integrated circuits and systems design related to system level electrostatic discharge (ESD) protection. It is an invaluable reference for anyone developing systems-on-chip (SoC) and systems-on-package (SoP), integrated with system-level ESD protection. The book focuses on both the design of semiconductor integrated circuit (IC) components with embedded, on-chip system level protection and IC-system co-design. The readers will be enabled to bring the system level ESD protection solutions to the level of integrated circuits, thereby reducing or completely eliminating the need for additional, discrete components on the printed circuit board (PCB) and meeting system-level ESD requirements. The authors take a systematic approach, based on IC-system ESD protection co-design. A detailed description of the available IC-level ESD testing methods is provided, together with a discussion of the correlation between IC-level and system-level ESD testing methods. The IC-level ESD protection design is demonstrated with representative case studies which are analyzed with various numerical simulations and ESD testing. The overall methodology for IC-system ESD co-design is presented as a step-by-step procedure that involves both ESD testing and numerical simulations.
| Author | : Donald B. Estreich |
| Publisher | : |
| Total Pages | : 344 |
| Release | : 1980 |
| Genre | : Integrated circuits |
| ISBN | : |
| Author | : Norman Einspruch |
| Publisher | : Elsevier |
| Total Pages | : 383 |
| Release | : 2012-12-02 |
| Genre | : Technology & Engineering |
| ISBN | : 0323153135 |
VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.
