Transferred Electron Devices
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| Author | : SITESH KUMAR ROY |
| Publisher | : PHI Learning Pvt. Ltd. |
| Total Pages | : 214 |
| Release | : 2003-01-01 |
| Genre | : Technology & Engineering |
| ISBN | : 9788120324183 |
The main objective of this comprehensive text is to introduce the students the physics and the operational principles as well as the characteristics, and applications of the microwave semiconductor devices. These devices are making a revolutionary change in the field of communication and radars. As a result of the accelerating rate of growth of microwave technology in research and industry, students, engineers and scientists need to understand the theoretical and experimental design and analysis of these devices. The book also deals with higher frequency microwaves called millimeter waves, which are finding wide applications in ground and satellite communication, radars and missile guidance. Millimeter wave system development is one of the most advanced technologies in radio science, especially in view of the ever increasing demand of communication and saturation of microwave frequency range with increasing number of channels. The book discusses in greater detail about the semiconductor devices such as IMPATT diodes, Gunn diodes, HEMT diodes and FET diodes. It emphasizes on various two and three terminal devices in the microwave and millimeter wave field based on silicon and Groups III-V compound semiconductors. The book is intended to serve as a textbook for undergraduate electronics and electrical engineering students and postgraduate students of physics. It would also be a valuable reference book for professional engineers and physicists.
| Author | : Simon M. Sze |
| Publisher | : John Wiley & Sons |
| Total Pages | : 828 |
| Release | : 2006-12-13 |
| Genre | : Technology & Engineering |
| ISBN | : 0470068302 |
The Third Edition of the standard textbook and reference in the field of semiconductor devices This classic book has set the standard for advanced study and reference in the semiconductor device field. Now completely updated and reorganized to reflect the tremendous advances in device concepts and performance, this Third Edition remains the most detailed and exhaustive single source of information on the most important semiconductor devices. It gives readers immediate access to detailed descriptions of the underlying physics and performance characteristics of all major bipolar, field-effect, microwave, photonic, and sensor devices. Designed for graduate textbook adoptions and reference needs, this new edition includes: A complete update of the latest developments New devices such as three-dimensional MOSFETs, MODFETs, resonant-tunneling diodes, semiconductor sensors, quantum-cascade lasers, single-electron transistors, real-space transfer devices, and more Materials completely reorganized Problem sets at the end of each chapter All figures reproduced at the highest quality Physics of Semiconductor Devices, Third Edition offers engineers, research scientists, faculty, and students a practical basis for understanding the most important devices in use today and for evaluating future device performance and limitations. A Solutions Manual is available from the editorial department.
| Author | : P. J. Bulman |
| Publisher | : |
| Total Pages | : 402 |
| Release | : 1972-01-01 |
| Genre | : Electronic equipment: Gunn effect diodes |
| ISBN | : 9780121408503 |
| Author | : Sigfrid Yngvesson |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 481 |
| Release | : 2012-12-06 |
| Genre | : Technology & Engineering |
| ISBN | : 1461539706 |
We have reached the double conclusion: that invention is choice, that this choice is imperatively governed by the sense of scientific beauty. Hadamard (1945), Princeton University Press, by permission. The great majority of all sources and amplifiers of microwave energy, and all devices for receiving or detecting microwaves, use a semiconductor active element. The development of microwave semiconductor devices, de scribed in this book, has proceeded from the simpler, two-terminal, devices such as GUNN or IMPATT devices, which originated in the 1960s, to the sophisticated monolithic circuit MESFET three-terminal active elements, of the 1980s and 1990s. The microwave field has experienced a renais sance in electrical engineering departments in the last few years, and much of this growth has been associated with microwave semiconductor devices. The University of Massachusetts has recently developed a well recognized program in microwave engineering. Much of the momentum for this pro gram has been provided by interaction with industrial companies, and the influx of a large number of industry-supported students. This program had a need for a course in microwave semiconductor devices, which covered the physical aspects, as well as the aspects of interest to the engineer who incorporates such devices in his designs. It was also felt that it would be im portant to introduce the most recently developed devices (HFETs, HBTs, and other advanced devices) as early as possible.
| Author | : Michael S. Shur |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 677 |
| Release | : 2013-11-21 |
| Genre | : Technology & Engineering |
| ISBN | : 1489919899 |
GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.
| Author | : Harold L. Grubin |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 474 |
| Release | : 2013-11-11 |
| Genre | : Science |
| ISBN | : 1489923446 |
The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
| Author | : |
| Publisher | : |
| Total Pages | : 2684 |
| Release | : 1976 |
| Genre | : Patents |
| ISBN | : |
| Author | : Norman G. Einspruch |
| Publisher | : Academic Press |
| Total Pages | : 351 |
| Release | : 2014-12-01 |
| Genre | : Technology & Engineering |
| ISBN | : 1483217698 |
| Author | : Bozzano G Luisa |
| Publisher | : Academic Press |
| Total Pages | : 423 |
| Release | : 2013-10-22 |
| Genre | : Technology & Engineering |
| ISBN | : 1483288692 |
Practical Microwave Electron Devices provides an understanding of microwave electron devices and their applications. All areas of microwave electron devices are covered. These include microwave solid-state devices, including popular microwave transistors and both passive and active diodes; quantum electron devices; thermionic devices (including relativistic thermionic devices); and ferrimagnetic electron devices. The design of each of these devices is discussed as well as their applications, including oscillation, amplification, switching, modulation, demodulation, and parametric interactions. Numerous design examples and case studies are presented throughout the book. For each microwave electron device covered, typical design examples or case studies are presented as well as qualitative or quantitative explanations. The fundamental theory of each device is summarized along with the underlying principles of the design. Each summary is presented so that the design techniques can be applied to other specific cases, designs, and applications. Review questions are included with each chapter to stimulate creative thinking and enhance the acquisition of knowledge and design skills. This book is written for engineers, scientists, and technicians seeking practical knowledge on microwave electron devices and their applications through self-study. It is also suitable for use as a college textbook in upper-division courses for seniors and first-year graduate students in electrical engineering.
| Author | : G.W. Cullen |
| Publisher | : Springer Science & Business Media |
| Total Pages | : 306 |
| Release | : 2013-11-11 |
| Genre | : Technology & Engineering |
| ISBN | : 1461262674 |
Some years ago it was not uncommon for materials scientists, even within the electronics industry, to work relatively independently of device engi neers. Neither group had a means to determine whether or not the materials had been optimized for application in specific device structures. This mode of operation is no longer desirable or possible. The introduction of a new material, or a new form of a well known material, now requires a close collaborative effort between individuals who represent the disciplines of materials preparation, materials characterization, device design and pro cessing, and the analysis of the device operation to establish relationships between device performance and the materials properties. The develop ment of devices in heteroepitaxial thin films has advanced to the present state specifically through the unusually close and active interchange among individuals with the appropriate backgrounds. We find no book available which brings together a description of these diverse disciplines needed for the development of such a materials-device technology. Therefore, the authors of this book, who have worked in close collaboration for a number of years, were motivated to collect their experiences in this volume. Over the years there has been a logical flow of activity beginning with heteroepi taxial silicon and progressing through the III-V and II-VI compounds. For each material the early emphasis on material preparation and characteriza tion later shifted to an emphasis on the analysis of the device characteristics specific to the materials involved.
