Third Conference On Crystal Growth
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Author | : Georg Müller |
Publisher | : Springer Science & Business Media |
Total Pages | : 145 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 3642732089 |
1 The content ofthis article is based on a German book version ) which appeared at the end of the year 1986. The author tried to incorporate - as far as possible - new important results published in the last year. But the literature in the field of "convection and inhomogeneities in crystal growth from the melt" has increased so much in the meantime that the reader and the collegues should make allowance for any incompleteness, also in the case that their important contributions have not been cited. This could for example hold for problems related to the Czochralski growth. But especially for this topic the reader may be refered to the forthcoming volume of this series, which contains special contributions on "Surface Tension Driven Flow in Crystal Growth Melts" by D. Schwabe and on "Convection in Czochralski Melts" by M. Mihelcic, W. Uelhoff, H. Wenzl and K. Wingerath. The preparation of this manuscript has been supported by several women whose help is gratefully acknowledged by the autor: Mrs. Gisela Neuner for the type writing, Mrs. Abigail Sanders, Mrs. Fiona Eels and especially Prof. Nancy Haegel for their help in questions of the English language and Mrs. Christa Weber for reading corrections. Also the good cooperation with the Springer Verlag, especially Mrs. Bohlen and with the managing editor of Crystals, Prof. H. C. Freyhardt, who critically read the manuscript, is acknowledged.
Author | : Library of Congress. Copyright Office |
Publisher | : Copyright Office, Library of Congress |
Total Pages | : 1474 |
Release | : 1970 |
Genre | : Copyright |
ISBN | : |
Author | : |
Publisher | : |
Total Pages | : 1082 |
Release | : 1974 |
Genre | : Nuclear energy |
ISBN | : |
Author | : Dirk Ehrentraut |
Publisher | : Springer Science & Business Media |
Total Pages | : 337 |
Release | : 2010-06-14 |
Genre | : Science |
ISBN | : 3642048307 |
This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.
Author | : |
Publisher | : |
Total Pages | : 1040 |
Release | : 1989 |
Genre | : Armed Forces |
ISBN | : |
Author | : H. Arend |
Publisher | : Springer Science & Business Media |
Total Pages | : 425 |
Release | : 2012-12-06 |
Genre | : Science |
ISBN | : 1461305497 |
Science and art of crystal growth represent an interdisciplinary activity based on fundamental principles of physics, chemistry and crystallography. Crystal growth has contributed over the years essentially to a widening of knowledge in its basic disciplines and has penetrated practically into all fields of experimental natural sciences. It has acted, more over, in a steadily increasing manner as a link between science and technology as can be seen best, for example, from the achievements in modern microelectronics. The aim of the course "Crystal Growth in Science and Technology" being to stress the interdisciplinary character of the subject, selected fundamental principles are reviewed in the following contributions and cross links between basic and applied aspects are illustrated. It is a very well-known fact that the intensive development of crystal growth has led to a progressive narrowing of interests in highly specialized directions which is in particular harmful to young research scientists. The organizers of the course did sincerely hope that the program would help to broaden up the horizon of the participants. It was equally their wish to contribute within the traditional spirit of the school of crystallography in Erice to the promotion of mutual understanding, personal friendship and future collaboration between all those who were present at the school.
Author | : Brian R. Pamplin |
Publisher | : Elsevier |
Total Pages | : 630 |
Release | : 2013-09-11 |
Genre | : Science |
ISBN | : 1483161463 |
Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.
Author | : Robert Feigelson |
Publisher | : Elsevier |
Total Pages | : 269 |
Release | : 2004-07-09 |
Genre | : Science |
ISBN | : 0080489931 |
There is no question that the field of solid state electronics, which essentially began with work at Bell laboratories just after World War II, has had a profound impact on today's Society. What is not nearly so widely known is that advances in the art and science of crystal growth underpin this technology. Single crystals, once valued only for their beauty, are now found, in one form or another in most electronic, optoelectronic and numerous optical devices. These devices, in turn, have permeated almost every home and village throughout the world. In fact it is hard to imagine what our electronics industry, much less our entire civilization, would have been like if crystal growth scientists and engineers were unable to produce the large, defect free crystals required by device designers. This book brings together two sets of related articles describing advances made in crystal growth science and technology since World War II. One set is from the proceedings of a Symposium held in August 2002 to celebrate 50 years of progress in the field of crystal growth. The second contains articles previously published in the newsletter of the American Association for Crystal Growth in a series called "Milestones in Crystal Growth".The first section of this book contains several articles which describe some of the early history of crystal growth prior to the electronics revolution, and upon which modern crystal growth science and technology is based. This is followed by a special article by Prof. Sunagawa which provides some insight into how the successful Japanese crystal growth industry developed. The next section deals with crystal growth fundamentals including concepts of solute distribution, interface kinetics, constitutional supercooling, morphological stability and the growth of dendrites. The following section describes the growth of crystals from melts and solutions, while the final part involves thin film growth by MBE and OMVPE.These articles were written by some of the most famous theorists and crystal growers working in the field. They will provide future research workers with valuable insight into how these pioneering discoveries were made, and show how their own research and future devices will be based upon these developments.·Articles written by some of the most famous theorists and crystal growers working in the field·Valuable insight into how pioneering discoveries were made.·Show how their own research and future devices will be based upon these developments
Author | : Hans J. Scheel |
Publisher | : John Wiley & Sons |
Total Pages | : 695 |
Release | : 2009-07-31 |
Genre | : Science |
ISBN | : 0470491108 |
This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
Author | : G.W. Cullen |
Publisher | : Elsevier |
Total Pages | : 409 |
Release | : 2013-09-03 |
Genre | : Science |
ISBN | : 1483223574 |
Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.